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Aluminum nitride (AlN) ceramics are suitable substrate and package materials for high-power integrated circuits.

Dense AlN ceramics with Y₂O₃ and LaF₃ as sintering additives are prepared. The effects of these additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics are investigated.

Results show that 2 Wt.% Y₂O₃-doped additive is insufficient for the samples to achieve the full densification sintered at 1,700°C. When LaF₃ is added with Y₂O₃, the samples are perfectly densified at the same sintering condition. The relative density and thermal conductivity of the samples are 97.8-99.07 per cent and 169.104-200.010 W·m-1·K-1, respectively. The density of the samples and their microstructure, especially the content and distribution of secondary phases, is necessary to control the thermal conductivity of AlN ceramics.

Y₂O₃ and LaF₃ additives can effectively promote densification and enhance the thermal conductivity of AlN ceramics in a low sintering temperature, and the AlN ceramics added with Y₂O₃-LaF₃ might have potential applications in package materials for high-power integrated circuits.