3D bulk image effects in high‐NA lens lithography are studied through 3D exposure and development simulations by applying a Mack model to the 3D exposure process.
ISHIZUKA, T. (1991), "BULK IMAGE EFFECTS OF PHOTORESIST IN THREE‐DIMENSIONAL PROFILE SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 389-400. https://doi.org/10.1108/eb051715
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