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In this work the experimental effect of a slow decay of the photoluminescence is studied theoretically in the case of quantum dots with an indirect energy band gap. The slow decay of the photoluminescence is considered as decay in time of the luminescence intensity, following the excitation of the quantum dot sample electronic system by a short optical pulse. In the presented theoretical treatment the process is studied as a single dot property. The inter-valley deformation potential interaction of the excited conduction band electrons with lattice vibrations is considered in the self-consistent Born approximation to the electronic self-energy. The theory is built on the non-equilibrium electronic quantum transport theory. The time dependence of the photoluminescence decay is estimated upon using a simple effective mass model. The numerical calculation of the considered model shows the power-law time characteristics of the photoluminescence decay in the long-time limit of the decay. We demonstrate that the nonadiabatic influence of the interaction of the conduction band electrons with the lattice vibrations provides a mechanism giving us the power-law time dependence of the photoluminescence intensity signal. This theoretical result emphasizes the role of the electron-phonon interaction in the nanostructures.

There is a strong inducement to develop new inorganic materials to substitute the current industrial pigments, which are known for their poor ultraviolet absorbent and low photoluminescence (PL) properties. The purpose of this paper is to invent a better rare-earth-based pigment material as a spectral modifier with good luminescence properties to enhance the spectral response for photovoltaic panel application.

Different phosphor samples made of nano-calcium carbonate (CaCO₃) with varied wt.% of the dopant Dysprosium doped calcium borophosphate (CBP/Dy) as (W0 – 0%, W1 – 3,85%, W2 – 7.41%, W3 –10.71% and W4 –13.79%) were prepared via the solid-state diffusion method at 600 °C for 6 h using a muffle furnace. The structural, morphological and luminescence properties of the CaCO₃:CBP/Dy powder samples were examined using scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and PL test.

The XRD, SEM and FTIR results verified the crystalline formation, morphological behaviour and vibration bonds of synthesized CBP/Dy-doped CaCO₃ powder samples. XRD pattern revealed that the synthesized powder samples exhibit crystalline structured materials, and SEM results showed irregular shape and porous-like structured morphologies. FTIR spectrum shows prominent bands at 712, 874 and 1,404 cm⁻¹, corresponding to asymmetric stretching vibrations of CO3²⁻ groups and out-of-plane bending. PL characterization of CBP/Dy-doped CaCO₃ (sample W) shows emission at 427 nm (λmax) under the excitation of 358 nm. The intensity of PL emission spectra drops due to the concentration quenching effect, while the maximum PL intensity is observed in the W3 phosphor powder system.

This phosphor powder is expected to find out the potential application such as a spectral modifier which is applied to match the energy of photons with solar cell bandgap to improve spectral absorption and lead to better efficiency.

The introduction of a nano-CaCO₃:CBP/Dy hybrid powder system with good luminescence properties to be used as spectral modifiers for solar cell application has been synthesized in the lab, which is a novel attempt.

The purpose of this paper is to synthesize Si (porous silicon (PS)) by laser‐induced etching (LIE) technique. The LIE process has the added advantage of a controlling size and optical properties without using of electrodes. The LIE process is a promising technique for fabricating many optoelectronic devices including: light‐emitting devices, detectors, sensors and large‐scale integrated circuits.

PS has been fabricated by LIE technique. Surface morphology and structural properties of nanostructures are characterized by using scanning electron microscopy and X‐ray diffraction (XRD). Photoluminescence (PL) measurement is also performed at room temperature by using He‐Cd laser (λ=325 nm) and Raman scattering has been investigated using Ar⁺ laser (λ=514 nm).

Surface morphology indicated that chemical reaction has been initiated with laser power density of 12 W/cm², resulting in irregular structure. Micro‐columns are structured on surface with laser power density of 25 W/cm². The pores structures are confined to smaller size, and the walls between the pore become extremely thin and shorter at 64 W/cm² power density and 120 min irradiation time. PL spectra at room temperature for PS prepared at power density of 64 W/cm² and irradiation time of 120 min shows the blue shift of PL at 400 nm and the full‐width and half maximum is about 60 nm. The broadening of the band gap energy occurs with a decrease of the crystallite size. The average diameter of nanosize Si crystallites is about 6‐10 nm. XRD indicated that the broadening in spectrum is due to the small size crystallites.

LIE processes have been used to produce high‐luminescent nanocrystallites with small size and size distribution, which is due to the quantum confinement effect.

The purpose of this paper is to study the structural and optical characterization of Al_x In_y Ga_1−x−y N quaternary epilayers, which were grown on c‐plane (0001) sapphire substrates with AlN as buffer layers using plasma assisted molecular beam epitaxy technique with indium (In) mole fraction y ranging from 0.0 to 0.1 and constant aluminum (Al) mole fraction x=0.06.

High‐resolution X‐ray diffraction rocking curve (HRXRD‐RC), scanning electron microscopy (SEM), energy dispersive X‐ray spectrometry (EDX), and photoluminescence (PL) spectroscopy have been measured on quaternary Al_x In_y Ga_1−x−y N thin films at room temperature.

