Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques (Douglas‐Rachford with local time steps) for the solution is presented in this paper. The formulation with electrostatic potential φ and quasi‐Fermi levels φn,φp is used.
Hecht, F., Marrocco, A., Caquot, E. and Filoche, M. (1991), "SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 425-438. https://doi.org/10.1108/eb051718
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