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BULK IMAGE EFFECTS OF PHOTORESIST IN THREE‐DIMENSIONAL PROFILE SIMULATION

Tatsumi ISHIZUKA (Fuji Research Institute Corporation 3‐2‐12, Kaigan, Minato‐ku, Tokyo 108, JAPAN)

Abstract

3D bulk image effects in high‐NA lens lithography are studied through 3D exposure and development simulations by applying a Mack model to the 3D exposure process.

Citation

ISHIZUKA, T. (1991), "BULK IMAGE EFFECTS OF PHOTORESIST IN THREE‐DIMENSIONAL PROFILE SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 389-400. https://doi.org/10.1108/eb051715

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited