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Basic models in dielectric spectroscopy of heterogeneous materials with semiconductor inclusions

A.S. Tonkoshkur (Department of Physics, Electronics and Computer Systems, Oles Honchar Dnipro National University, Dnipro, Ukraine)
A.B. Glot (Universidad Tecnologica de la Mixteca, Huajuapan de Leon, Mexico)
A.V. Ivanchenko (Department of Physics, Electronics and Computer Systems, Oles Honchar Dnipro National University, Dnipro, Ukraine)

Multidiscipline Modeling in Materials and Structures

ISSN: 1573-6105

Publication date: 12 June 2017

Abstract

Purpose

The purpose of this paper is to develop the models of the dielectric permittivity dispersion of heterogeneous systems based on semiconductors to a level that would allow to apply effectively the method of broadband dielectric spectroscopy for the study of electronic processes in ceramic and composite materials.

Design/methodology/approach

The new approach for determining the complex dielectric permittivity of heterogeneous systems with semiconductor particles is used. It includes finding the analytical expression of the effective dielectric permittivity of the separate semiconductor particle of spherical shape. This approach takes into account the polarization of the free charge carriers in this particle, including capturing to localized electron states. This enabled the authors to use the known equations for complex dielectric permittivity of two-component matrix systems and statistical mixtures.

Findings

The presented dispersion equations establish the relationship between the parameters of the dielectric spectrum and electronic processes in the structures like semiconductor particles in a dielectric matrix in a wide frequency range. Conditions of manifestation and location of the different dispersion regions of the complex dielectric heterogeneous systems based on semiconductors in the frequency axis and their features are established. The most high-frequency dispersion region corresponds to the separation of free charge carriers at polarization. After this region in the direction of reducing of the frequency, the dispersion regions caused by recharge bulk and/or surface localized states follow. The most low-frequency dispersion region is caused by recharging electron traps in the boundary layer of the dielectric matrix.

Originality/value

Dielectric dispersion models are developed that are associated with: electronic processes of separation of free charge carriers in the semiconductor component, recapture of free charge carriers in the localized electronic states in bulk and on the surface of the semiconductor and also boundary layers of the dielectric at the polarization. The authors have analyzed to situations that correspond applicable and promising materials: varistor ceramics and composite structure with conductive and semiconductor fillers. The modelling results correspond to the existing level of understanding of the electron phenomena in matrix systems and statistical mixtures based on semiconductors. It allows to raise efficiency of research and control properties of heterogeneous materials by dielectric spectroscopy.

Keywords

Citation

Tonkoshkur, A.S., Glot, A.B. and Ivanchenko, A.V. (2017), "Basic models in dielectric spectroscopy of heterogeneous materials with semiconductor inclusions", Multidiscipline Modeling in Materials and Structures, Vol. 13 No. 1, pp. 36-57. https://doi.org/10.1108/MMMS-08-2016-0037

Publisher

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Emerald Publishing Limited

Copyright © 2017, Emerald Publishing Limited