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This article shows that irradiation with neutrons can be used as solution to harden commercial (COTS: Commercial‐Off‐The‐Shelf) n‐channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices against destructive events induced by heavy ion irradiation. Atomic displacements created in silicon, by neutron irradiations, result in traps and recombination centers which reduce the electron‐hole pairs density generated by the heavy ion within the device. These results highlight a strong reduction in the photo‐current generated by the heavy ion, correlated with a reduction of the carrier lifetime.

This work aims to investigate the modifications in a transistor behavior after hot carrier injection processes from the integrated junction.

A high voltage is applied across the drain‐source contacts, so a reverse current is induced through the integrated junction and defects are then created.

The results point out to a dependence of the VDMOSFET reliability on the operating conditions which could induce parasitic effects on the structure. Induced defects alter the form of several MOSFET characteristics.

A new method of degradation is presented along with a series of characterization techniques‐based electrical parameters variations.

The purpose of this work is to highlight the evolutions of the switching times parameters of commercial vertical diffuse metal oxide semiconductor field effect transistors after a hot carrier injection in the reverse bias pn junction.

Experiment was done basically by hot carrier injection, where a large drain‐source voltage V_DS is applied to reverse bias the body drain junction, then inducing a 30 mA reverse current. The drain polarization was increased gradually, by steps of 0.5 V/s, up to desired V_DS value in order to prevent sudden breakdown. Switching time parameters were measured at different temperatures and up to 300°C.

The experimental results show that the device rise time decreases significantly for the first period of stress time at room temperature, which increases the speed of the device during this turn‐on switch. This event was associated with the high‐electric field in the junction region that pulls electrons from the oxide gate into the channel, thus leaving trapped holes in the oxide bulk due to their low mobility.

This research study has an important value in terms of engineering application where speed of electronic devices is one of the most valuable parameters in the communication and information technology fields.

The present experiments are intended to help characterize defects in very thin MOS oxide and at its Si/SiO₂ interface using a temperature‐dependent electrical characterization method, high low temperature capacitance voltage method and, especially, to investigate high temperature range. Oxide‐fixed traps are differentiated from slow‐state traps and from fast‐state traps by evaluating their electrical behaviour at different temperatures. The analysis points out the excess current after Fowler Nordheim electron injection based on hole generation, trapping, and hopping transport at high temperatures. The defect relaxation property versus temperature is investigated and defect relaxation activation energies are calculated. Creation mechanisms of interface states are especially identified by injection at different temperatures and these are compared with the other two kinds of defects. Fast‐state traps and all defect cross‐sections are calculated along and their creation activation energies are determined from Arrhenius plots.

Developments in neutron detection technology during the past three years are reviewed with special emphasis on application to safety, security, or industrial development.An investigation about the possibility of using N‐channel power MOSFET (metal oxide semiconductor field effect transistor) as a high‐energy neutron sensitive detector is presented here. An empirical expression for neutron fluence detection is derived from the relation between neutron fluence and the evolution of the transistor current measured in the saturation region. This expression is valid for neutron fluence in the range 5×10⁹–1×10¹⁴ n cm⁻².

This paper presents measurements of device switching parameters performed on a commercial power MOSFET under high temperature conditions, along with the inverse and direct source‐drain current.

Device temperature was linearly increased from 20 to 300°C. Switching times were measured by monitoring the current waveforms when the device was turned off and on. The gate was biased by a 10 V square signal while a 50 V DC bias was applied between the drain and source. The inverse current was measured under Vg=0V.

The device response to being turned off becomes faster at high temperatures. The inverse leakage current is insignificant under 300°C but it increases rapidly after this limit. The direct saturation current increases with temperature for the same gate tension. These phenomena were associated to the thermal activation of defects.

This paper offers information about switching performance of low cost commercial MOS devices in high temperature conditions. This information is essential in the microelectronic industry of harsh environments.

The aim of this paper is to provide some specific information on the effects of DC voltage stress on the current, rise time (Tr) and fall time (Tf), at switching between on and off state of power n‐MOSFET devices.

A constant positive electrical stress voltage technique is used to study the devices in this work by giving the gate a positively bias with respect to source and a short circuit of the drain with the grounded source. Voltage stress is gradually increased by automatic 1 V step until it reaches the max tolerated value by the gate dielectric (70 V for device studied in this paper). Response of the device for electrical stress was measured for different doses (stress time).

The experimental results show that the rise time increases the beginning of stress dose and then it almost stabilises with time, while fall time decreases at first and then starts to increase for higher stress time. The modification of the device switching time parameters were associated to positive oxide charge and interface state Si/SiO₂ effects.

This paper offers new information concerning a very important field in microelectronic devices where the switching speed of the components becomes a major requirement. The technique used to improve the device speed has a very low cost and a simple feasibility.

The purpose of this paper is to identify the factors influencing farmers’ intention to purchase solar water pumping systems (SWPS).

The research is based on primary data that have been collected from a total of 345 solar pump users from different villages and rural areas of Punjab (India). Exploratory and confirmatory factor analysis and multiple regression analysis have been used to examine the collected data. Multiple regression analysis is used to examine the identified dimensions’ impact on customer buying behaviour.

The results of analysis validated that consumer buying behaviour is significantly determined by cost, performance and government initiatives dimensions. However, dimensions such as eco-friendly product, information regarding product and company, environmental concern and social influence were found insignificant.

The sample size has been selected on the basis of convenience sampling and sample has been taken from the rural area. Therefore, the result may not be representative of the overall population. The perception of respondents from one part may vary from another part of India.

By providing an insight into factors affecting consumer buying behaviour of SWPS, the proposed research attempts to fill the gaps in literature by conducting an empirical study on consumer buying behaviour. As the study relates to SWPS users, findings will be of additional value to solar product companies and the government.

The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.

The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.

The temperature dependence of these parameters is investigated; their evolution allows the evaluation of device's operation reliability in high‐temperature environments.

The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.

The purpose of this paper is to propose a time‐dependent mobility degradation model which is independent from the process or operating conditions.

In total, four transistors under test are electrically stressed using constant positive electrical stress voltage technique with the gate bias of V_G=40 V DC, where the source and drain were grounded. The authors increased the stress voltage step by step to avoid electrostatic discharge and recorded the I_D‐V_DS and I_D‐V_GS measurements in time intervals during the stress.

The experimental results show that the output current and the threshold voltage of the transistor are increased after the stress. Mobility and channel length are decreased. The changes in the transistor parameters were associated to interface state Si/SiO₂ effects. The authors used the physical changes in transistor and proposed a new‐time dependent mobility degradation model. The mobility change was calculated using the proposed model and compared with the experimental results. It was seen that the calculated and experimental results are in good agreement.

This is an original research paper and enables the mobility degradation to be predicted independently from effects of process or operational changes such as oxide thickness, substrate doping, and applied voltages on transistor.