SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS

F. Hecht (INRIA Domaine de Voluceau ‐ Rocquencourt BP 105 78153 LE CHESNAY FRANCE)
A. Marrocco (INRIA Domaine de Voluceau ‐ Rocquencourt BP 105 78153 LE CHESNAY FRANCE)
E. Caquot (CNET 196 avenue H.Ravera 92220 BAGNEUX FRANCE)
M. Filoche (CNET 196 avenue H.Ravera 92220 BAGNEUX FRANCE)

Abstract

Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques (Douglas‐Rachford with local time steps) for the solution is presented in this paper. The formulation with electrostatic potential φ and quasi‐Fermi levels φn,φp is used.

Citation

Hecht, F., Marrocco, A., Caquot, E. and Filoche, M. (1991), "SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 425-438. https://doi.org/10.1108/eb051718

Publisher

:

MCB UP Ltd

Copyright © 1991, MCB UP Limited

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