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Effect of wire diameter and hook location on second bond failure modes

Fuaida Harun (Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Malaysia)
Roslina Ismail (Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Malaysia)
Azman Jalar (Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Malaysia)
Shahrum Abdullah (Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Malaysia)

Microelectronics International

ISSN: 1356-5362

Article publication date: 5 January 2015

Abstract

Purpose

This paper aims to analyze the effect of Au wire size and location of hook during wire pulling test to identify the variation of results obtained.

Design/methodology/approach

Two hook locations, namely, location A and location B were used to analyze the effect of hook location. Location A was the same as the hook location required by MIL-STD-883E standard, whereas location B was located near to the second bond. The correlation between new purposed failure modes and MIL-STD-883E standard was developed to reflect on the pull strength with the physical failure.

Findings

It was observed that fine pitch Au wire has higher variation and lower process capability of pull strength. Au wire pulled by the hook at location B provides a more representative result compared to that at location A. Fifty per cent or more of Au remnant is required to be considered as a good and reliable Au wedge bond based on the new purposed failure modes.

Originality/value

The evaluation of gold (Au) wedge bond requires a new proper wire pulling test method. This is due to the large variation obtained from the application of current practice of wire pulling test.

Keywords

Acknowledgements

The authors would like to thank all colleagues at lnfineon, Malacca and Malaysia for their support.

Citation

Harun, F., Ismail, R., Jalar, A. and Abdullah, S. (2015), "Effect of wire diameter and hook location on second bond failure modes", Microelectronics International, Vol. 32 No. 1, pp. 32-36. https://doi.org/10.1108/MI-03-2014-0011

Publisher

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Emerald Group Publishing Limited

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