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This study aims to develop a compact analytical models for undoped symmetric double-gate MOSFET based on carrier approach. Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects, ideal subthreshold slope and free dopant-associated fluctuation effects. DG MOSFET is of two types: the symmetric DG MOSFET with two gates of identical work functions and asymmetric DG MOSFET with two gates of different work functions. To fully exploit the benefits of DG MOSFETs, the body of DG MOSFETs is usually undoped because the undoped body greatly reduces source and drain junction capacitances, which enhances the switching speed. Highly accurate and compact models, which are at the same time computationally efficient, are required for proper modeling of DG MOSFETs.

This paper presents a carrier-based approach to develop a compact analytical model for the channel potential, threshold voltage and drain current of a long channel undoped symmetric DG MOSFETs. The formulation starts from a solution of the 2-D Poisson’s equation in which mobile charge term has been included. The 2-D Poisson’s equation in rectangular coordinate system has been solved by splitting the total potential into long-channel (1-D Poisson’s equation) and short-channel components (remnant 2-D differential equation) in accordance to the device physics. The analytical model of the channel potential has been derived using Boltzmann’s statistics and carrier-based approach.

It is shown that the metal gate suppresses the center potential more than the poly gate. The threshold voltage increases with increasing metal work function. The results of the proposed models have been validated against the Technology Computer Aided Design simulation results with close agreement.

Compact Analytical models for undoped symmetric double gate MOSFETs.

The aim of this paper is to formulate the effect of the process variation on various leakage currents and subthreshold swing factor in FinFET devices. These variations cause a large spread in leakage power, since it is extremely sensitive to process variations, which in turn results in larger temperature variations across different dies.

Owing to large temperature variation within the die, the authors investigate the variation of various leakage currents with absolute die temperature.

The results obtained on the basis of the model are compared and contrasted with reported numerical and experimental results. A close match was found which validates the analytical approach.

The analytical modeling of subthreshold leakage current, subthreshold swing, gate leakage current and its variation with process parameters are carried out in this paper.

This paper aims to characterize the relationship between the interelectrode capacitance (C) of metal-oxide-semiconductor field-effect transistors (MOSFETs) and the applied bias voltage (V) by a fractional-order equivalent model.

A Riemann–Liouville-type fractional-order equivalent model is proposed for the C–V characteristic of MOSFETs, which is based on the mathematical relationship between fractional calculus and the semiconductor physical model for the interelectrode capacitance of metal oxide semiconductor structure. The C–V characteristic data of an N-channel MOSFET are obtained by Silvaco TCAD simulation. A differential evolution-based offline scheme is exploited for the parameter identification of the proposed model.

According to the results of theoretical analysis, mathematical derivation, simulation and comparison, this paper illustrates that, along with the variation of bias voltage applied, the interelectrode capacitance (C) of MOSFETs performs a fractional-order characteristic.

This work uncovers the fractional-order characteristic of MOSFETs’ interelectrode capacitance. By the proposed model, the influence of doping concentration on the gate leakage parasitic capacitance of MOSFETs can be revealed. In the pre-defined doping concentration range, the relative error of the proposed model is less than 5% for the description of C–V characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). Compared to some existing models, the proposed model has advantages in both model accuracy and model complexity, and the variation of model parameters can directly reflect the relationship between the characteristics of MOSFETs and the doping concentration of materials. Accordingly, the proposed model can be used for the microcosmic mechanism analysis of MOSFETs. The results of the analysis produce evidence for the widespread existence of fractional-order characteristics in the physical world.

The purpose of this paper is to present an analytical drain current model for output characteristics of strained‐Si/SiGe bulk MOSFET.

A physics‐based model for current output characteristics and transconductance of strained‐Si/SiGe bulk devices has been developed incorporating the impact of strain (in terms of equivalent Ge mole fraction), strained silicon thin film thickness, gate work function, channel length and other device parameters. The accuracy of the results obtained using this model is verified by comparing them with 2D device simulations.

This model correctly predicts the output characteristics, I_DS−V_GS characteristics, transconductance and output conductance of the strained‐Si/SiGe MOSFET and demonstrates a significant enhancement in the drain current of the MOSFET with increasing strain in the strained‐Si thin film, i.e. with increasing equivalent Ge concentration in the SiGe bulk.

Can be implemented in a SPICE like simulator for studying circuit behaviour containing strained‐Si/SiGe bulk MOSFETs.

The model discussed in this paper can be easily implemented in a circuit simulator and used for the characterization of strained silicon devices. This complements the recent trend of investigation of new materials and device structures to maintain the rate of advancement in VLSI technology.

This paper presents, for the first time, a compact surface potential‐based analytical model for strained‐Si/SiGe MOSFETs which predicts the device characteristics reasonably well over their range of operation.

Pipelined analog-to-digital converters (ADCs) are widely used in electronic circuits. The purpose of this paper is to propose a new digital background calibration method to correct the capacitor mismatch, finite direct current (DC) gain and nonlinearity of residue amplifiers in pipelined ADCs.

The errors are corrected by defining new functions based on generalized Newton–Raphson algorithm. Although the functions have analytical solutions, an iterative procedure is used for calibration. To accelerate the calibration process, proper initialization for the errors is identified by using evaluation estimation block and solving inverse matrix.

Several behavioral simulations of a 12-bit 100MS/s pipelined ADC in MATLAB indicate that signal-to-(noise + distortion) ratio (SNDR) and spurious free dynamic range (SFDR) are improved from 30dB/33dB to 70dB/79dB after calibration. Calibration is achieved in approximately 2,000 clock cycles.

The digital part of the proposed method is implemented on field-programmable gate array to validate the performance of the pipelined ADC. The experimental result shows that the degradation of SNDR, SFDR, integral nonlinearity, differential nonlinearity and effective number of bits is negligible according to fixed-point operation vs floating-point in simulation results.

The novelty of this study is to use Newton–Raphson algorithm combined with appropriate initialization to reduce the number of divisions as well as calibration time, which is suitable in the recent nano-meter complementary metal oxide semiconductor technologies.

Quantum-dot cellular automata (QCA) has attracted computer scientists as new emerging nanotechnology for replacement the current CMOS technology because it has unique characteristics such as high frequency, extremely small feature size and low power consumption. The main building blocks in QCA are the majority gate and inverter so any Boolean function can be represented using these gates. Many important circuits were the target for implemented in this technology in an optimal form, such as random-access memory (RAM) cell. QCA-RAM cells were introduced in literature with different forms but most of them are not optimized enough. This paper aims to demonstrate QCA inherent capabilities that can facilitate the design of many important gates such as the XOR gate and multiplexer (MUX) without following any Boolean function to get an optimum design in terms of complexity and delay.

In this paper, a novel structure of QCA-MUX in an optimal form will be used to design two unique structures of a RAM cell. The proposed RAM cells are the lowest cost required compared with different counterparts. The presented RAM cells used a new approach that follows the new suggested block diagram. The presented circuits are simulated and tested with QCADesigner and QCAPro tools.

The comparison of the proposed circuits with the previously reported in the literature show noticeable improvements in speed, area, and the number of cells. The cost function analysis results for the proposed RAM cells show significant improvement compared to older circuits.

A novel structure of QCA-MUX in an optimal form will be used to design two unique structures of a RAM cell.