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TIME AND FREQUENCY DOMAIN NUMERICAL PHYSICAL MODELLING OF TWO TERMINAL MICROWAVE NON LINEAR CIRCUITS APPLIED TO MILLIMETER‐WAVE AVALANCHE DIODE FREQUENCY MULTIPLIERS

C. DALLE (IEMN, UMR CNRS 9929, Département Hyperfréquences et Semiconducteurs, Bât. P3, Université des Sciences et Technologies, 59655 Villeneuve d'Ascq Cedex,‐FRANCE)
M.R. FRISCOURT (IEMN, UMR CNRS 9929, Département Hyperfréquences et Semiconducteurs, Bât. P3, Université des Sciences et Technologies, 59655 Villeneuve d'Ascq Cedex,‐FRANCE)
P.A. ROLLAND (IEMN, UMR CNRS 9929, Département Hyperfréquences et Semiconducteurs, Bât. P3, Université des Sciences et Technologies, 59655 Villeneuve d'Ascq Cedex,‐FRANCE)

Abstract

Time and frequency domain complementary numerical models of microwave non‐linear circuits using two‐terminal active semiconductor devices are presented. Their main feature is the use of numerical one‐dimensional macroscopic physical models as semiconductor device models. Their respective capability is illustrated by some results of a study devoted to the optimization of millimeter‐wave avalanche diode frequency multipliers.

Citation

DALLE, C., FRISCOURT, M.R. and ROLLAND, P.A. (1992), "TIME AND FREQUENCY DOMAIN NUMERICAL PHYSICAL MODELLING OF TWO TERMINAL MICROWAVE NON LINEAR CIRCUITS APPLIED TO MILLIMETER‐WAVE AVALANCHE DIODE FREQUENCY MULTIPLIERS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 525-536. https://doi.org/10.1108/eb010113

Publisher

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MCB UP Ltd

Copyright © 1992, MCB UP Limited