Search results

1 – 1 of 1
Article
Publication date: 2 May 2017

Wenke Lu, Lili Gao, Qinghong Liu, Jingduan Zhang and Haoxin Zhang

When designing the electrode widths of the electrode-width-weighted (EWW) input interdigital transducers (IDTs) according to the envelope amplitudes of the wavelet function, the…

Abstract

Purpose

When designing the electrode widths of the electrode-width-weighted (EWW) input interdigital transducers (IDTs) according to the envelope amplitudes of the wavelet function, the EWW wavelet transform processor (WTP) using surface acoustic wave (SAW) devices can be fabricated. The electrode widths have influence on the frequency characteristic of the EWW WTP using SAW devices. The purpose of this research is to solve the influence of the electrode width accuracy on the frequency characteristic of the EWW WTP using SAW devices.

Design/methodology/approach

In order to solve the influence of the electrode width accuracy on the frequency characteristics of the EWW WTP using SAW devices, the function between the electrode widths and the −3 dB bandwidth is derived. That the −3 dB bandwidth varies as the electrode widths is known according to this function so that the exposure time and the etching are presented as the two key problems.

Findings

Solutions to these problems are achieved in this study. As long as there is accurate exposure time, the precision IDTs (i.e. the precision electrode widths) will be obtained. The accuracy of the exposure time for the EWW WTP using SAW devices is ±1 per cent. Because the dry etching is a type of etching technology in gas medium, it can etch nanometer lines, even more fine lines, so that the dry etching is used in EWW WTP using SAW devices.

Originality/value

Research highlights solving the influence of the electrode width accuracy on the frequency characteristic for the EWW WTP using SAW devices; deriving the function between the electrode widths and the −3 dB bandwidth (it is known from this function that the −3 dB bandwidth varies as the electrode widths); and presenting the exposure time and the etching as two key problems.

Details

Microelectronics International, vol. 34 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

1 – 1 of 1