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TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

E.D. LYUMKIS (Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia)
B.S. POLSKY (Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia)
A.I. SHUR (Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia)
P. VISOCKY (Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia)

Abstract

An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.

Citation

LYUMKIS, E.D., POLSKY, B.S., SHUR, A.I. and VISOCKY, P. (1992), "TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 2, pp. 311-325. https://doi.org/10.1108/eb010094

Publisher

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MCB UP Ltd

Copyright © 1992, MCB UP Limited