HRXRD‐RC measurements confirmed that the Al_x In_y Ga_1−x−y N alloys had wurtzite structure. SEM images, element composition analysis by EDX, provided the evidence to show the existence of defects inside the samples contaminated by silicon from previous growth leading to nonuniformity of the epilayers, which caused decreased in the quality of the samples. PL spectra show reducing of the integrated intensity and an increasing red shift with increasing in content with reference to the ternary sample Al_0.06Ga_0.94N. The existence of a large amount of nonradiative recombination centers are responsible for the reduced the luminescence and the red shift provided evidence to an increase in composition inside the Al_x In_y Ga_1−x−y N quaternary alloys. Photoluminescence is used to determine the behavior of the near band edge emission represent the energy band gap of the quaternary films. The energy band gap decreases with increasing In composition from 0.01 to 0.1 mole fraction. This trend is expected since the incorporation of in reduced the energy band gap of ternary Al_0.06Ga_0.94N (3.529 eV). We have also investigated the bowing parameter of the variation of energy band gaps and found it to be very sensitive on in composition. A value of b=10.95 have been obtain for our quaternary Al_x In_y Ga_1−x−y N alloys.

This study on quaternary samples described in this paper, clearly indicates that the present of defects due to impurity contaminations has a dominant role in determining the structural and optical properties of Al_x In_y Ga_1−x−y N quaternary alloys.

Porous silicon (PS) was successfully fabricated using an alternating current photo-assisted electrochemical etching (ACPEC) technique. This study aims to compare the effect of different crystal orientation of Si n(100) and n(111) on the structural and optical characteristics of the PS.

PS was fabricated using ACPEC etching with a current density of J = 10 mA/cm² and etching time of 30 min. The PS samples denoted by PS₁₀₀ and PS₁₁₁ were etched using HF-based solution under the illumination of an incandescent white light.

FESEM images showed that the porous structure of PS₁₀₀ was a uniform circular shape with higher density and porosity than PS₁₁₁. In addition, the AFM indicated that the surface roughness of porous n(100) was less than porous n(111). Raman spectra of the PS samples showed a stronger peak with FWHM of 4.211 cm⁻¹ and redshift of 1.093 cm⁻¹. High resolution X-ray diffraction revealed cubic Si phases in the PS samples with tensile strain for porous n(100) and compressive strain for porous n(111). Photoluminescence observation of porous n(100) and porous n(111) displayed significant visible emissions at 651.97 nm (Eg = 190eV) and 640.89 nm (Eg = 1.93 eV) which was because of the nano-structure size of silicon through the quantum confinement effect. The size of Si nanostructures was approximately 8 nm from a quantized state effective mass theory.

The work presented crystal orientation dependence of Si n(100) and n(111) for the formation of uniform and denser PS using new ACPEC technique for potential visible optoelectronic application. The ACPEC technique has effectively formed good structural and optical characteristics of PS.

Zinc oxide (ZnO) is an emerging optoelectronic material due to its various functional behaviors. The purpose of this paper is to report on the fabrication and characterizations of ZnO microrods.

ZnO microrods were synthesized using sol‐gel immerse technique on oxidized silicon (Si) substrates. The oxidized Si substrates were immersed in ZnO aqueous solution for different times ranging from three to five hours. The surface morphologies of the ZnO microrods were examined using scanning electron microscope (SEM). In order to investigate the structural properties, the ZnO microrods were measured using an X‐ray diffractometer (XRD). The optical properties were measured using a photoluminescence (PL) spectrophotometer.

Characterization from SEM shows an enhanced growth of the ZnO rods with increasing immerse time. XRD characterizations demonstrate sharp and narrow diffraction peaks peculiar to ZnO, which implies that the rod is of high crystallinity. Based on the PL spectra, long immerse time results in the high peak in the UV region.

This paper concludes that the immerse time exerts an influence on the ZnO microrods. A longer immerse duration is preferred in the fabrication of the ZnO microrod, which is considered an emerging material for many advanced electronic and optoelectronic applications.

The purpose of this paper is to describe how fabricate solar cell based‐on porous silicon (PS) prepared by electrochemical etching process is fabricated and the effect of porosity layer on the solar cell performance is investigated.

The techniques used include SiO₂ thermal oxidation, ZnO/TiO₂ sputtering deposition and PS prepared by electrochemical etching. Surface morphology and structural properties of porous Si were characterized by using scanning electron microscopy. Photoluminescence and Raman spectroscopy measurements were also performed at room temperature. Current‐voltage measurements of the fabricated solar cell were taken under 80 mW/cm² illumination conditions. Optical reflectance was obtained by using optical reflectometer (Filmetrics‐F20).

Pore diameter and microstructure are dependent on anodization condition such as HF: ethanol concentration, duration time, temperature, and current density. On other hand, a much more homogeneous and uniform distribution of pores is obtained when compared with other wafer prepared with different electrolyte composition.

PS is found to be an excellent anti‐reflection coating against incident light when it is compared with another anti‐reflection coating and exhibits good light‐trapping of a wide wavelength spectrum which produce high efficiency solar cells (11.23 per cent).

