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The paper aims to get the knowledge about electrical properties, including noise, of modern polymer thick-film resistors (TFRs) in a wide range of temperature values, i.e. from 77 K up to room temperature. The sample resistors have been made of different combinations of resistive compositions, either ED7100 or MINICO (M2013, M2010), and conducting pastes (for contacts) Cu- or Au-based, deposited on FR-4 laminate.

The paper opted for an experimental study using either current noise index measurement in room temperature for large batch of samples or noise spectra measurement in temperature range 77-300 K for selected samples. Obtained noise maps, i.e. plots of power spectral density of voltage fluctuations vs frequency and temperature, have been used for evaluation of noise describing parameters like material noise intensity C and figure of merit K, for TFRs made of different combinations of resistive/conductive materials. Comparison of the parameters gives the information about the quality of the technology and matching the conductive/resistive materials.

Experiments confirmed that the main noise component is 1/f resistance noise. However, low-frequency noise spectroscopy revealed that also noise components of Lorentzian shape, associated with thermally activated noise sources exist. Their activation energies have been found to be of a few tenths of eV.

The noise intensity of polymer TFRs depends on technology process and/or contacts materials. The use of Au contacts leads to better noise properties of the resistors. The results of the studies might be helpful for further improvement of thick-film technology, especially for manufacturing low-noise, stable and reliable TFRs.

The paper includes indications for the materials selection for thick-film technology to manufacture low-noise, reliable and stable TFRs.

Experimental studies of electrical properties of polymer TFRs by means of noise spectra measurements in wide range of temperature is rare. They give fundamental knowledge about noise sources in the modern passive electronic components as well as practical indications of selection material for thick-film technology, to obtain high performance components and get technological advantage.

The embedding of passive components such as resistors, capacitors and inductors within printed circuit boards (PCBs) is motivated, to a large extent, by the desire for increased miniaturisation of electronic goods. However, resistors and, to a lesser extent, inductors are heat generating devices, and the temperature developed within PCBs as the result of the operation of embedded passives is a significant aspect of the design of a multilayer PCB. Here we investigate, by simulation, temperature fields associated with operation of embedded resistors. It is shown that for board dimensions less than 2cm × 2cm temperatures achieved are higher than those associated with larger boards having identical structures and identical resistor heat generation. Detailed simulations are used to investigate the sensitivity of the temperature rises associated with embedded resistors to copper track coverage and to thermal coupling of the PCB to ambient on its upper and lower surfaces. The implications of these findings are discussed both in the context of the design of real PCBs and in the context of thermal simulation.

The paper aims to present a research on the impact of the stabilization process of a thin metallic layer (Ni-P) produced on a ceramic surface (Al₂O₃) by means of electroless metallization on its electric parameters and structure. On the basis of the research conducted, the existence of a relationship between resistance (R) and the temperature coefficient of resistance (TCR) of the test structure with a Ni-P alloy-based layer and the temperature of stabilization was proposed.

Metallic Ni-P layers were deposited on sensitized and activated substrates. Metallization was conducted in an aqueous solution containing two primary ingredients: sodium hypophosphite and nickel chloride. The concentration of both ingredients was (50-70) g/dm³. The process lasted 60 min, and the metallization bath pH was kept at 2.1-2.2, whereas the temperature was maintained at 363 K. The thermal stabilization process was conducted in different temperatures between 453 and 623 K. After the technological processes, the resistance and TCR of the test structures were measured with a micro ohmmeter. The composition and the morphology of the resistive layer of the structures examined was also determined.

The dependence of the resistance on the temperature of the stabilization process for the temperature range 553 to 623 K was described using mathematical relationships. The TCR of test resistors at the same thermal stabilization temperature range was also described using a mathematical equation. The measurements show that the resistive layer contains 82.01 at.% of nickel (Ni) and 17.99 at.% of phosphorus (P).

