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ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE‐CRYSTAL SILICON

Al F. Tasch (Microelectronics Research Center / University of Texas, Austin Department of Electrical & Computer Engineering ENS 433 Austin, Texas 78712 USA)

Abstract

This paper describes a modeling strategy and the model development for predicting ion implanted impurity distributions in single‐crystal silicon. Both a computationally efficient semi‐empirical model and a physically‐based, more computationally intense Monte Carlo model have been developed for boron distributions in silicon. The resulting models account very well for the detailed profile dependence on implant dose, tilt angle, and rotation angle in addition to energy.

Citation

Tasch, A.F. (1992), "ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE‐CRYSTAL SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 391-402. https://doi.org/10.1108/eb010100

Publisher

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MCB UP Ltd

Copyright © 1992, MCB UP Limited