An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.
LYUMKIS, E.D., POLSKY, B.S., SHUR, A.I. and VISOCKY, P. (1992), "TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 2, pp. 311-325. https://doi.org/10.1108/eb010094Download as .RIS
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