To read the full version of this content please select one of the options below:

ALGORITHM FOR MODELLING GENERALLY DESCRIBED SEMICONDUCTORS

Sasa Sokolić (Faculty of Electrical and Computer Engineering, Trzaska 25, Ljubljana, Yugoslavia)
Slavko Amon (Faculty of Electrical and Computer Engineering, Trzaska 25, Ljubljana, Yugoslavia)
Franc Smole (Faculty of Electrical and Computer Engineering, Trzaska 25, Ljubljana, Yugoslavia)
Dejan Krizaj (Faculty of Electrical and Computer Engineering, Trzaska 25, Ljubljana, Yugoslavia)

Abstract

A general algorithm for analysis of semiconductors with arbitrary models for heavy doping phenomena is presented. Different models, theoretical as well as empirical, were applied, and minority carrier concentration in the uncompensated n‐type silicon was analyzed. Recalculated into the term of apparent BGN, the results were compared with experimental data. Further analysis of apparent BGN indicated the weakness of empirical formulae for apparent BGN. Assumption of total ionization of impurities considered in the analysis is discussed and justified.

Citation

Sokolić, S., Amon, S., Smole, F. and Krizaj, D. (1991), "ALGORITHM FOR MODELLING GENERALLY DESCRIBED SEMICONDUCTORS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 449-463. https://doi.org/10.1108/eb051720

Publisher

:

MCB UP Ltd

Copyright © 1991, MCB UP Limited