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Article
Publication date: 1 April 1991

G. Hobler, H. Pötzl, L. Palmetshofer, R. Schork, J. Lorenz, C. Tian, S. Gara and G. Stingeder

A three‐parameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amor‐phous silicon and from…

Abstract

A three‐parameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amor‐phous silicon and from channeling implantations into <100> and <100> silicon. Simulated boron profiles obtained with the new model, with the Lindhard model, and with the Oen‐Robinson model, respectively, are compared with experimental data on channeling and tilted implantations at 17 and 150 keV.

Details

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, vol. 10 no. 4
Type: Research Article
ISSN: 0332-1649

Article
Publication date: 26 April 2013

Maryam Amirhoseiny, Zainuriah Hassan and Sha Shiong Ng

The purpose of this paper was to investigate the growth dependence of InN on Si substrate with different orientation through RF reactive magnetron sputtering in ambient…

Abstract

Purpose

The purpose of this paper was to investigate the growth dependence of InN on Si substrate with different orientation through RF reactive magnetron sputtering in ambient temperature.

Design/methodology/approach

The authors fabricated indium nitride (InN) thin films by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The crystalline structure and surface morphology of the InN films were characterized by X‐ray diffraction (XRD), scanning electron microscope (SEM), energy‐dispersive X‐ray spectroscopy (EDX) and atomic force microscopy (AFM).

Findings

X‐ray diffraction results revealed that the wurtzite InN with preferential (101) orientation are deposited. Through the Scherrer structural analysis revealed nanocrystalline structure for InN films grown on Si (110), Si (100) and Si (111) orientation with crystallite size of 42.3, 33.8 and 24.1, respectively. The optical properties of InN layers were examined by Fourier transform infrared (FTIR) and micro‐Raman reflectance spectroscopy at room temperature. The observation of the E1(TO), A1(LO), and E2(high) phonon modes of the InN from the IR and Raman results confirmed that the deposited InN thin film has hexagonal structure.

Originality/value

Si (110) surface is not isotropic and it may offer a unique orientation plane for the nitride films which could reduce the defect density and the resulting tensile stress responsible for film cracking. Therefore, it is absolutely worth exploring the growth of InN on Si (110) by using relatively simple and cheap reactive sputtering technique.

Article
Publication date: 1 February 1992

Jack Hollingum

Sensors engineered on silicon chips have tremendous development potential and are attracting considerable attention in the USA and Japan. By contrast British research and…

Abstract

Sensors engineered on silicon chips have tremendous development potential and are attracting considerable attention in the USA and Japan. By contrast British research and development activities in this area have been weak, even compared with the work at other centres in Europe. BNF‐Fulmer has already completed construction of a clean room with a range of processing equipment and, in expanding its Microengineering Centre for contract and joint R&D projects with other companies, the organization is hoping to put the UK in the lead of European work, filling a vital gap between university research and the large microelectronics silicon foundries.

Details

Sensor Review, vol. 12 no. 2
Type: Research Article
ISSN: 0260-2288

Article
Publication date: 1 July 2006

Javad Dargahi, Mojtaba Kahrizi, Nakka Purushotham Rao and Saeed Sokhanvar

To measure the force applied to the tissue, the traditional endoscopic graspers might be equipped with a kind of tactile force sensor.

1556

Abstract

Purpose

To measure the force applied to the tissue, the traditional endoscopic graspers might be equipped with a kind of tactile force sensor.

Design/methodology/approach

This paper presents the design, analysis, microfabrication and testing of a piezoelectric and capacitive endoscopic tactile sensor with four teeth. This tactile sensor, which is tooth‐like for safe grasping, comprises a Polyvinylidene Fluoride, PVDF film for high sensitivity and is silicon‐based for micromachinability. Being a hybrid sensor, employing both capacitive and piezoelectric techniques, it is possible to measure both the static and dynamic loads. Another feature, to be considered in its design, is the ability to detect pulse. The proposed sensor can be integrated with the tip of any current commercial endoscopic grasper without changing its original design. It is shown that using an array of sensor units, the position of the applied load can still be determined.

