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High‐quality In0.47Ga0.53N/GaN heterostructure on Si(111) and its application to MSM detector

L.S. Chuah (Nano‐Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang, Malaysia)
Z. Hassan (Nano‐Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang, Malaysia)
H. Abu Hassan (Nano‐Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang, Malaysia)

Microelectronics International

ISSN: 1356-5362

Article publication date: 18 April 2008

Abstract

Purpose

This paper aims to report on the use of radio frequency nitrogen plasma‐assisted molecular beam epitaxy (RF‐MBE) to grow high‐quality n‐type In0.47Ga0.53N/GaN on Si(111) substrate using AlN as a buffer layer.

Design/methodology/approach

Structural analyses of the InGaN films were performed by using X‐ray diffraction, atomic force microscopy, and Hall measurement. Metal‐semiconductor‐metal (MSM) photodiode was fabricated on the In0.47Ga0.53N/Si(111) films. Electrical analysis of the MSM photodiodes was carried out by using current‐voltage (IV) measurements. Ideality factors and Schottky barrier heights for Ni/In0.47Ga0.53N, was deduced to be 1.01 and 0.60 eV, respectively.

Findings

The In0.47Ga0.53N MSM photodiode shows a sharp cut‐off wavelength at 840 nm. A maximum responsivity of 0.28 A/W was achieved at 839 nm. The detector shows a little decrease in responsivity from 840 to 200 nm. The responsivity of the MSM drops by nearly two orders of magnitude across the cut‐off wavelength.

Originality/value

Focuses on III‐nitride semiconductors, which are of interest for applications in high temperature/power electronic devices.

Keywords

Citation

Chuah, L.S., Hassan, Z. and Abu Hassan, H. (2008), "High‐quality In0.47Ga0.53N/GaN heterostructure on Si(111) and its application to MSM detector", Microelectronics International, Vol. 25 No. 2, pp. 3-8. https://doi.org/10.1108/13565360810875949

Publisher

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Emerald Group Publishing Limited

Copyright © 2008, Emerald Group Publishing Limited