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The purpose of this paper is to investigate the effect of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) on improvement of physical and electrical properties of vanadyl phthalocyanine derivative. The correlation between the physical characteristics of the active layers, comprising vanadyl 2,9,16, 23-tetraphenoxy-29H,31H-phthalocyanine (VOPcPhO) and PCBM, and the electrical properties of metal/organic/metal devices have been studied. The use of soluble vanadyl phthalocyanine derivative makes it very attractive for a variety of applications due to its tunable properties and high solubility.

The sandwich type structures Al/VOPcPhO/Al and Al/VOPcPhO:PCBM/Al were fabricated by spin casting the active organic layers between the top and bottom (aluminum) electrodes. The stand-alone (VOPcPhO) and composite (VOPcPhO:PCBM) thin films were characterized by X-ray diffraction, atomic force microscopy, UV/Vis and Raman spectroscopy. The electronic properties of the metal/organic/metal devices were studied using current-voltage (I-V) characteristics in dark at room temperature.

The values of barrier height for Al/VOPcPhO/Al and Al/VOPcPhO:PCBM/Al devices were obtained from the forward bias I-V curves and were found to be 0.7 eV and 0.62 eV, respectively. The present study indicates that the device employing VOPcPhO:PCBM composite film as the active layer, with better structural and morphological characteristics, results in reduced barrier height at the metal-organic film interface as compared to the one fabricated with the stand-alone film.

It is shown that doping VOPcPhO with PCBM improves the crystallinity, morphology and junction properties.

The spin coating technique provides a simple, less expensive and effective approach for preparing thin films. The soluble VOPcPhO is conveniently dissolved in a number of organic solvents.

The physical properties of the VOPcPhO:PCBM composite thin film and the electrical properties of the composite thin-film-based metal/organic/metal devices have not been reported in the literature, as far as our knowledge is concerned.

The purpose of this paper is a new thin-film based sensor proposed for sensitive and selective detection of mercury (Hg²⁺) ions in water. The thin-film platform is easy to use and quick for heavy metal ions (HMIs) detection in the picomolar range. Ion-selective self-assembled monolayer's (SAM) of thiol used for the detection of HMIs above the Au/Ti top surface.

A thin-film based platform is suitable for the on-field experiments and testing of water samples. HMIs (antigen) and thiol-based SAM (antibody) interaction results change in surface morphology and topography. In this study, the authors have used different characterization techniques to check the selectivity of the proposed method. This change in the morphology and topography of thin-film sensor checked with Fourier-transform infrared spectroscopy, surface-enhanced Raman scattering spectroscopy, atomic force microscopy and scanning electron microscopy with energy dispersive x-ray analysis used for high-resolution images.

This thin-film based platform is straightforward to use and suitable for real-time detection of HMIs at the picomolar range. This thin-film based sensor platform capable of achieving a lower limit of detection (LOD) 27.42 ng/mL (136.56 pM) using SAM of Homocysteine-Pyridinedicarboxylic acid to detect Hg²⁺ ions.

A thin-film based technology is perfect for real-time testing and removal of HMIs, but the LOD is higher as compared to microcantilever-based devices.

The excessive use and commercialization of nanoparticle (NPs) are quickly expanding their toxic impact on health and the environment. The proposed method used the combination of thin-film and NPs, to overcome the limitation of NPs-based technique and have picomolar (136.56 pM) range of HMIs detection. The proposed thin-film-based sensor shows excellent repeatability and the method is highly reliable for toxic Hg²⁺ ions detection. The main advantage of the proposed thin-film sensor is its ability to selectively remove the Hg²⁺ ions from water samples just like a filter and a sensor for detection at picomolar range makes this method best among the other current-state of the art techniques.

