The benefits of the thin film multichip module (MCM‐D) approach to high density packaging for VLSI devices have now been amply demonstrated by a number of research groups. The successful emergence of a viable multichip module industry from this research base will, however, depend upon the installation of an industry‐wide manufacturing infrastructure. This will have to provide the necessary range of concurrent design capabilities, make pretested bare die available, and include multichip module vendors who can offer an integrated capability in module design, substrate layout and manufacture, advanced module assembly, packaging and test. Each of these areas of MCM‐D technology merits detailed attention in its own right, sufficient to justify many individual papers and presentations. This present paper focuses on just one of these topics and addresses the approach taken by GEC Plessey Semiconductors (GPS) to the development and control of a highly manufacturable MCM‐D silicon substrate process. The GPS ‘Process I’ four‐layer metal, aluminium‐polyimide substrate technology is described, the technology development and process control test structures are detailed and process characterisation data presented.
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