This paper aims to report on the use of radio frequency nitrogen plasma‐assisted molecular beam epitaxy (RF‐MBE) to grow high‐quality n‐type In0.47Ga0.53N/GaN on Si(111) substrate using AlN as a buffer layer.
Structural analyses of the InGaN films were performed by using X‐ray diffraction, atomic force microscopy, and Hall measurement. Metal‐semiconductor‐metal (MSM) photodiode was fabricated on the In0.47Ga0.53N/Si(111) films. Electrical analysis of the MSM photodiodes was carried out by using current‐voltage (I‐V) measurements. Ideality factors and Schottky barrier heights for Ni/In0.47Ga0.53N, was deduced to be 1.01 and 0.60 eV, respectively.
The In0.47Ga0.53N MSM photodiode shows a sharp cut‐off wavelength at 840 nm. A maximum responsivity of 0.28 A/W was achieved at 839 nm. The detector shows a little decrease in responsivity from 840 to 200 nm. The responsivity of the MSM drops by nearly two orders of magnitude across the cut‐off wavelength.
Focuses on III‐nitride semiconductors, which are of interest for applications in high temperature/power electronic devices.
Chuah, L.S., Hassan, Z. and Abu Hassan, H. (2008), "High‐quality In0.47Ga0.53N/GaN heterostructure on Si(111) and its application to MSM detector", Microelectronics International, Vol. 25 No. 2, pp. 3-8. https://doi.org/10.1108/13565360810875949
Emerald Group Publishing Limited
Copyright © 2008, Emerald Group Publishing Limited