This paper concerns an all‐solid‐state, high‐contrast electroluminescent (EL) flat panel display which is becoming the potential for multifunctional avionic displays. In this ACTFEL (a.c. thin film electroluminescent flat panel) device, an active layer, doped with manganese (ZnS:Mn) is sandwiched between the two dielectric layers followed by conductive layers. All the layers are transparent except the back conductive layer. In the basic mode of operation, an alternating voltage is applied across any two crossing electrodes. When this voltage exceeds the ‘threshold voltage’, light is emitted from the active layer. EL mechanism (the generation of electrons, acceleration of these electrons to optical energies, and collision excitation of the Mn ions yielding light emission) occurs within the film or at the surface of the ZnS:Mn layer. A bright yellow light, in the visible region and with a relatively broad spectrum, is emitted. The TFEL display's thinness, compactness, low weight, moderately low power requirements and durability are its prime advantages. The characteristics of various thin films utilised in TFEL have been studied, and the data in this paper show the optimum requirements for luminance, efficiency and reliability of the light emission in ACTFEL.

Polymer substrates with micron size roughness features have been found to play an important role in the mechanical performance of thin functional films which are used extensively in stretchable and flexible micro electromechanical systems. The purpose of this study is to report the stretchability and flexibility limits of micro size silver nano platelet films on a soft polymer substrate having two different orientations of micro grating with respect to the applied load.

Parallel and perpendicular micro gratings on the surface of a soft polymer substrate polydimethylsiloxane were patterned using a carefully machined master aluminum block and thin aluminum foils. Silver nano platelet-based films were rod coated on the substrate surface containing the micro gratings. These films were dried in ambient air and were tested for their stretchability and flexibility limits using homemade tools. Finite element modeling has also been performed and was found to support the experimental observations.

Experiments indicate that stretchability of silver nano platelet-based thin films tends to increase when the grating orientation remains parallel to the axis of the applied load, while its flexibility improves when the orientation becomes perpendicular to the loading axis.

The effect of grating orientation with respect to the applied load was investigated. The experiments show that micro grating roughness features are capable of enhancing the mechanical performance of nano platelet-based silver films on a soft polymer substrate and can be used in various stretchable and flexible micro electro mechanical device applications.

It is of practical importance to measure and control the morphological state of thin film superconductors. Properties such as critical current, magnetic response and high frequency response are significantly affected by the microstructure of granular thin film specimens. A simple and functional method, magnetically modulated resistance, is described for assessing the granularity of superconductors.

The purpose of this paper is to investigate electrical properties of eutectic In8Sb8Te84 and In10Sb51Te39 as made thin films to evaluate their potential for non-volatile phase-change memories, once the thermal measurements are very optimistic.

The films were deposited by pulse laser deposition technique. By using a very simple home-made cell, transversal current-voltage curves films were measured involving both voltage controlled-pulses generator and current controlled-pulses generator, employing different pulse shapes: triangular and sine shaped.

The memory effect, characteristic of a typical phase-change memory material, was observed in both materials under research. For higher tellurium content in the film, lower is the value of threshold voltage.

Further studies on endurance, scaling and SET/RESET operations are needed.

The values of the key parameters, threshold voltage and hold voltage are comparable with those of Ge2Sb2Te5, GeTe and Sb2Te being considered to date as the main compounds for PCM devices.

The conduction mechanism in the amorphous regime is agreed with Poole–Frenkel effect in deep traps.

Even though copper–tungsten has shown signs of potentials, relatively little is currently known about its appropriateness for photovoltaic application. This paper aims to evaluate the suitability of copper-tungs oxides as photovoltaic absorbers while investigating the consequences of oxygen content variation.

Using profilometry, Hall measurements, Seebeck test and spectrophotometry, grown samples were defined. Samples of 5 standard cubic centimeters per minute (sccm) and 7 sccm exhibited appropriate characteristics and were further tested using personal computer one dimension (PC1D) computational simulation at the system stage. To grow materials with an average thickness below 0.45 µm, magnetron co-sputtering was used. Three sample sets, varied by oxygen flow rate, were made with flow rates of 5sccm, 7sccm and 9sccm, respectively.

Some samples proved to be effective absorbers, using a cadmium telluride device as the criterion of output calculation, with one sample chosen as ideal for each type of flow rate. For the chosen samples, an optimum thickness was also obtained, i. It was discovered that thinner cells, optimal for both groups with 0.6 µm, performed better to than other thicknesses.

The material also demonstrated prospects for applications in window layers, but more needs to be known.

