Search results

The purpose of this paper is to address the influence of deposition process parameters. The substrate heating mechanisms are also discussed.

Deposition duration, sputtering power, working gas pressure, and substrate heater temperature on substrate heating in the direct current (DC) magnetron sputtering deposition process were investigated.

Results from the experiments show that, in DC magnetron sputtering deposition process, substrate heating is largely influenced by the process parameters and conditions.

This paper usefully demonstrates that substrate heating effects can be minimized by adjusting and selecting the proper sputtering process parameters; the production cost can be reduced by employing a higher sputtering power, lower working gas pressure and shorter deposition duration.

The purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.

Direct current plasma magnetron sputtering technique was employed for the WSi film growth. Different sputtering parameters were investigated, and the WSi films were characterized using four‐point probe electrical measurement method.

The experimental results reveal that the sputtering parameters such as deposition pressure and substrate temperature exert significant influence on the electrical properties of the WSi films.

By tuning the sputtering parameters, the electrical properties of the WSi films can be optimized and the film resistivity can be reduced significantly.

The investigation results presented in this paper are useful information for microelectronic industries in the area of microelectronic devices metallization.

The fabrication method described in this paper allows fabricating low‐resistivity WSi films by employing a lower deposition pressure and a lower substrate temperature.

The purpose of this paper is to report the effect of sputtering time on the electrical and physical properties of ZrO_x. ZrO_x (measured thickness is ranging from 20.5 to 51.3 nm) thin films as gate oxide materials are formed by metal deposition at different sputtering time and thermal oxidation techniques.

Zirconium is deposited on silicon substrate at three different sputtering time; 30‐, 60‐ and 120‐s continued with an oxidation process conducted at 500°C for 15 min to form ZrO_x thin films. High‐resolution X‐ray diffraction (HR‐XRD), Fourier transform infrared (FTIR) spectroscopy and electrical characterizations were used to examine the properties of the thin film.

A broad ZrO_x peak lies in between 26° and 31° from HR‐XRD is presumed as the effect of small thickness of ZrO_x and or the ZrO_x is still partially crystalline. FTIR spectroscopy results suggested that besides ZrO_x, SiO_x interfacial layer (IL) has also formed in all of the investigated samples. As the sputtering time increases, hysteresis between the forward and reverse bias of capacitance‐voltage curve has reduced. The lowest leakage current density and the highest oxide breakdown voltage have been demonstrated by 60‐s sputtered sample. These may be attributed to a lower effective oxide charge and interface trap density. The extracted dielectric constant (κ) of these oxides is ranging from 9.4 to 18, in which the κ value increases with the increase in sputtering time.

ZrO_x thin film which was fabricated by sputtering method at different sputtering time and thermal oxidation techniques showed distinctive electrical results. SiO_x IL formed in the samples.

The purpose of this paper is to improve the corrosion resistance of stainless-steel bipolar plate by magnetron sputtering.

TiC/amorphous carbon composite film was deposited by magnetron sputter at four different temperature of 25°C, 200°C, 300°C and 400°C. The morphology, composition and structure of the film were characterized by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. And its corrosion behavior was analyzed through electrochemical impedance spectroscopy, potentiodynamic and potentiostatic polarization tests.

A compact TiC/amorphous carbon film was prepared by magnetron sputtering on 316L stainless steel, and the particles of the film were refined with the increase in sputtering temperature. High temperature promoted the formation of TiC and C–C sp² hybrid carbon, but excessively high temperature caused the oxidation of Ti and a significant decrease in sp² hybrid carbon. The corrosion resistance of the film increased with the temperature, and the corrosion current density polarization at 0.86 V and 1.8 V for TiC/a–C film prepared at 400 °C is only 1.2% and 43.2% of stainless steel, respectively.

The corrosion resistance of amorphous carbon films was improved by the doping of Ti carbide, and the appropriate sputtering temperature was obtained.

