Time and frequency domain complementary numerical models of microwave non‐linear circuits using two‐terminal active semiconductor devices are presented. Their main feature is the use of numerical one‐dimensional macroscopic physical models as semiconductor device models. Their respective capability is illustrated by some results of a study devoted to the optimization of millimeter‐wave avalanche diode frequency multipliers.
DALLE, C., FRISCOURT, M.R. and ROLLAND, P.A. (1992), "TIME AND FREQUENCY DOMAIN NUMERICAL PHYSICAL MODELLING OF TWO TERMINAL MICROWAVE NON LINEAR CIRCUITS APPLIED TO MILLIMETER‐WAVE AVALANCHE DIODE FREQUENCY MULTIPLIERS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 525-536. https://doi.org/10.1108/eb010113
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