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This paper aims to propose a new microfluidic portable experimental platform for quick detection of heavy metal ions (HMIs) in picomolar range. The experimental setup uses a microfabricated piezoresistive sensor (MPS) array of eight cantilevers with ion-selective self-assembled monolayer's (SAM).

Most of the components used in this experimental setup are battery operated and, hence, portable to perform the on-field experiments. HMIs (antigen) and thiol-based SAM (antibody) interaction start bending the microcantilever. This results in a change of resistance, which is directly proportional to the surface stress produced due to the mass of targeted HMIs. The authors have used Cysteamine and 4-Mercaptobenzoic acid as a thiol for creating SAM to test the sensitivity and identify the suitable thiol. Some of the cantilevers are blocked using acetyl chloride to use as a reference for error detection.

The portable experimental platform achieves very small detection time of 10-25 min with a lower limit of detection (LOD) 0.762 ng (6.05 pM) for SAM of Cysteamine and 4-Mercaptobenzoic acid to detect Mn2+ ions. This technique has excellent potential and capability to selectively detect Hg2+ ions as low as 2.43 pM/mL using SAM of Homocysteine (Hcys)-Pyridinedicarboxylic acid (PDCA).

As microcantilever is very thin and fragile, it is challenging to apply a surface coating to have selective detection using Nanadispenser. Some of the cantilevers get broken during this process.

The excessive use and commercialization of NPs are quickly expanding their toxic impact on health and the environment. Also, LOD is limited to nanomolar range. The proposed method used the combination of thin-film, NPs, and MEMS-based technology to overcome the limitation of NPs-based technique and have picomolar range of HMIs detection.

The use of conductive yarns or wires to design and construct fabric-based strain sensors is a research area that is gaining much attention in recent years. This is based on a profound theory that conductive yarns will have a variation in resistance if subjected to tension. What is not clear is to which types of conductive yarns are most suited to delivering the right sensitivity. The purpose of this paper is to look at strain sensors knitted with conductive composite and coated yarns which include core spun, blended, coated and commingled yarns. The conductive components are stainless steel and silver coating respectively with polyester as the nonconductive part. Using Stoll CMS 530 flat knitting machine, five samples each were knitted with the mentioned yarn categories using 1×1 rib structure. Sensitivity tests were carried out on the samples. Piezoresistive response of the samples reveals that yarns with heterogeneous external structures showed both an increase and a decrease in resistance, whereas those with homogenous structures responded linearly to stress. Stainless steel based yarns also had higher piezoresistive range compared to the silver-coated ones. However, comparing all the knitted samples, silver-coated yarn (SCY) proved to be more suitable for strain sensor as its response to tension was unidirectional with an appreciable range of change in resistance.

Conductive composite yarns, namely, core spun yarn (CSY1), core spun yarn (CSY2), silver-coated blended yarn (SCBY), staple fiber blended yarn (SFBY) and commingled yarn (CMY) were sourced based on specifications and used to knit strain sensor samples. Electro-mechanical properties were investigated by stretching on a fabric tensile machine to ascertain their suitability for a textile strain sensor.

In order to generate usable signal for a strain sensor for a conductive yarn, it must have persistent and consistent conductive links, both externally and internally. In the case of composite yarns such as SFBY, SCBY and CMY where there were no consistent alignment and inter-yarn contact, resistance change fluctuated. Among all six different types of yarns used, SCY presented the most suitable result as its response to tension was unidirectional with an appreciable range of change in resistance.

This is an original research carried out by the authors who studied the electro-mechanical properties of some composite conductive yarns that have not been studied before in textile strain sensor research. Detailed research methods, results and interpretation of the results have thus been presented.

This paper aims to report an insightful portable microfluidic system for rapid and selective sensing of Hg²⁺ in the picomolar (pM) concentration using microcantilever-based piezoresistive sensor. The detection time for various laboratory-based techniques is generally 12–24 h. The majority of modules used in the proposed platform are battery oriented; therefore, they are portable and handy to carry-out on-field investigations.