High‐dielectric thin films are considered as future dielectric for Si based advanced integrated circuit technology and also for the development of organic thin film transistors and micro sensors. The conventional dielectric SiO₂ is grown by thermal oxidation of silicon whereas the HfO₂ films are grown by both physical and chemical methods. Depending on film deposition technique, the film and interface characteristics are affected. The purpose of this paper is to investigate the effect of thermal annealing in oxygen and nitrogen ambient on the electrical properties of HfO₂‐based metal oxide semiconductor (MOS) capacitor and evaluate thermal stability of the characteristics.

HfO₂ films are deposited by rf sputtering and Al‐HfO₂‐Si MOS capacitor fabricated. The electrical I‐V and C‐V characteristics are measured and the effect of temperature in the range of 25‐200°C is evaluated for films annealed in oxygen and nitrogen.

It is found that thermal annealing in nitrogen reduces oxide trap density and improves the temperature stability compared to the film annealed in oxygen for MOS devices. From the conductance characteristics D_it oxide trap density in the film is estimated to be 2.1×10¹¹/cm² for nitrogen and 3.23×10¹¹/cm² for oxygen, which indicates the role of nitrogen in reducing oxide traps. The thermal activation energy of electron traps is found to be about 0.19 eV for nitrogen and 0.58 eV for oxygen annealed films in the temperature range of 25‐150°C.

The paper examines and compares the role and effect of thermal annealing in nitrogen ambient and oxygen ambient on the electrical properties of sputtered HfO₂ thin film for improved MOS device reliability.

The aim of the present paper is to investigate the mechanical performance of multi-layer films. With the wide application of optic and electronic thin-films, membrane materials and membrane technology have become one of the most active fields of research in contemporary materials science (Dumont et al., 1997). Multi-layer films have evolved as candidates for these applications because of their unique properties. TiN and Ti/TiN multi-layer films were fabricated using the DC magnetron sputtering method. A nano-indentation tester and electronic film distribution tester were utilized to evaluate the mechanical properties and residual stress of the films. The existence of interface effects on the mechanical properties and corrosion resistance of the films were analyzed.

In this study, the Ti/TiN multi-layer films were fabricated using the DC magnetron sputtering method. The films were deposited on polished 45# steels. Ti was used as the sputtering target. Ar and N₂ were applied as working and reactive gases, respectively. Surface morphology was measured using transmission electron microscopy. The composition was analyzed using D8 X-ray diffraction. Nano-indentation tests were performed using Nanoindenter G200 with a Berkovich indenter. A BGS 6341 electronic film stress distribution tester was used to measure the distribution of stress in the films.

The film surface was very smooth and the structure was very dense. The elastic modulus and micro-hardness of Ti/TiN multi-layer films were smaller, compared to those of the TiN film. Furthermore, both of these parameters initially decreased and later increased, with a decrease in the modulation period. The residual stress in the film was compressive. The corrosion resistance properties of TiN films were the best in NaCl solution, less so in alkaline solution and worst in acid solution. For the Ti/TiN multi-layer films tested in an acid medium, the corrosion resistance performance was better when the modulation period was decreased to micron grade under exposure conditions at ambient temperature.

In the present paper, the Ti/TiN multi-layer films were fabricated using PVD with different variations, and the influence on the performance of Ti/TiN multi-layer films due to each single layer period of TiN was studied. The findings should provide useful guidelines for the preparation of high quality Ti/TiN multi-layer thin films.

The purpose of this paper was to investigate the growth dependence of InN on Si substrate with different orientation through RF reactive magnetron sputtering in ambient temperature.

The authors fabricated indium nitride (InN) thin films by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The crystalline structure and surface morphology of the InN films were characterized by X‐ray diffraction (XRD), scanning electron microscope (SEM), energy‐dispersive X‐ray spectroscopy (EDX) and atomic force microscopy (AFM).

