Creating Mechanical Stress in the Resistive Layer as a Method of Studying its Temperature Characteristics

Abstract

The separation of thick‐film resistor temperature characteristics into two components is presented. One of the components is a function of the resistive material, the other a function of the linear expansion coefficient mismatch between the substrate and the resistive layer. The analysis has been carried out by two methods: by taking the temperature characteristics of the resistive material in the form of pearls, and by generating compressive stress in the resistive layer corresponding to the stress created by the temperature rise.

Citation

Szymański, D., Achmatowicz, S., Bekisz, J. and Szczytko, B. (1985), "Creating Mechanical Stress in the Resistive Layer as a Method of Studying its Temperature Characteristics", Microelectronics International, Vol. 2 No. 2, pp. 56-59. https://doi.org/10.1108/eb044176