A new model to describe dopant diffusion and recrystallisation in polycrystalline silicon during thermal treatment is presented. The full 3D microstructure of the material is considered and a local homogenisation approximation introduced. A parallel diffusion model for diffusion in grain boundaries and grain interior with grain growth and segregation is developed within this approximation. The model is solved in a 2D vertical section using a finite element discretisation. An example of the application of this model to a one micron bipolar transistor is given.
Jones, S. and Gérodolle, A. (1991), "2D PROCESS SIMULATION OF DOPANT DIFFUSION IN POLYSILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 401-410. https://doi.org/10.1108/eb051716Download as .RIS
MCB UP Ltd
Copyright © 1991, MCB UP Limited