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Article
Publication date: 23 August 2022

Shireen Mohammed Abed, Sabah M. Mohammad, Zainuriah Hassan, Aminu Muhammad and Suvindraj Rajamanickam

The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon…

Abstract

Purpose

The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si) substrate that was prepared by a low-cost method (drop-casting technique).

Design/methodology/approach

The drop-casting method was used for the seed layer deposition, the hydrothermal method was used for the growth of ZnO NRs and subsequent fabrication of UV MSM photodetector was done using the direct current sputtering technique. The performance of the fabricated MSM devices was investigated by current–voltage (I–V) measurements. The photodetection mechanism of the fabricated device was discussed.

Findings

Semi-vertically high-density ZnO (NRs) were effectively produced with a preferential orientation along the (002) direction, and increased crystallinity is confirmed by X-ray diffraction analysis. Photoluminescence results show a high UV region. The fabricated MSM UV photodetector showed that the ZnO (NRs) MSM device has great stability over time, high photocurrent, good sensitivity and high responsivity under 365 nm wavelength illumination and 0 V, 1 V, 2 V and 3 V applied bias. The responsivity and sensitivity for the fabricated ZnO NRs UV photodetector are 0.015 A W-1, 0.383 A W-1, 1.290 A W-1 and 1.982 A W-1 and 15,030, 42.639, 100.173 and 334.029, respectively, under UV light (365 nm) illumination at (0 V, 1 V, 2 V and 3 V).

Originality/value

This paper uses the drop-casting technique and the hydrothermal method as simple and low-cost methods to fabricate and improve the ZnO NRs photodetector.

Details

Microelectronics International, vol. 40 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 14 June 2022

Aminu Muhammad, Sabah M. Mohammad, Zainuriah Hassan, Suvindraj Rajamanickam, Shireen Mohammed Abed and M.G.B. Ashiq

The purpose of this study is to dope silver (Ag) and fluorine (F) in zinc oxide (ZnO) for the enhancement of electrical and optical properties of ZnO, as previous studies…

Abstract

Purpose

The purpose of this study is to dope silver (Ag) and fluorine (F) in zinc oxide (ZnO) for the enhancement of electrical and optical properties of ZnO, as previous studies reported the improvement of these properties using individual doping of F and Ag. In this paper, F and Ag co-doped ZnO nanorods were synthesized using a modified hydrothermal method.

Design/methodology/approach

The hydrothermal method was modified and used for the synthesis of the doped ZnO nanostructures, where stainless autoclave and oven were replaced with the Duran laboratory bottle and water boiler system in the process. The ultraviolet metal-semiconductor-metal photodetector (PD) was fabricated using DC sputtering method.

Findings

Vertically aligned nanorods images were captured from field emission scanning electron microscopy. XPS analysis confirmed greater spin-orbital interaction in the F and Ag co-doped ZnO sample and revealed the presence of F, Ag, Zn and O in the samples, indicating a successful doping process. X-ray diffraction revealed a hexagonal wurtzite structure with enhanced crystal quality upon co-doping. The bandgap decreased from 3.19 to 3.14 eV upon co-doping because of reduced defects density in the sample. Finally, an ultra-violet PD was fabricated with enhanced sensitivity and response times upon co-doping.

Originality/value

The low-cost, less energy-consuming Duran laboratory bottle and water boiler system were used as the substitute of expensive, more energy-consuming stainless autoclave and oven in a hydrothermal method for synthesis of F and Ag co-doped ZnO and subsequent fabrication of PD.

Details

Microelectronics International, vol. 40 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

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