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1 – 1 of 1Myong‐Hoon Roh, Jun‐Hyeong Lee, Wonjoong Kim and Jea Pil Jung
The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging.
Abstract
Purpose
The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging.
Design/methodology/approach
The paper takes the form of a literature review.
Findings
Effective TSV technology for 3D packaging involves various processes such as via formation, filling with conductive material, wafer thinning, and chip stacking. Among these processes, high‐speed via filling without defect is very important for applying the TSV process to industry with a lower production cost. In this paper, the effects of various current forms on Cu electroplating of TSV such as direct current (DC), pulse current (PC), pulse reverse current (PRC), and periodic pulse reverse current (PPR) are described in detail including recent studies.
Originality/value
TSV is a core technology for high density 3D packaging. This paper overviews the recent studies of various current forms on Cu‐filling of TSV.
Details