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The work aims to study the direct bonding of silicon substrate with solders type Sn-Ag-Ti.

During the bonding process with ultrasound assistance, the active element (Ti,Ce,Mg) is distributed from the solder to interface with a silicon substrate, where it supports the bond formation.

Formation of a reaction layer, 1-2 μm in thickness, was observed. The new Si2Ti phases and Mg2Si phase were identified in the reaction layer.

The results of analysis suggest that the Si/Sn-Ag-Ti joint is of diffusion character. The highest average strength on silicon substrate (39 MPa) was achieved with Sn-Ag-Ti(Mg) solder.

This study aims to solder AlN ceramics with a Cu substrate using an active type Sn-Ag-Ti solder. Soldering was performed with power ultrasound. The Sn3.5Ag2Ti alloy was first studied.

It was found to contain a Sn matrix, where both Ag phase – ɛ-Ag₃Sn – and Ti phases ɛ-Ti₆Sn₅ and Ti₂Sn₃ – were identified. Ti contained in these phases is distributed to the interface with ceramic material. A reaction layer was thus formed. This layer varies in thickness from 0.5 to 3.5 µm and ensures the wettability of an active solder on the surfaces of ceramic materials.

X-ray diffraction analysis proved the presence of new NTi and AlTi₂ phases on the fractured surface. Sn plays the main role in bond formation when soldering the Cu substrate with Sn-Ag-Ti solder. The Cu₃Sn and Cu₆Sn₅ phases, which grow in direction from the phase interface to solder matrix, were found in all cases within the solder/Cu substrate interface. The combination of AlN ceramics/Cu joint maintained a shear strength of 29.5 MPa, whereas the Cu/Cu joint showed a somewhat higher shear strength of 39.5 MPa.

The present study was oriented towards soldering of AlN ceramics with a Cu substrate by the aid of ultrasound, and the fluxless soldering method was applied. Soldering alloy type Sn-Ag-Ti was analysed, and the interactions between the solder and ceramic and/or Cu substrate were studied. The shear strength of fabricated soldered joints was measured.

This paper aims to investigate the effect of solder alloying with a small amount of La and Y on bond formation with the Si and Cu substrates.

Bi₂La and Bi₂Y solders were studied. Soldering was performed using a fluxless method in air and with ultrasonic activation.

It was found that in the process of ultrasonic soldering, the La and Y were distributed at the interface with Si and Cu substrates, which enhanced the bond formation. Addition of La or Y elements in a Bi-based solder also ensured wetting of non-metallic materials such as Si, Al₂O₃ and SiC ceramics.

The addition of lanthanides offers a method for ensuring wetting of non-metallic materials. The bond with Si was of an adhesive character without the formation of a new contact interlayer. This resulted in lower shear strength of the bond with Si (8-10 MPa). The shear strength of the bond with a Cu substrate was 22-30 MPa.

This study aims to analyze the shear strength and fracture mechanism of full Cu-Sn IMCs joints with different Cu₃Sn proportion and joints with the conventional interfacial structure in electronic packaging.

The Cu-Sn IMCs joints with different Cu₃Sn proportion were fabricated through soldering Cu-6 μm Sn-Cu sandwich structure under the extended soldering time and suitable pressure. The joints of conventional interfacial structure were fabricated through soldering Cu-100 μm Sn-Cu sandwich structure. After the shear test was conducted, the fracture mechanism of different joints was studied through observing the cross-sectional fracture morphology and top-view fracture morphology of sheared joints.

The strength of joints with the conventional interfacial structure was 26.6 MPa, while the strength of full Cu-Sn IMCs joints with 46.7, 60.6, 76.7 and 100 per cent Cu₃Sn was, respectively, 33.5, 39.7, 45.7 and 57.9 MPa. The detailed reason for the strength of joints showing such regularity was proposed. For the joint of conventional interfacial structure, the microvoids accumulation fracture happened within the Sn solder. However, for the full Cu-Sn IMCs joint with 46.7 per cent Cu₃Sn, the cleavage fracture happened within the Cu6Sn5. As the Cu₃Sn proportion increased to 60.6 per cent, the inter-granular fracture, which resulted in the interfacial delamination of Cu₃Sn and Cu6Sn5, occurred along the Cu₃Sn/Cu6Sn5 interface, while the cleavage fracture happened within the Cu6Sn5. Then, with the Cu₃Sn proportion increasing to 76.7 per cent, the cleavage fracture happened within the Cu6Sn5, while the transgranular fracture happened within the Cu₃Sn. The inter-granular fracture, which led to the interfacial delamination of Cu₃Sn and Cu, happened along the Cu/Cu₃Sn interface. For the full Cu₃Sn joint, the cleavage fracture happened within the Cu₃Sn.

The shear strength and fracture mechanism of full Cu-Sn IMCs joints was systematically studied. A direct comparison regarding the shear strength and fracture mechanism between the full Cu-Sn IMCs joints and joints with the conventional interfacial structure was conducted.