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1 – 10 of 37S. Patil and Vijaya Puri
The purpose of this paper is to report the effect of bismuth oxide thick films of various thicknesses on the X band (8‐12 GHz) response of Ag thick film microstrip rectangular…
Abstract
Purpose
The purpose of this paper is to report the effect of bismuth oxide thick films of various thicknesses on the X band (8‐12 GHz) response of Ag thick film microstrip rectangular patch antenna.
Design/methodology/approach
The effect of bismuth oxide thick film overlay of different thickness on Ag thick film microstrip rectangular patch antenna was investigated in the X band (8‐12 GHz). The change in the resonance frequency, amplitude, band width, quality factor, and input impedance of the antenna were studied. Using the resonance frequency the permittivity and conductivity of bismuth oxide thick film was measured.
Findings
Thickness of Bi2O3 thick film overlay dependent changes in the patch antenna characteristics is obtained. The resonance frequency shifts to higher frequency end due to overlay. The input impedance decreases due to the overlay. The dielectric constant of bismuth oxide thick film calculated from shift in resonance frequency shows thickness dependent values.
Originality/value
The microwave permittivity and conductivity of Bi2O3 thick film have been reported for the first time using overlay on thick film patch antenna. Thickness of overlay dependent tuning of the antenna has been achieved.
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The purpose of this paper is to study properties of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films for application in tuned devices.
Abstract
Purpose
The purpose of this paper is to study properties of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films for application in tuned devices.
Design/methodology/approach
The effect of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films overlay of different thickness on Ag thick film microstrip rectangular patch antenna was investigated in the X band (8‐12 GHz). Using Ag thick film microstrip rectangular patch antenna the thick and mixed thick films was characterized by microwave properties such as resonance frequency, amplitude, bandwidth, quality factor and input impedance. Using the resonance frequency the permittivity of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films was measured.
Findings
Cubic structure of single magnesium oxide and monoclinic structure of bismuth oxide was present in mixed thick film. Also the morphology of single thick films was maintained in mixed thick film of magnesium oxide‐bismuth oxide. Due to overlay magnesium oxide and magnesium oxide‐bismuth oxide mixed thick films, change in resonance frequency shifts towards high frequency end was observed. Dielectric constant of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick film calculated from resonance frequency decreased with increase in thickness.
Originality/value
The microwave properties using Ag thick film microstrip patch antenna due to overlay of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films have been reported for the first time. Thickness of overlay dependent tuning of the antenna has been achieved.
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The purpose of this paper is to report on the Ku band microwave characteristics of moisture laden soya seeds using overlay technique.
Abstract
Purpose
The purpose of this paper is to report on the Ku band microwave characteristics of moisture laden soya seeds using overlay technique.
Design/methodology/approach
Ku band (13‐18 GHz) moisture dependent microwave permittivity, conductivity, penetration depth of moisture laden soybean (Glycine Max) using overlay on Ag thick film equilateral triangular patch antenna are studied. The change in the frequency response of the patch antenna due to change in moisture content of the soybean overlay has been used to obtain the various microwave properties.
Findings
The permittivities obtained are in the range expected of moisture laden soybean. As moisture content increases microwave dielectric constant, dielectric loss, and conductivity of soybean increases. Only the amplitude data have been used here.
Originality/value
Ku band characterization of soybean has been done using overlay technique. The thick film patch antenna is sensitive even to ∼4 percent moisture content in the overlay material. This can be used for even moisture sensing at low moisture levels. This paper is believed to be an original research report.
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P.B. Kashid, D.C. Kulkarni, V.G. Surve and Vijaya Puri
The purpose of this paper is to study thickness dependent variation in microwave properties of the MgxMn(0.9−x)Al0.1Zn0.8Fe1.2O4 (x=0.8, 0.9) thick films and enhancement of power…
Abstract
Purpose
The purpose of this paper is to study thickness dependent variation in microwave properties of the MgxMn(0.9−x)Al0.1Zn0.8Fe1.2O4 (x=0.8, 0.9) thick films and enhancement of power efficiency of Ag thick film EMC patch antenna.
Design/methodology/approach
X‐band microwave properties of the MgxMn(0.9−x)Al0.1Zn0.8Fe1.2O4 (x=0.8, 0.9) thick films were measured by superstrate technique using Ag thick film EMC patch antenna as the resonant element. The complex permittivity and permeability of these thick films were also measured by this technique. The microwave response of the EMC patch, complex permeability and permittivity of Mg0.8Mn0.1Al0.1Zn0.8Fe1.2O4 and Mg0.9Al0.1Zn0.8Fe1.2O4 thick films and their thickness dependency were investigated.
