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Article
Publication date: 1 January 1972

P.G. Garrett

Although the technique of electron curing has been well developed, there are very few suitable coatings available.

Abstract

Although the technique of electron curing has been well developed, there are very few suitable coatings available.

Details

Pigment & Resin Technology, vol. 1 no. 1
Type: Research Article
ISSN: 0369-9420

Content available
Article
Publication date: 1 October 2000

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Abstract

Details

Aircraft Engineering and Aerospace Technology, vol. 72 no. 5
Type: Research Article
ISSN: 0002-2667

Keywords

Article
Publication date: 14 June 2013

Robert Bogue

This paper aims to describe the effects of radiation on certain classes of sensors and electronic devices and discusses the sensors used in high radiation environments.

Abstract

Purpose

This paper aims to describe the effects of radiation on certain classes of sensors and electronic devices and discusses the sensors used in high radiation environments.

Design/methodology/approach

Following an introduction, this paper firstly discusses the effects of radiation on semiconductors. It then considers the sensor technologies employed in high radiation applications and examines the impact of radiation on MEMS devices. Finally, it describes a radiation‐tolerant imaging sensor technology.

Findings

Ionising and non‐ionising radiation in terrestrial and space environments can exert a detrimental effect on semiconductor devices and has led to the development of a range of radiation hardening technologies. Most of the sensors used in nuclear power plants utilise long‐established and well‐characterised technologies which are inherently radiation‐tolerant but silicon MEMS devices are more prone to damage and a range of failure mechanisms have been identified. Most conventional image sensors are susceptible to radiation damage but a radiation‐hard technology termed the charge‐injection device has been developed which overcomes these problems.

Originality/value

This paper provides details of the sensor technologies used in high radiation applications.

Details

Sensor Review, vol. 33 no. 3
Type: Research Article
ISSN: 0260-2288

Keywords

Article
Publication date: 22 September 2022

Youxin Zhang, Yang Liu, Rongxing Cao, Xianghua Zeng and Yuxiong Xue

Concerning the radiation effects on the three-dimensional (3D) packaging in space environment, this study aims to investigate the influence of the total dose effect on the…

Abstract

Purpose

Concerning the radiation effects on the three-dimensional (3D) packaging in space environment, this study aims to investigate the influence of the total dose effect on the transmission characteristics of high-frequency electrical signals using experimental and simulation methods.

Design/methodology/approach

This work carries out the irradiation test of the specimens and measures their S21 parameters before and after irradiation. A simulation model describing the total dose effect was built based on the experimental test results. And, the radiation hardening design is evaluated by the simulation method.

Findings

The experimental results demonstrate that the S21 curve of the interconnection decreases with the increase of the irradiation dose, indicating that the total dose effect leads to the decline of its signal transmission characteristics. According to the simulation results, decreasing the height of the through silicon via (TSV), increasing the radius of the TSV, reducing the length of Si and increasing the number of grounded through silicon via have positive effects on improving the radiation resistance of the interconnection structure.

Originality/value

This work investigates the effect of radiation on the transmission characteristics of interconnection structures for 3D packaging and proposes the hardening design methods. It is meaningful for improving the reliability of 3D packaging in space applications.

Details

Microelectronics International, vol. 40 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 1 June 1991

Magnus Paulsson

Analog designers working infields such as aerospace, the defense and nuclear industries, telecommunications and medical electronics have long faced a special problem when trying…

Abstract

Analog designers working infields such as aerospace, the defense and nuclear industries, telecommunications and medical electronics have long faced a special problem when trying to source application‐specific integrated circuits (ASICs) for their designs. Although digital ASICs have long been available with the degree of radiation hardening normally required for these applications, sourcing radiation‐hardened (‘rad‐hard’) analog ASICs has been much more difficult. In particular, the CMOS/SOS technology used very successfully to produce rad‐hard digital ASICs has long been considered to be fundamentally unsuitable for analog designs. Only now has CMOS/SOS technology been developed to the point where highly integrated, high‐performance rad‐hard analog ASICSs can be made readily available — thanks to a breakthrough by Swedish semiconductor specialists ABB HAFO that is now opening up new opportunities for analog designers everywhere.

Details

Aircraft Engineering and Aerospace Technology, vol. 63 no. 6
Type: Research Article
ISSN: 0002-2667

Article
Publication date: 7 June 2022

Wan Yusmawati Wan Yusoff, Norliza Ismail, Nur Farisa Nadia Mohmad Lehan, Azuraida Amat, Ku Zarina Ku Ahmad, Azman Jalar and Irman Abdul Rahman

This paper aims to investigate the effect of different doses of gamma radiation on the micromechanical response (hardness properties and creep behaviour) of 96.5Sn-3.0Ag-0.5Cu…

Abstract

Purpose

This paper aims to investigate the effect of different doses of gamma radiation on the micromechanical response (hardness properties and creep behaviour) of 96.5Sn-3.0Ag-0.5Cu (SAC305) solder alloys.

Design/methodology/approach

SAC305 solder pastes deposited on printed circuit boards (PCBs) were subjected to a reflow soldering process to form soldered samples. The soldered samples were irradiated with a gamma source at different doses (5–50 Gy). Nanoindentation testing was used to determine the hardness properties and creep behaviour after gamma irradiation.

