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Novel 4H‐SiC BJT utilizing floating buried layer in base for high current gain, high current gain stability and high breakdown voltage

Yourun Zhang (State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu, People's Republic of China)
Bo Zhang (State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu, People's Republic of China)
Zhaoji Li (State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu, People's Republic of China)
Xiaochuan Deng (State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu, People's Republic of China)
Xilin Liu (State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu, People's Republic of China)

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

ISSN: 0332-1649

Article publication date: 9 March 2010

347

Abstract

Purpose

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The purpose of this paper is to present a novel structure of 4H‐SiC bipolar junction transistor (BJT) to realize high current gain, high current gain stability, and high breakdown voltage.

Design/methodology/approach

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A novel structure of 4H‐SiC BJT with floating buried layer in the base epilayer is presented. The simulation and optimization are done using the TCAD tool.

Findings

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This novel structure is increasing the current gain effectively, at the same time, the current gain stability and breakdown voltage are higher comparing with the conventional structure.

Originality/value

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The paper proposes a new “4H‐SiC FBL‐BJT” with high current gain, high current gain stability and high breakdown voltage.

Keywords

Citation

Zhang, Y., Zhang, B., Li, Z., Deng, X. and Liu, X. (2010), "Novel 4H‐SiC BJT utilizing floating buried layer in base for high current gain, high current gain stability and high breakdown voltage", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 29 No. 2, pp. 515-521. https://doi.org/10.1108/03321641011014977

Publisher

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Emerald Group Publishing Limited

Copyright © 2010, Emerald Group Publishing Limited

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