Findings

The static response of the sensor is obtained by applying a static force on the tooth and measuring the change in capacitance between the bottom electrode of the PVDF film and the electrode deposited on the surface of the etched cavity. The dynamic response of the device is determined by applying a sinusoidal force on the tooth of the sensor and measuring the output voltage from the PVDF film. The experimental results are compared with both analytical and finite element results. The sensor exhibits high sensitivity and linearity.

Originality/value

Capaciyive and piezoelectic are used to obtain both dynamic,pulse, and static loads. The sensor micromachined so, it can be used in various endoscopic applications.

Details

Sensor Review, vol. 26 no. 3
Type: Research Article
ISSN: 0260-2288

Keywords

Content available
Book part
Publication date: 24 March 2021

Nirit Weiss-Blatt

Abstract

Details

The Techlash and Tech Crisis Communication
Type: Book
ISBN: 978-1-80043-086-0

Article
Publication date: 11 May 2010

John Lau, Ricky Lee, Matthew Yuen and Philip Chan

The purpose of this paper is to propose new 3D light emitting diodes (LED) and integrated circuits (IC) integration packages.

1322

Abstract

Purpose

The purpose of this paper is to propose new 3D light emitting diodes (LED) and integrated circuits (IC) integration packages.

Design/methodology/approach

These packages consist of the multi‐LEDs and active IC chip such as the application specific IC, LED driver, processor, memory, radio frequency, sensor, or power controller in a 3D manner. The assembly processes of these packages are also presented and discussed.

Findings

The advantages of these 3D integration packages are found to be: better performance, lower cost, less footprint, lighter package, and smaller form factor.

Originality/value

A thermal management system for 3D IC and LEDs integration packages is proposed.

Details

Microelectronics International, vol. 27 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 28 July 2021

Sudarsana Jena and Ankur Gupta

Considering its vast utility in industries, this paper aims to present a detailed review on fundamentals, classification and progresses in pressure sensors, along with its wide…

Abstract

Purpose

Considering its vast utility in industries, this paper aims to present a detailed review on fundamentals, classification and progresses in pressure sensors, along with its wide area of applications, its design aspects and challenges, to provide state-of-the-art gist to the researchers of the similar domain at one place.

Design/methodology/approach

Swiftly emerging research prospects in the micro-electro-mechanical system (MEMS) enable to build complex and sophisticated micro-structures on a substrate containing moving masses, cantilevers, flexures, levers, linkages, dampers, gears, detectors, actuators and many more on a single chip. One of the MEMS initial products that emerged into the micro-system technology is MEMS pressure sensor. Because of their high performance, low cost and compact in size, these sensors are extensively being adopted in numerous applications, namely, aerospace, automobile and bio-medical domain, etc. These application requirements drive and impose tremendous conditions on sensor design to overcome the tedious design and fabrication procedure before its reality. MEMS-based pressure sensors enable a wide range of pressure measurement as per the application requirements.

Findings

The paper provides a detailed review on fundamentals, classification and progresses in pressure sensors, along with its wide area of applications, its design aspects and challenges, to provide state of the art gist to the researchers of the similar domain at one place.

Originality/value

The present paper discusses the basics of MEMS pressure sensors, their working principles, different design aspects, classification, type of sensing diaphragm used and illustration of various transduction mechanisms. Moreover, this paper presents a comprehensive review on present trend of research on MEMS-based pressure sensors, its applications and the research gap observed till date along with the scope for future work, which has not been discussed in earlier reviews.

Details

Sensor Review, vol. 41 no. 3
Type: Research Article
ISSN: 0260-2288

Keywords

Article
Publication date: 3 January 2017

Abderrazzak El Boukili

The purpose of this paper is to develop and apply accurate and original models to understand and analyze the effects of the fabrication temperatures on thermal-induced stress and…

Abstract

Purpose

The purpose of this paper is to develop and apply accurate and original models to understand and analyze the effects of the fabrication temperatures on thermal-induced stress and speed performance of nano positively doped metal oxide semiconductor (pMOS) transistors.