The results associate a surface morphology Ni-P alloy with the resistance and TCR according to temperature stabilization. The paper presents mathematical relationships that have not been described in the literature available.

The separation of thick‐film resistor temperature characteristics into two components is presented. One of the components is a function of the resistive material, the other a function of the linear expansion coefficient mismatch between the substrate and the resistive layer. The analysis has been carried out by two methods: by taking the temperature characteristics of the resistive material in the form of pearls, and by generating compressive stress in the resistive layer corresponding to the stress created by the temperature rise.

The purpose of this paper is to characterize electrical parameters of amorphous Ni‐P resistive layers used for fabrication of precise resistors.

Ni‐P resistive layers were produced by the chemical process in water solution using Ni^2 + and H₂PO₂⁻ ions. The paper presents the results of the studies concerning the influence of bath acidity and conditions of thermal stabilization on the structure and temperature coefficient of resistance of Ni‐P alloy.

The temperature coefficient of resistance of amorphous Ni‐P layers was found to depend significantly on the parameters of chemical metallisation process. It was stated that the changes of through‐casing resistivity versus the acidity of technological solution have roughly parabolic characteristics.

In this paper, it was at first explained how the changes of the structure of Ni‐P resistive layers depend on their temperature coefficient of capacitance.

This paper aims to select parameters such as temperature thermal stability and temperature coefficient of resistance (TCR) for Ni–P resistive alloys obtained by electroless metallization. Ni–P alloys are used in the manufacture of precision resistors characterized by TCR in the range of ± 10 ppm/K. The correlation of the technological parameters with the electrical properties of resistors enables the accurate prediction of the TCR resistors.

The Ni–P layers were obtained by a continuous process at about 373 K in a solution with the acidity of pH = 2 and then dried for two hours at 393 K. Subsequently, the Ni–P layer was stabilized for two hours in the temperature range of 453-533 K. Resistance was measured with an accuracy of 1 mΩ. TCR was determined with an accuracy of 1 ppm/K in the temperature range 298-398 K. In the next stage of the investigation, the increase in TCR of the Ni–P alloy was correlated with the increase in stabilization temperature. Scanning electron microscope images of the alloy surface were studied to assess grain sizes and to relate the average grain size with TCR values of resistive alloys. The X-ray diffraction analysis was performed to determine the crystallization temperature of Ni–P alloy.

The conducted investigation showed that the TCR increase in alloy is a linear function of stabilization temperature in the temperature range in which transition from amorphous phase to crystalline phases did not occur. TCR increase in Ni–P alloy arises from the increase of average size of grains resulting in decrease of scattering of electrons on grain boundaries. The analysis of alloy composition in chosen fragments of surface shows inhomogeneity growing with decreasing analyzed surface dimensions which proves that, before the stabilization, the structural arrangement of alloy is inconsiderable.

The obtained results are the first attempt to relate the morphology of surface with TCR of alloy and demonstration of linear dependence between an increase in TCR of amorphic Ni–P alloy and stabilization temperature of resistive layer. Such correlations are not described in available literature.

Investigations of material parameters within the system Al, Al₂O₃, Ta, Ta₂O₅ and TaO_xN_1‐x are presented. This combination is characteristic when using Al sheet for production of substrates including electronic interconnections, vias and resistive groups. They can serve for MCMs due to the specific features of Al. The technological process includes first electrochemical oxidation of Al‐sheet as base isolation layer Al₂O₃ (50‐70μm). This process is followed by vacuum deposition of relatively thick layers of Al (2‐5μm). Each layer is then processed by lithographic methods followed by selective electro‐chemical oxidation as a help process for structuring. The development of this combined structuring method allows the simultaneous achievement of interconnections (Al) and isolation (Al₂O₃) levels with least size up to 50μm. The importance of the method consists of a vertical combination of several conductive layers of Al structured as described above, “burying” the interconnections in the insulating Al₂O₃ films. All necessary combinations and configurations of different kinds of microstrip lines are possible. The dielectric characteristics of Al₂O₃, achieved through the above mentioned method, can be changed in accordance with the parameters of the technological steps and filling of the porous structure. Thus some interesting high frequency features of microstrips are obtained. Extra advantage is the ability of combination of conductive Al layers with other types of such layers as tantalum (Ta). With Ta can be achieved other permittivity constants of the insulation layers and in combination with TaO_xN_1‐x intermediate planes of resistive groups are developed. The measurement of the stripline parameters is done by microwave technics, because the desired application of the substrates is for high‐speed digital signals in the GHz range.

