DIFFUSION‐DRIFT MODELING OF STRONG INVERSION LAYERS

Abstract

By generalizing the equation of state of the conduction electron gas in a semiconductor to include a dependence not only on electron density but also on the density gradient we show that the standard diffusion‐drift description can be extended to describe much of the quantum mechanical behavior exhibited by strong inversion layers.

Citation

ANCONA, M.G. (1987), "DIFFUSION‐DRIFT MODELING OF STRONG INVERSION LAYERS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 1, pp. 11-18. https://doi.org/10.1108/eb010295