Thin film material properties and their operating processes are relatively complex, so it is important to find simple and cost-effective ways to forecast performance. While relatively new, numerical modeling has proven to be very useful in defining the critical properties of thin film devices, thereby helpful for predictions of performance. Solar cell capacitance simulator one dimension, amorphous semiconductor analysis, personal computer one dimension (PC1D), analysis of micro-electronic and photonic structures and automat for simulation for heterostructures (33) are several common models in the thin film industry. Due to its availability and relative ease of use, PC1D was used in this project.

As the search for the balance among performance, cost, reliability and availability continue, more absorber components continue to evolve, notably from the chalcogenides. Because of their ability to absorb light, ternary transition metal chalcogenides are useful in the production of hydrogen and in the energy storage sector, as well as in the production of light-emitting diodes and solar photovoltaic (PV).

There are several methods for the manufacture of copper–tungsten alloys, but the process of combinatorial sputtering of magnetrons provides satisfactory results even for the manufacture of various other materials. Cu₂WSe₄, an excellent alternative to sputtering, is one of the very few copper–tungsten selenide materials tested, synthesized by hot simple injection to have strong crystallinity and lacks impurity. The optical properties of colloidal Cu₂WSe₄ show that Schottky diode–like behaviors are present in the material, suggesting its potential for use in solar cells. Cu-W alloys could have a lot more to give the PV industry, by all indications. Further exploration of the oxides by this work is thus justified. Transparent conducting oxides, interfacial layers or charge-transporting compounds are commonly used as transition metal oxides. Nevertheless, as absorbers, metal oxides such as BiFeO₃ and the traditionally highly studied Cu₂O have been tested, with Cu₂O showing a conversion efficiency of up to 10% under particular conditions. This displays strong electronic and optical properties, so there might be some possibility of studying other PV absorption metal oxides. The optical properties of colloidal Cu₂WSe₄ show that Schottky diode–like behaviors are present in the material, suggesting its potential for use in solar cells.

To study nonreciprocal effects in microstrip components due to ferrite thin film overlay.

The possibility of obtaining non reciprocal characteristics in the X band microwave region in the absence of external magnetic field by a simple process of using Mg, Co, Zn ferrite thin films as in‐touch overlay over λ/2 microstrip rejection filter was investigated. Microstrip rejection filter is basically a reciprocal component. The ferrite thin films were deposited by electroless plating.

It was found that frequency, pH and ferrite overlay material dependent changes occurred and differences in forward and reverse loss also observed, in some cases greater than 30 dB. Owing to the overlay the rejection properties of the filter is lost and there is an increase in insertion loss. The best non reciprocal effects are seen at higher frequencies. The presence of permeability related effects like magnetostatic modes interfering with the normal propagation of the microstrip circuits might be causing the changes in the circuits.

There is scope for true planarisation of ferrite‐based components by using the ferrite in thin film form as in‐touch overlay.

This study aims to propose a methodology by integrating three approaches, namely, internal core technology, external knowledge flow and industrial technology development to help companies improve their decision-making quality for technology planning and enhance their research and development (R&D) portfolio efficiency.

The primary focus of this study is thin-film solar technology and patent data is retrieved from the United States Patent and Trademark Office (USPTO) database. This study presents a methodology based on the proposed integrated analysis method, constructed with patent indicators, centrality analysis of social networks and main path analysis.

The results of this study can be itemized as – the core technological competency: companies involved in two specific technology fields have lower strength in R&D portfolio than leading companies with single-core technology. Knowledge flow: most companies in a network are knowledge producers/absorbers and technological development: diverse source and sink nodes were identified in the global main path during 1997-2003, 2004-2010 and 2011-2017.

Latecomer companies can emulate leaders’ innovation and enhance their technological competence to seek niche technology. Using the global main path, companies monitor outdated technologies that can be replaced by new technologies and aid to plan R&D strategy and implement appropriate strategic decisions avoiding path dependency.

The knowledge accumulation process helps in identifying the change of position and the role of companies; understanding the trend of industrial technology knowledge helps companies to develop new technology and direct strategic decisions. The novelty of this research lies in the integrated approach of three methods aiding industries to find their internal core technical competencies and identify the external position in the competitive market.