Characterization of a DC magnetron sputtering device

Abstract

Purpose

The aim of this paper is to obtain an extensive experimental characterization of a DC magnetron sputtering device used for plasma processing of materials.

Design/methodology/approach

Models and measurements are combined for an interdisciplinary characterization of a DC magnetron sputtering device. Langmuir probes are used for the plasma characterization; the magnetic field is measured by using Hall probes and the data are used to validate a magnetostatic three‐dimensional numerical analysis of the device; precision mechanical measurements are done for the target erosion profile and the results are related to a simple estimation formula; a simple model is proposed for the target heating.

Findings

Data on magnetic and electric fields, electron temperature and density, plasma potential and target erosion are provided. An estimation of the target heating is proposed. Finally, an application concerning thin film deposition is reported.

Research limitations/implications

Measurement of the target surface temperature for the validation of the proposed target heating estimation has not been done.

Originality/value

In the field of the electromagnetic processing of materials, the reported extensive device characterization is a valuable set of information for an optimized utilization of DC magnetron sputtering devices.

Citation

Desideri, D., Bagatin, M., Spolaore, M., Antoni, V., Cavazzana, R., Martines, E., Serianni, G. and Zuin, M. (2005), "Characterization of a DC magnetron sputtering device", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 24 No. 1, pp. 261-270. https://doi.org/10.1108/03321640510571282