X‐ray diffraction results revealed that the wurtzite InN with preferential (101) orientation are deposited. Through the Scherrer structural analysis revealed nanocrystalline structure for InN films grown on Si (110), Si (100) and Si (111) orientation with crystallite size of 42.3, 33.8 and 24.1, respectively. The optical properties of InN layers were examined by Fourier transform infrared (FTIR) and micro‐Raman reflectance spectroscopy at room temperature. The observation of the E1(TO), A1(LO), and E2(high) phonon modes of the InN from the IR and Raman results confirmed that the deposited InN thin film has hexagonal structure.

Si (110) surface is not isotropic and it may offer a unique orientation plane for the nitride films which could reduce the defect density and the resulting tensile stress responsible for film cracking. Therefore, it is absolutely worth exploring the growth of InN on Si (110) by using relatively simple and cheap reactive sputtering technique.

The purpose of this study is to design and develop a new functional coating system for aerospace AL7075-T6 alloy that would evaluate the mechanical properties of the coating.

This paper outlines the scratch adhesion characterisation of Cr/CrAlN coating using a combination of radio frequency (RF) and direct current (DC) physical vapour deposition (PVD) magnetron sputtering. The surface morphology, microstructure and chemical composition of the Cr/CrAlN film were evaluated by optical microscopy (OM), field emission scanning electron microscopy (FESEM) integrated with energy-dispersive X-Ray spectroscopy (EDX) and atomic force microscopy (AFM). The film-to-substrate adhesion was measured by a scratch test machine manufactured with a detection system, motorized stages, penetration depth sensors, optical microscope and tangential frictional load sensors.

The AFM and ultra-micro hardness results showed an increase in surface roughness to about 20 per cent and hardness to about 74 per cent. Moreover, the film-to-substrate adhesion strength of 1,814 mN was obtained with PVD deposition process.

The main limitation of this work is caused by PVD deposition process. Besides, surface defects such as pinholes contribute to a decrease in adhesion strength.

The higher hardness of CrAlN coating is used to improve the properties of softer aluminium substrates. This hardness prevents ploughing-induced wear and provides greater adhesion strength by preventing coating delamination.

Until now, CrAlN is coated only on ferrous alloys. It has not yet been tried on aluminium alloys. Moreover, coating functionality depends on higher adhesion and failure mechanisms involved in the film-to-substrate system, which is significant in aerospace applications.

This paper aims to determine the crystallite size and microstrain values of AgSiN thin films using potential approach called approximation method. This method can be used as a replacement for other determination methods such as Williamson-Hall (W-H) plot and Warren-Averbach analysis.

The monolayer AgSiN thin films on Ti6Al4V alloy were fabricated using magnetron sputtering technique. To evaluate the crystallite size and microstrain values, the thin films were deposited under different bias voltage (−75, −150 and −200 V). X-ray diffraction (XRD) broadening profile along with approximation method were used to determine the crystallite size and microstrain values. The reliability of the method was proved by comparing it with scanning electron microscopy graph and W-H plot method. The second parameters’ microstrain obtained was used to project the residual stress present in the thin films. Further discussion on the thin films was done by relating the residual stress with the adhesion strength and the thickness of the films.

XRD-approximation method results revealed that the crystallite size values obtained from the method were in a good agreement when it is compared with Scherer formula and W-H method. Meanwhile, the calculations for thin films corresponding residual stresses were correlated well with scratch adhesion critical loads with the lowest residual stress was noted for sample with lowest microstrain and has thickest thickness among the three samples.

The fabricated thin films were intended to be used in antibacterial applications.

Up to the knowledge from literature review, there are no reports on depositing AgSiN on Ti6Al4V alloy via magnetron sputtering to elucidate the crystallite size and microstrain properties using the approximation method.

The purpose of this work is to present the strategies and current state of development in the field of micro solid oxide fuel cells (μSOFC).

In the paper recent strategies of conventional and single chamber μSOFC are described. Some examples based on the author's research are presented.

It can be concluded that scale down of ceramic technologies is still more popular than MEMS. However, MEMS‐based technologies become recently to be used more frequently.

The work is limited to the description of materials and technologies used in μSOFC.

The review presents very recent research in μSOFC. The results demonstrate critical areas in development of suitable technologies.