In this study, the authors have incorporated the benefit of three technologies, i.e. thin-film, nanoparticles (NPs) and micro-electro-mechanical systems, to selectively capture the Hg²⁺ at the pM concentration. The morphology and topography of the proposed sensor are characterized using field emission scanning electron microscopy and verification of the experimental results using energy dispersive X-ray.

The proposed portable microfluidic system is able to perform the detection in 5 min with a limit of detection (LOD) of 0.163 ng (0.81 pM/mL) for Hg²⁺, which perfectly describes its excellent performance over other reported techniques.

A microcantilever-based technology is perfect for on-site detection, and a LOD of 0.163 ng (0.81 pM/mL) is outstanding compared to other techniques, but the fabrication of microcantilever sensor is complex.

Many researchers used NPs for heavy metal ions sensing, but the excess usage and industrialization of NPs are rapidly expanding harmful consequences on the human life and nature. Also, the LOD of the NPs-based method is limited to nanomolar concentration. The suggested microfluidic system used the benefit of thin-film and microcantilever devices to provide advancement over the NPs-based approach and it has a selective sensing in pM concentration.

The purpose of this paper is to report on a piezoresistive pressure sensor for micro-pressure measurement with a cross-beam membrane (CBM) structure. This study analyzes the dynamic characteristics of the proposed device.

This CBM sensor possesses high stiffness and sensitivity, measuring dynamic pressure more effectively in a high-frequency environment compared with other piezoresistive structures. The dynamic characteristics are derived using the finite element method to analyze the dynamic responses of the new structure, including natural frequency and lateral effect performances. The CBM dynamic performances are compared with traditional structures.

The pressure sensor performance was evaluated, and the experimental results indicate that they all exhibit similar dynamic characteristics as the designed model. Compared with traditional structures such as the single island, the CBM proves to be superior in evaluating the dynamic performances of pressure sensors at high frequencies of > 30 kHz.

Most studies of this micro pressure sensors attempt to promote the sensitivity or focus on the static performance of pressure sensor with micro gauge. This study is concerned with analyze the dynamic characterism of micro pressure sensor and compared with the traditional structures, that prove the CBM structure has stable dynamic performance and is a better option for measuring dynamic micro pressure in biomedical applications.

Structures play a very important role in developing pressure sensors with good sensitivity and linearity, as they undergo deformation to the input pressure and function as the primary sensing element of the sensor. To achieve high sensitivity, thinner diaphragms are required; however, excessively thin diaphragms may induce large deflection and instability, leading to the unfavorable performances of a sensor in terms of linearity and repeatability. Thereby, importance is given to the development of innovative structures that offer good linearity and sensitivity. This paper aims to investigate the sensitivity of a bossed diaphragm coupled fixed guided beam three-dimensional (3D) structure for pressure sensor applications.

The proposed sensor comprises of mainly two sensing elements: the first being the 3D mechanical structure made of bulk silicon consisting of boss square diaphragm along with a fixed guided beam landing on to its center, forming the primary sensing element, and the diffused piezoresistors, which form the secondary sensing element, are embedded in the tensile and compression regions of the fixed guided beam. This micro mechanical 3 D structure is packaged for applying input pressure to the bottom of boss diaphragm. The sensor without pressure load has no deflection of the diaphragm; hence, no strain is observed on the fixed guided beam and also there is no change in the output voltage. When an input pressure P is applied through the pressure port, there is a deformation in the diaphragm causing a deflection, which displaces the mass and the fixed guided beam vertically, causing strain on the fixed guided beam, with tensile strain toward the guided end and compressive strain toward the fixed end of the close magnitudes. The geometrical dimensions of the structure, such as the diaphragm, boss and fixed guided beam, are optimized for linearity and maximum strain for an applied input pressure range of 0 to 10 bar. The structure is also analyzed analytically, numerically and experimentally, and the results are compared.

