A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON
ISSN: 0332-1649
Article publication date: 1 January 1987
Abstract
The simulation of coupled dopant diffusion in silicon is becoming increasingly important in integrated circuit technology, as device dimensions are reduced and efforts are made to reduce process complexity. Thus a need exists for accurate simulation over a wide range of diffusion conditions, based on necessity on well tested, predictive physical models.
Citation
COWERN, N.E.B. and GODFREY, D.J. (1987), "A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 1, pp. 59-63. https://doi.org/10.1108/eb010302
Publisher
:MCB UP Ltd
Copyright © 1987, MCB UP Limited