This paper aimed to prepare a kind of ZnS nanoparticles/poly(phenylene vinylene) (PPV) nanofibre and investigate its properties. Because the ZnS nanoparticles are important optoelectronic materials, their incorporation into one-dimensional (1D) nanoscale polymer matrices should be a meaningful subject for electrospinning.

ZnS/PPV composite nanofibres with an average diameter of 600 nm were successfully prepared by a combination of the in situ method and electrospinning technique. The nanofibres were electrospun from Zn(CH3COO)2·2H2O and PPV precursor composite solution, and the ZnS/PPV fibres were obtained by exposure of the electrospun fibres to H₂S gas to prepare ZnS nanoparticles in situ. Such fibres were characterised using X-ray Diffraction (XRD), Fourier transform infrared, transmission electron microscope (TEM), scanning electron microscope and photoluminescence (PL). The photoelectric properties of the fibres obtained were also investigated.

XRD patterns proved that ZnS nanocrystals generated in the composite nanofibres. The TEM image showed that the nanocrystals were homogeneously dispersed in the nanofibres. The PL spectrum of ZnS/PPV composite nanofibres exhibited a blue shift relative to the PPV nanofibres. I-V curve of the single nanofibre device under 5.76 mW/cm2 light illumination showed that the composite nanofibres have good photoelectric properties.

The comparisons of advantages between ZnS/PPV nanofibres with similar nanofibres will be further expanded in a later research.

Results demonstrate the promise of these novel nanostructures as ultraminiature photodetectors with the potential for integration into future hybrid nanophotonic devices and systems.

The integration of inorganic semiconductor nanoparticles into organic conjugated polymers leads to composite materials with unique physical properties and important application potential. In this work, ZnS nanoparticles were introduced into PPV by an in situ method, so as to obtain a kind of novel 1D nanomaterials with good photoelectric properties.

The purpose of this paper is to propose a simple physical evaporation route in which catalyst‐free zinc oxide (ZnO) nanoscrewdrivers were deposited on silicon (Si) (111) substrates.

Prior to the deposition, the Si (111) wafer was cut into pieces of 2×2 cm². Then, the wafers were dipped for 1 min into mixture buffered oxide etchant to remove native oxide. Then, the samples were rinsed in an ultrasonic bath cleaned with boiling acetone, ethanol, and de‐ionized (DI) water for 10 min. Lastly, the wafers were rinsed in 25 ml DI water in stirred and then were blown dry with nitrogen. In this technique, the starting material is high‐purity metallic zinc (Zn) powder (99.99 per cent pure). Following, the Zn films were then annealed under air environment in the furnace at 500°C for 1 h deprived of any catalysts.

These ZnO samples were studied by scanning electron microscopy, high‐resolution X‐ray diffraction (HR‐XRD), and photoluminescence (PL) spectroscopy. Atomic force microscope (AFM) images were applied to ascertain surface morphology of produced ZnO nanoscrewdrivers. XRD pattern confirmed that the ZnO nanoscrewdrivers were of polycrystalline structure in universe with a hexagonal close packed type and c‐axis is perpendicular to the substrate. The peak at 34° correspond to the reflection planes of ZnO(002) crystallographic plane is perceived. The AFM surface images disclosed that the surfaces of produced ZnO thin films are not smooth. The PL spectrum of as‐synthesized nanoscrewdrivers shows a UV emission peak at 380 nm and a broad green emission peak at 500 nm.

The paper reports on a simple physical evaporation route, ZnO nanoscrewdrivers were synthesized via the thermal evaporation of the high‐purity Zn powders and annealed at 500°C under air atmosphere without introducing any hetero‐metal catalysts or other carrier gases approach.

The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si) substrate that was prepared by a low-cost method (drop-casting technique).

The drop-casting method was used for the seed layer deposition, the hydrothermal method was used for the growth of ZnO NRs and subsequent fabrication of UV MSM photodetector was done using the direct current sputtering technique. The performance of the fabricated MSM devices was investigated by current–voltage (I–V) measurements. The photodetection mechanism of the fabricated device was discussed.

Semi-vertically high-density ZnO (NRs) were effectively produced with a preferential orientation along the (002) direction, and increased crystallinity is confirmed by X-ray diffraction analysis. Photoluminescence results show a high UV region. The fabricated MSM UV photodetector showed that the ZnO (NRs) MSM device has great stability over time, high photocurrent, good sensitivity and high responsivity under 365 nm wavelength illumination and 0 V, 1 V, 2 V and 3 V applied bias. The responsivity and sensitivity for the fabricated ZnO NRs UV photodetector are 0.015 A W-1, 0.383 A W-1, 1.290 A W-1 and 1.982 A W-1 and 15,030, 42.639, 100.173 and 334.029, respectively, under UV light (365 nm) illumination at (0 V, 1 V, 2 V and 3 V).

This paper uses the drop-casting technique and the hydrothermal method as simple and low-cost methods to fabricate and improve the ZnO NRs photodetector.