The structure offers equal magnitudes of tensile and compressive stresses on the surface of the fixed guided beam. It also offers good linearity and sensitivity. The analytical, simulation and experimental studies of this sensor are introduced and the results correlate with each other. Customized process steps are followed wherein two silicon-on-insulator (SOI) wafers are fusion bonded together, with SOI-1 wafer used to realize the diaphragm along with the boss and SOI-2 wafer to realize the fixed guided beam, leading to formation of a 3D structure. The geometrical dimensions of the structure, such as the diaphragm, boss and fixed guided beam, are optimized for linearity and maximum strain for an applied input pressure range of 0 to10 bar.

This paper presents a unique and compact 3D micro-mechanical structure pressure sensor with a rigid center square diaphragm (boss diaphragm) and a fixed guided beam landing at its center, with diffused piezoresistors embedded in the tensile and compression regions of the fixed guided beam. A total of six masks were involved to realize and fabricate the 3D structure and the sensor, which is presumed to be the first of its kind in the fabrication of MEMS-based piezoresistive pressure sensor.

Pressure, being one of the key variables investigated in scientific and engineering research, requires critical and accurate measurement techniques. With the advancements in materials and machining technologies, there is a large leap in the measurement techniques including the development of micro electromechanical systems (MEMS) sensors. These sensors are one to two orders smaller in magnitude than traditional sensors and combine electrical and mechanical components that are fabricated using integrated circuit batch-processing technologies. MEMS are finding enormous applications in many industrial fields ranging from medical to automotive, communication to electronics, chemical to aviation and many more with a potential market of billions of dollars. MEMS pressure sensors are now widely used devices owing to their intrinsic properties of small size, light weight, low cost, ease of batch fabrication and integration with an electronic circuit. This paper aims to identify and analyze the common pressure sensing techniques and discuss their uses and advantages. As per our understanding, usage of MEMS pressure sensors in the aerospace industry is quite limited due to cost constraints and indirect measurement approaches owing to the inability to locate sensors in harsh environments. The purpose of this study is to summarize the published literature for application of MEMS pressure sensors in the said field. Five broad application areas have been investigated including: propulsion/turbomachinery applications, turbulent flow diagnosis, experimentalaerodynamics, micro-flow control and unmanned aerial vehicle (UAV)/micro aerial vehicle (MAV) applications.

The first part of the paper deals with an introduction to MEMS pressure sensors and mathematical relations for its fabrication. The second part covers pressure sensing principles followed by the application of MEMS pressure sensors in five major fields of aerospace industry.

In this paper, various pressure sensing principles in MEMS and applications of MEMS technology in the aerospace industry have been reviewed. Five application fields have been investigated including: Propulsion/Turbomachinery applications, turbulent flow diagnosis, experimental aerodynamics, micro-flow control and UAV/MAV applications. Applications of MEMS sensors in the aerospace industry are quite limited due to requirements of very high accuracy, high reliability and harsh environment survivability. However, the potential for growth of this technology is foreseen due to inherent features of MEMS sensors’ being light weight, low cost, ease of batch fabrication and capability of integration with electric circuits. All these advantages are very relevant to the aerospace industry. This work is an endeavor to present a comprehensive review of such MEMS pressure sensors, which are used in the aerospace industry and have been reported in recent literature.

As per the author’s understanding, usage of MEMS pressure sensors in the aerospace industry is quite limited due to cost constraints and indirect measurement approaches owing to the inability to locate sensors in harsh environments. Present work is a prime effort in summarizing the published literature for application of MEMS pressure sensors in the said field. Five broad application areas have been investigated including: propulsion/turbomachinery applications, turbulent flow diagnosis, experimental aerodynamics, micro-flow control and UAV/MAV applications.

The purpose of this paper is to provide a thin tactile force sensor array based on conductive rubber and to offer descriptions of the sensor design, fabrication and test.

The sensor array consists of a sandwich structure. Sensing elements are distributed discretely in the sensor. Each sensing element has two electrodes and a piece of conductive rubber with piezoresistive property. The electrodes, as well as the conductive trace for signal transmission, are printed on the substrate layer by the screen printing technique. A scanning circuit based on zero potential method and an experimental set‐up based on balance to characterize the sensor array are designed and implemented in the test of the sensor array.

