Speeding up the simulation of the semiconductor device under microwave interference
ISSN: 0332-1649
Article publication date: 11 May 2010
Abstract
Purpose
The purpose of this paper is to study the impact of high‐power microwave interferences on electronic devices needs the simulation of semiconductor components. Although the semiconductor equations can be solved numerically by Newton method, the conventional Newton method exhibits significant speed degradation when the power of interference is high enough to cause device burnout. Therefore, this paper aims at speeding up the simulation of the semiconductor components under high‐power microwave interferences.
Design/methodology/approach
Some approximations in conventional Newton method works efficiently only when the electric field in the simulated semiconductor is relatively low. This is the reason of the formerly mentioned speed degradation problem. The proposed method speeds up the simulation by modifying these approximations to acquire enough precision in these high‐power situations.
Findings
The modified Newton method proposed in this paper shows an acceleration of 100‐150 percent compared to conventional method for typical applications. Moreover, the simulation speed becomes nearly independent of the power of the microwave interferences, which means the speed degradation phenomenon of the conventional method has almost been eliminated.
Originality/value
This paper proposes a modified Newton method to speed up the simulation of the semiconductor components under high‐power microwave interferences.
Keywords
Citation
Chen, X., Du, Z. and Gong, K. (2010), "Speeding up the simulation of the semiconductor device under microwave interference", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 29 No. 3, pp. 856-864. https://doi.org/10.1108/03321641011028350
Publisher
:Emerald Group Publishing Limited
Copyright © 2010, Emerald Group Publishing Limited