The paper aims to present the research results related to transparent heating elements made from carbon nanomaterials. Heating elements were fabricated only with cost-effective techniques with the aim to be easily implemented in large area applications. Presented materials and methods are an interesting alternative to vacuum deposition of transparent resistive layers and etching of low-resistive patterns. Fabricated heating elements were designed to be used as de-icing structures in roof-top windows.

The paper presents the research results related to transparent heating elements made from carbon nanomaterials. Heating elements were fabricated only with cost-effective techniques with the aim to be easily implemented in large area applications. Presented materials and methods are an interesting alternative to vacuum deposition of transparent resistive layers and etching of low-resistive patterns. Fabricated heating elements were designed to be used as de-icing structures in roof-top windows.

The sheet resistance of obtained layers was between 9 and 11 kΩ/□; however, double-walled carbon nanotubes showed significantly higher optical transmission (around 70 per cent) than graphene nanoplatelets (around 55 per cent for visible and near infrared range). The amount of polymer resin had the influence on the paints stability, electrical properties and coatings adhesion.

Results show a novel method of fabrication of a large area and transparent heating elements with tunable resistance done through the change of spray coating paint composition.

Recent progress in the investigation of the material parameters of Al/Al₂O₃systems leads to an increase in the possibilities for using embedded TaO_XN_1‐X layers. The use of Al‐sheets as mechanical strength carriers in combination with vacuum‐deposited Al‐layers and electrochemically anodized Al₂O₃ structure requires study. This was found to create a periodic multilayer Al/Al₂O₃ structure. The material qualities of this system allow optimization in order to achieve high speed data processing and signal propagation. The existing studies using Al and Ta combination as well as the high resistance qualities of the modified TaO_XN_1‐X layers have shown satisfactory results. It can be concluded that the development of this new layer combination is possible in the multilayer carrier structures. Some preliminary research studies show a proper adhesion and satisfactory characteristics of the two integrated resistive planes in the multilayer combination Al/Al₂O₃//TaO_XN_1‐X/Ta₂O₅/Al.

The purpose of this paper is to present the properties of thick-film resistors made of novel pastes prepared from glass and graphite.

Graphite-based resistors were made of thick-film pastes with different graphite-to-glass mass fraction were prepared and examined. Sheet resistance, temperature coefficient of resistance, impact of humidity and short-term overload were investigated. The properties of the layers fired in atmospheres of air at 550°C and nitrogen at 875°C were compared.

Graphite-based resistors with various graphite-to-glass ratios made possible to obtain a wide range of sheet resistance from single O/square to few kO/square. These values were dependent on firing atmosphere, paste composition and the number of screen-printed layers. The samples made of paste with 1:1 graphite-to-glass ratio exhibited the temperature coefficient of resistance of about −1,000 ppm/°C, almost independently on the firing atmosphere and presence of a top coating. The resistors fired in the air after coating with overglaze, exhibited significantly lower sheet resistance, reduced impact of humidity and improved power capabilities.

In this paper, graphite-based resistors for applications in typical high-temperature cermet thick-film circuits were presented, whereas typical graphite-based resistors were fabricated in polymer thick-film technology. Owing to very low cost of the graphite, the material is suitable for low-power passive circuits, where components are not subjected into high temperature, above the typical temperature of operation of standard electronic components.