This paper describes a modeling strategy and the model development for predicting ion implanted impurity distributions in single‐crystal silicon. Both a computationally efficient semi‐empirical model and a physically‐based, more computationally intense Monte Carlo model have been developed for boron distributions in silicon. The resulting models account very well for the detailed profile dependence on implant dose, tilt angle, and rotation angle in addition to energy.
Tasch, A.F. (1992), "ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE‐CRYSTAL SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 391-402. https://doi.org/10.1108/eb010100
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