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Article
Publication date: 7 August 2017

Darko Belavič, Andraž Bradeško, Tomaz Kos and Tadej Rojac

In this contribution, the design and integration of a piezoelectric vibrating device into low-temperature, co-fired ceramic (LTCC) structures are presented and discussed. The…

Abstract

Purpose

In this contribution, the design and integration of a piezoelectric vibrating device into low-temperature, co-fired ceramic (LTCC) structures are presented and discussed. The mechanical vibration of the diaphragm was stimulated with a piezoelectric actuator, which was integrated onto the diaphragm. Three different methods for the integration were designed, fabricated and evaluated.

Design/methodology/approach

The vibrating devices were designed as an edge-clamped diaphragm with an integrated piezoelectric actuator at its centre, whose role is to stimulate the vibration of the diaphragm via the converse piezoelectric effect. The design and feasibility study of the vibrating devices was supported by analytical methods and finite-element analyses.

Findings

The benchmarking of the ceramic vibrating devices showed that the thick-film piezoelectric actuator responds weakly in comparison with both the bulk actuators. On the other hand, the thick-film actuator has the lowest dissipation factor and it generates the largest displacement of the diaphragm with the lowest driving voltage. The resonance frequency of the vibrating device with the thick-film actuator is the most sensitive for an applied load (i.e. mass or pressure).

Research limitations/implications

Research activity includes the design and the fabrication of a piezoelectric vibrating device in the LTCC structure. The research work on the piezoelectric properties of integrated piezoelectric actuators was limited.

Practical implications

Piezoelectric vibrating devices were used as pressure sensors.

Originality/value

Piezoelectric vibrating devices could be used not only for pressure sensors but also for other type of sensors and detectors and for microbalances.

Details

Microelectronics International, vol. 34 no. 3
Type: Research Article
ISSN: 1356-5362

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