Findings
The XRD patterns reveal the cubic spinel crystal system was obtained for both compositions. The crystallite size obtained was 134.68 nm for Mg0.8Mn0.1Al0.1Zn0.8Fe1.2O4 and 155.99 nm for Mg0.9Al0.1Zn0.8Fe1.2O4 The superstrate technique has been used successfully to evaluate the complex permittivity and permeability of the ferrite thick films in the X band. The EMC patch also show thickness and composition dependent frequency agility and enhancement of power efficiency.
Originality/value
The complex permeability of MgxMn(0.9−x)Al0.1Zn0.8Fe1.2O4 (x=0.8, 0.9) thick films measured by superstrate technique is reported in this paper. The superstrate of MgxMn(0.9−x)Al0.1Zn0.8Fe1.2O4 (x=0.8, 0.9) thick films makes the Ag thick film EMC patch antenna frequency agile and power amplification is obtained.
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Vijaya Puri, S.M. Salunkhe and M.M. Puranik
Use of thin film microstrip patch antenna for leaf moisture studies.
Abstract
Purpose
Use of thin film microstrip patch antenna for leaf moisture studies.
Design/methodology/approach
In this paper, the studies on the effect of leaf used as in‐touch overlay on thin film microstrip patch antenna in the X band (8‐12 GHz) is reported. The patch was used as the transmitting antenna and a pyramidal horn antenna was the receiving antenna. Three leaves Furcarea Gigantea, Kalanchoe Pinnata and Cereus Prerogonus have been used as overlay. All these leaves have high chlorophyll content, but are different in their surface texture and rate of moisture loss.
Findings
Size of leaf, orientation with respect to direction of propagation and moisture content dependent changes in the patch antenna output are observed. When the size of the overlay is larger than the patch and the feedline is in contact with it, frequency changes are more, whereas when only patch is in contact with the leaf, amplitude changes are more. Thin film microstrip antenna can provide a means for sensing moisture content in leafy vegetation.
Originality/value
The study of moisture effects of leafy vegetation using the technique of in‐touch overlay on microstrip components can be used to generate data base about the plant conditions in various places.
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S.N. Mathad, R.N. Jadhav and Vijaya Puri
The purpose of this paper was to determine the complex permittivity of bismuth strontium manganites (Bi1−xSrxMnO3) in the 8‐12 GHz range by using perturbation of Ag thick film…
Abstract
Purpose
The purpose of this paper was to determine the complex permittivity of bismuth strontium manganites (Bi1−xSrxMnO3) in the 8‐12 GHz range by using perturbation of Ag thick film microstrip ring resonator (MSRR) due to superstrate of both bulk and thick film.
Design/methodology/approach
The BSM ceramics were synthesized by simple low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. A comparison has been made between the X band response of Ag thick film microstrip ring resonator due to perturbation of bulk and thick film Bi1−xSrxMnO3 ceramic.
Findings
The bulk and thick film superstrate decreases the resonance frequency of MSRR. In this technique even minor change in the properties of superstrate material changes the MSRR response. Variation of strontium content also influences microwave conductivity and penetration depth of bulk and thick films.
Originality/value
The microwave complex permittivity decreases with increase in Sr content in bismuth manganite and it is higher for bulk as compared to its thick films. The superstrate on Ag thick film microstrip ring resonator is an efficient tool capable of detecting the composition dependent changes in microwave properties of ceramic bulk and thick films.
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Gang Wang, Chenhui Xia, Bo Wang, Xinran Zhao, Yang Li and Ning Yang
A W-band antennas-in-packages (AIP) module with a hybrid stacked glass-compound wafer level fan-out process was presented. Heterogeneous radio frequency (RF) chips were integrated…
Abstract
Purpose
A W-band antennas-in-packages (AIP) module with a hybrid stacked glass-compound wafer level fan-out process was presented. Heterogeneous radio frequency (RF) chips were integrated into one single module with a microscale fan-out process. This paper aims to find a new strategy for 5G communication with 3D integration of multi-function chips.
Design/methodology/approach
The AIP module was composed of two stacked layers: the antenna layer and RF layer. After architecture design and performance simulation, the module was fabricated, The 8 × 8 antenna array was lithography patterned on the 12 inch glass wafer to reduce the parasitic parameters effect, and the signal feeding interface was fabricated on the backside of the glass substrate.
Findings
AIP module demonstrates a size of 180 mm × 180mm × 1mm, and its function covers the complete RF front-end chain from the antenna to signal to process and can be applied in 5 G communication and automotive components.
Originality/value
With three RF multi-function chips and two through silicon via (TSV) chips were embedded in the 12 inch compound wafer through the fan-out packaging process; two layers were interconnected with TSV and re-distributed layers.
Xinran Zhao, Yingying Pang, Gang Wang, Chenhui Xia, Yuan Yuan and Chengqian Wang
This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss.
Abstract
Purpose
This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss.
Design/methodology/approach
An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius R of coaxial transition is optimized by designing and fabricating three samples.
Findings
The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius R of 155 µm exhibits S11 < –10 dB and S21 > –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth.
Originality/value
The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.
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