Findings

The results showed that the hardness of SAC305 solder alloys gradually increased up to 15 Gy and then gradually decreased to 50 Gy of gamma irradiation. The highest hardness value (0.37 GPa) was observed on SAC305 solder alloys exposed to 15 Gy irradiation. Hardening of SAC305 solder alloy was suggested to be due to the high defect density induced by the gamma irradiation. Meanwhile, exposure to 50 Gy irradiation resulted in the lowest hardness value, 0.13 GPa. The softening behaviour of SAC305 solder alloy was probably due to the evolution of defect size in the solder joint. In addition, the creep behaviour of the SAC305 solder alloys changed significantly with different gamma irradiation doses. The creep rates were higher at a dose of 10 Gy up to a dose of 50 Gy. Gamma irradiation caused the SAC305 solder alloy to become more ductile compared to the non-irradiated alloy. The stress exponent also showed different deformation mechanisms with varying gamma doses.

Originality/value

Research into the micromechanical properties of solder alloys subjected to gamma irradiation has rarely been reported, especially for Sn-Ag-Cu lead-free solder. Thus, this research provides a fundamental understanding of the micromechanical response (hardness and creep behaviour) of solder, especially lead-free solder alloy, to gamma irradiation.

Details

Soldering & Surface Mount Technology, vol. 35 no. 1
Type: Research Article
ISSN: 0954-0911

Keywords

Article
Publication date: 1 October 1998

Ted Speers and Andy Biddle

Describes Actel’s programmable technology. Early adopters of this technology, in both Europe and North America in experimental and telecommunication space programmes used these…

478

Abstract

Describes Actel’s programmable technology. Early adopters of this technology, in both Europe and North America in experimental and telecommunication space programmes used these field programmable gate arrays (FPGAs) very successfully. Owing to the success of these early adopters, Actel transferred its technology to a radiation hardened wafer fab and now offers a rad hard version of its commercial product, serving the needs of the traditional government end use space market and long lifetime missions. Since the introduction of the rad hard FPGAs the industry has undergone major shifts in attitudes. While there is still a significant demand for radiation hardened devices, lower cost alternatives with a lower level of radiation tolerance are expected to exist in the majority of space programmes.

Details

Aircraft Engineering and Aerospace Technology, vol. 70 no. 5
Type: Research Article
ISSN: 0002-2667

Keywords

Article
Publication date: 1 June 2020

Divya Madhuri Badugu, Sunithamani S., Javid Basha Shaik and Ramesh Kumar Vobulapuram

The purpose of this paper is to design novel hardened flip-flop using carbon nanotube field effect transistors (CNTFETs).

Abstract

Purpose

The purpose of this paper is to design novel hardened flip-flop using carbon nanotube field effect transistors (CNTFETs).

Design/methodology/approach

To design the proposed flip-flop, the Schmitt trigger-based soft error masking and unhardened latches have been used. In the proposed design, the novel mechanism, i.e. hysteresis property is used to enhance the hardness of the single event upset.

Findings

To obtain the simulation results, all the proposed circuits are extensively simulated in Hewlett simulation program with integrated circuit emphasis software. Moreover, the results of the proposed latches are compared to the conventional latches to show performance improvements. It is noted that the proposed latch shows the performance improvements up to 25.8%, 51.2% and 17.8%, respectively, in terms of power consumption, area and power delay product compared to the conventional latches. Additionally, it is observed that the simulation result of the proposed flip-flop confirmed the correctness with its respective functions.

Originality/value

The novel hardened flip-flop utilizing ST based SEM latch is presented. This flip-flop is significantly improves the performance and reliability compared to the existing flip-flops.

Details

Circuit World, vol. 47 no. 1
Type: Research Article
ISSN: 0305-6120

Keywords

Article
Publication date: 1 April 1992

HONEYWELL has developed the world's first range of radiation‐hardened LEDs and photodiodes which operate effectively during and after radiation exposure. The components have many…

Abstract

HONEYWELL has developed the world's first range of radiation‐hardened LEDs and photodiodes which operate effectively during and after radiation exposure. The components have many applications for position and object sensing in missiles, aircraft, spacecraft, nuclear installations and hard military environments, where standard components have been rejected due to their low tolerance to radiation effects.

Details

Aircraft Engineering and Aerospace Technology, vol. 64 no. 4
Type: Research Article
ISSN: 0002-2667

Article
Publication date: 2 February 2023

Chunhua Qi, Guoliang Ma, Yanqing Zhang, Tianqi Wang, Erming Rui, Qiang Jiao, Chaoming Liu, Mingxue Huo and Guofu Zhai

The purpose of this paper is to present a transition detector (TD)-based radiation hardened flip-flop (TDRH-FF) for single event upset (SEU).

Abstract

Purpose

The purpose of this paper is to present a transition detector (TD)-based radiation hardened flip-flop (TDRH-FF) for single event upset (SEU).

Design/methodology/approach

With SEU recovery and single event transient (SET) detector mechanism, the TDRH-FF can tolerate SEU during hold mode and generate a warning signal for architecture-level recovery during transport mode when input signal contains SET. Evaluation results show that the TDRH-FF outperforms comparable comprehensive performance.

Findings

Simulation results show that 1) the mean pulse width of the correction glitches (at full width half maximum) of TDRH-FF is less than 10 ps; 2) the area overhead of TDRH-FF is similar to the EVFERST-FF, BISER-FF and DNURHL-FF; 3) TDRH-FF has the same average power consumption as SETTOF, and moderate PDP and Ps values among these compared FFs.

Originality/value

In this paper, a TD-based TDRH-FF is proposed to solve the problems in the previous design. And the main contributions of the proposed TDRH-FF are summarized: Minimum size transistors are used in the proposed TD which leads to a considerable decrease in area overheads and propagation delay (resulting in an ignorable correction glitch); and compared with other radiation hardened flip-flop, TDRH-FF outperforms comparable comprehensive performance.

Details

Microelectronics International, vol. 40 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

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