Design/methodology/approach

The speed performances of nano pMOS transistors depend strongly on the mobility of holes, which itself depends on the thermal-induced extrinsic stress σ. The author uses a finite volume method to solve the proposed system of partial differential equations needed to calculate the thermal-induced stress σ accurately.

Findings

The thermal extrinsic stress σ depends strongly on the thermal intrinsic stress σ0, thermal intrinsic strain ε0, elastic constants C11 and C12 and the fabrication temperatures. In literature, the effects of fabrication temperatures on C11 and C12 needed to calculate thermal-induced stress σ0 have been ignored. The new finding is that if the effects of fabrication temperatures on C11 and C12 are ignored, then, the values of stress σ0 and σ will be overestimated and, then, not accurate. Another important finding is that the speed performance of nano pMOS transistors will increase if the fabrication temperature of silicon-germanium films used as stressors is increased.

Practical implications

To predict correctly the thermal-induced stress and speed performance of nano pMOS transistors, the effects of fabrication temperatures on the elastic constants required to calculate the thermal-induced intrinsic stress σ0 should be taken into account.

Originality/value

There are three levels of originalities. The author considers the effects of the fabrication temperatures on extrinsic stress σ, intrinsic stress σ0 and elastic constants C11 and C12.

Details

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, vol. 36 no. 1
Type: Research Article
ISSN: 0332-1649

Keywords

Article
Publication date: 5 December 2017

Peng Wang, Yulong Zhao, You Zhao, Qi Zhang and Anjiang Cai

The purpose of this paper is proposed a new structure design for high performance accelerometer.

Abstract

Purpose

The purpose of this paper is proposed a new structure design for high performance accelerometer.

Design/methodology/approach

An improved sensitivity structure considering sensitivity, natural frequency and cross-axis sensitivity is established and realized. The proposed structure was designed to improve the trade-off between the sensitivity and the natural frequency of piezoresistive accelerometer and eliminate the lateral sensitivity effect by the specific configuration, which is made possible by incorporating slots into the eight-beam structure. The mechanical model and its mathematical solution are established for calculating the sensitivity and natural frequency behavior of the designed structure. The developed sensor is fabricated on the n-type single-crystal silicon wafer and packaged for experiment. The accelerometer prototype was tested in the centrifugal machine and dynamic calibration system.

Findings

The experimental results show that the sensitivity of the designed sensor is 0.213 mV/(Vg) and the natural frequency of the sensor is 14.22 kHz. Compared with some piezoresistive accelerometers in literatures, the designed sensor possesses a suitable characteristic in sensitivity, natural frequency and transverse effect, which allows its usage in measuring high frequency vibration signals.

Originality/value

The accelerometer with slotted eight-beam structure shows a good performance in the static and dynamic experiments and can be used in measuring high frequency vibration signals.

Details

Sensor Review, vol. 38 no. 1
Type: Research Article
ISSN: 0260-2288

Keywords

Article
Publication date: 1 February 1946

F./O.E.A. Simonis and A.D. Moore

AT the end of the war in Europe, Germany had two aircraft jet engines in operational use; the Junkers Jumo 004, which has already been described, and the BMW 003 which forms the…

Abstract

AT the end of the war in Europe, Germany had two aircraft jet engines in operational use; the Junkers Jumo 004, which has already been described, and the BMW 003 which forms the subject of this article. Compared with the Junkers 004 the BMW engine can be described as having gone one stage further in the development of the axial compressor engine, but production figures were not as great as those of the Junkers. Several hundred had been built, mainly for the Heinkel He 162 Volksjäger—the high‐speed fighter with the engine mounted over the fuselage. The engines made in the 003 series are the 003‐A0, ‐Al, ‐A2, ‐E1 and ‐E2. These are all similar and have much the same performance. The latest in this series, the 003‐A2, is shown in fig. 1, and although production was planned on a large scale, only a few of this type were actually made.

Details

Aircraft Engineering and Aerospace Technology, vol. 18 no. 2
Type: Research Article
ISSN: 0002-2667

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