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The main purpose of this paper is to find a simple method to improve the breakdown voltage of BJTs fabricated on SOI.

We have used two‐dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n‐type implantation on the collector n/n+ junction side.

First, our method reduces the peak electric field at the silicon film‐BOX interface and secondly, the collector‐tub facilitates the collector potential to be absorbed by both collector drift and substrate regions improving the collector breakdown significantly.

An improved breakdown voltage improves the reliability of BJTs on SOI.

Our results show that the BV_CEO of the bipolar transistors with a collector‐tub is enhanced by 2.7 times when compared with a conventional lateral bipolar transistor (LBT) with identical drift region doping. This improvement has an important practical value in the fabrication of SOI‐based LBTs.