Experimental results verify the validity of the sensor array in measuring the vertical tactile force between the sensing elements and the object.

In this paper, all the sensors are tested without calibration procedures and the procedure of the dynamic test is implemented by manual operation.

The sensor array could be applied to measure the plantar force for gait detection in clinical applications.

The paper presents a tactile force sensor array with discrete sensing elements to essentially restrict the cross‐talk among sensing elements. This paper will provide many practical details that can help others in the field.

This paper aims to describe the fabrication, packaging and testing of a resistive loaded p-channel metal-oxide-semiconductor field-effect transistor-based (MOSFET-based) current mirror-integrated pressure transducer.

Using the concept of piezoresistive effect in a MOSFET, three identical p-channel MOSFETs connected in current mirror configuration have been designed and fabricated using the standard polysilicon gate process and microelectromechanical system (MEMS) techniques for pressure sensing application. The channel length and width of the p-channel MOSFETs are 100 µm and 500 µm, respectively. The MOSFET M1 of the current mirror is the reference transistor that acts as the constant current source. MOSFETs M2 and M3 are the pressure-sensing transistors embedded on the diaphragm near the mid of fixed edge and at the center of the square diaphragm, respectively, to experience both the tensile and compressive stress developed due to externally applied input pressure. A flexible square diaphragm having a length of approximately 1,000 µm and thickness of 50 µm has been realized using deep-reactive ion etching of silicon on the backside of the wafer. Then, the fabricated sensor chip has been diced and mounted on a TO8 header for the testing with pressure.

The experimental result of the pressure sensor chip shows a sensitivity of approximately 0.2162 mV/psi (31.35 mV/MPa) for an input pressure of 0-100 psi. The output response shows a good linearity and very low-pressure hysteresis. In addition, the pressure-sensing structure has been simulated using the parameters of the fabricated pressure sensor and from the simulation result a pressure sensitivity of approximately 0.2283 mV/psi (33.11 mV/MPa) has been observed for input pressure ranging from 0 to 100 psi with a step size of 10 psi. The simulated and experimentally tested pressure sensitivities of the pressure sensor are in close agreement with each other.

This current mirror readout circuit-based MEMS pressure sensor is new and fully compatible to standard CMOS processes and has a promising application in the development CMOS-MEMS-integrated smart sensors.

In this paper, a new flexible piezoresistive pressure sensor which uses non-woven fabric as the flexible substrate and sliver nanowires (AgNWs) as the conductive materials was reported.

The compression test of the pressure sensors was carried out at different compression frequencies and found that the sensors had more than 5,000 times reusability at high frequency.

When pressure sensors were applied to different parts of the human body, such as fingers, elbows, knees and throat, the sensors respond differently to different degrees of movement.

The proposed pressure sensor has broad application prospects in the human motion detection.

The purpose of this study is to develop a piezoresistive absolute micro-pressure sensor for altimetry. For this application, both high sensitivity and high overload resistance are required. To develop a piezoresistive absolute micro-pressure sensor for altimetry, both high sensitivity and high-overload resistance are required. The structure design and optimization are critical for achieving the purpose. Besides, the study of dynamic performances is important for providing a solution to improve the accuracy under vibration environments.

An improved structure is studied through incorporating sensitive beams into the twin-island-diaphragm structure. Equations about surface stress and deflection of the sensor are established by multivariate fittings based on the ANSYS simulation results. Structure dimensions are determined by MATLAB optimization. The silicon bulk micromachining technology is utilized to fabricate the sensor prototype. The performances under both static and dynamic conditions are tested.

Compared with flat diaphragm and twin-island-diaphragm structures, the sensor features a relatively high sensitivity with the capacity of suffering atmosphere due to the introduction of sensitive beams and the optimization method used.

An improved sensor prototype is raised and optimized for achieving the high sensitivity and the capacity of suffering atmosphere simultaneously. A general optimization method is proposed based on the multivariate fitting results. To simplify the calculation, a method to linearize the nonlinear fitting and optimization problems is presented. Moreover, a differential readout scheme attempting to decrease the dynamic interference is designed.