VDMOSFET reliability dependence on the integrated drain‐source junction
Abstract
Purpose
This work aims to investigate the modifications in a transistor behavior after hot carrier injection processes from the integrated junction.
Design/methodology/approach
A high voltage is applied across the drain‐source contacts, so a reverse current is induced through the integrated junction and defects are then created.
Findings
The results point out to a dependence of the VDMOSFET reliability on the operating conditions which could induce parasitic effects on the structure. Induced defects alter the form of several MOSFET characteristics.
Originality/value
A new method of degradation is presented along with a series of characterization techniques‐based electrical parameters variations.
Keywords
Citation
El Bitar, R., Habchi, R., Salame, C., Khoury, A., Mialhe, P. and Nsouli, B. (2009), "VDMOSFET reliability dependence on the integrated drain‐source junction", Microelectronics International, Vol. 26 No. 1, pp. 33-36. https://doi.org/10.1108/13565360910923142
Publisher
:Emerald Group Publishing Limited
Copyright © 2009, Emerald Group Publishing Limited