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ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

Enrique THOMANN (Department of Mathematics, Oregon State University, Corvallis, OR 97331, USA)
F. ODEH (IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, USA)
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Abstract

Some results concerning the well‐posedness of the hydrodynamic model of semiconductor devices in two dimensions are given. We show the non‐ellipticity of the stationary model; give representations which exhibit its elliptic and hyperbolic components, and obtain some appropriate boundary conditions from an examination of the time‐dependent problem.

Citation

THOMANN, E. and ODEH, F. (1990), "ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 9 No. 1, pp. 45-57. https://doi.org/10.1108/eb010325

Publisher

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MCB UP Ltd

Copyright © 1990, MCB UP Limited

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