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ON REGIONAL OPTIMISATION OF GRID AND RELAXATION PARAMETER FOR FINITE DIFFERENCE SOLUTION OF POISSONS' EQUATION IN REVERSE BIASED PLANAR TYPE p‐n JUNCTIONS

J. AKHTAR (Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani (Rajasthan) 333031 India)
S. AHMAD (Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani (Rajasthan) 333031 India)

Abstract

The optimisation of grid structure and relaxation parameter is considered in this paper in connection with two‐dimensional finite difference solution of Poisson's equation for determining the field profile in a reverse biased planar type p?n junction. By dividing the planar junction into regions with rectangular and circular symmetry, regional optimisations have been carried out using small area test sites. Having obtained the optimal grid size and relaxation parameter for each region, the complete solution was obtained easily with very fast convergence. The method involved in this kind of regional optimisation is presented in detail with discussions on its comparative usefulness with other known techniques.

Citation

AKHTAR, J. and AHMAD, S. (1989), "ON REGIONAL OPTIMISATION OF GRID AND RELAXATION PARAMETER FOR FINITE DIFFERENCE SOLUTION OF POISSONS' EQUATION IN REVERSE BIASED PLANAR TYPE p‐n JUNCTIONS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 8 No. 4, pp. 185-197. https://doi.org/10.1108/eb010059

Publisher

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MCB UP Ltd

Copyright © 1989, MCB UP Limited

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