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The purpose of this paper is to synthesize Si (porous silicon (PS)) by laser‐induced etching (LIE) technique. The LIE process has the added advantage of a controlling size and optical properties without using of electrodes. The LIE process is a promising technique for fabricating many optoelectronic devices including: light‐emitting devices, detectors, sensors and large‐scale integrated circuits.

PS has been fabricated by LIE technique. Surface morphology and structural properties of nanostructures are characterized by using scanning electron microscopy and X‐ray diffraction (XRD). Photoluminescence (PL) measurement is also performed at room temperature by using He‐Cd laser (λ=325 nm) and Raman scattering has been investigated using Ar⁺ laser (λ=514 nm).

Surface morphology indicated that chemical reaction has been initiated with laser power density of 12 W/cm², resulting in irregular structure. Micro‐columns are structured on surface with laser power density of 25 W/cm². The pores structures are confined to smaller size, and the walls between the pore become extremely thin and shorter at 64 W/cm² power density and 120 min irradiation time. PL spectra at room temperature for PS prepared at power density of 64 W/cm² and irradiation time of 120 min shows the blue shift of PL at 400 nm and the full‐width and half maximum is about 60 nm. The broadening of the band gap energy occurs with a decrease of the crystallite size. The average diameter of nanosize Si crystallites is about 6‐10 nm. XRD indicated that the broadening in spectrum is due to the small size crystallites.

LIE processes have been used to produce high‐luminescent nanocrystallites with small size and size distribution, which is due to the quantum confinement effect.

The purpose of this paper is to describe a strap‐down image stable strategy for multi‐load optoelectronic imaging platform hung below a tethered aerostat.

Four two dimension pods, each with a visible light camera, are fixed on the optoelectronic platform. A POS (Position and Orientation System) is used to acquire the attitude rate data of optoelectronic platform, while the data can be coupled to the pods' servo systems through corresponding coordinate rotation, then the motors of pods will adjust the line of sight to the opposite way to keep the stabilization of image exported by visible light camcorders. Simultaneously, two rate gyros are installed at the inner frame of each pod, which are used as a backup to avoid the failure of POS.

Using one attitude and position measurement system can realize the stabilization of multi optoelectronic pods, which is same as or even better than the ratio gyro stabilization.

As the tethered aerostat is a flexible body, it is affected a lot by the wind speed and wind direction at the low height (<1,000 m), which leads to the motors of pods always adjust the line of sight to the mechanical limiting of pods.

Strap‐down stabilization technology has been successfully used in the tethered aerostat monitoring platform to surveillance Shanghai World EXPO site. Long time experiments verify the feasible and effective of the multi‐load stabilization technology. The impact on the image by the adjustment of servos is less than 10 percent of the whole view of sight.

The paper introduces a strap‐down stabilization technology for multi‐load tethered aerostat platform, which is more suitable to be applied in the platform of relatively minor attitude change, like the airborne multi‐load platform and multi‐load UAV (unmanned aerial vehicle) platform.

The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED).

InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition.

The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824.

This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

In this contribution, the aim is to present a nanoparticle device, operating in the visible regime based on the localized surface plasmon resonance (LSPR) phenomenon.

The nanoparticle electromagnetic properties are evaluated by a new analytical model and compared to the results obtained by numerical analysis.

A near-field enhancement is obtained by arranging the nanoparticles in a linear array. Analytical formulas, describing such enhancement, are presented.

The results demonstrate the possibility to use the proposed device for medical diagnostics and optoelectronics applications.

The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si) substrate that was prepared by a low-cost method (drop-casting technique).

The drop-casting method was used for the seed layer deposition, the hydrothermal method was used for the growth of ZnO NRs and subsequent fabrication of UV MSM photodetector was done using the direct current sputtering technique. The performance of the fabricated MSM devices was investigated by current–voltage (I–V) measurements. The photodetection mechanism of the fabricated device was discussed.

Semi-vertically high-density ZnO (NRs) were effectively produced with a preferential orientation along the (002) direction, and increased crystallinity is confirmed by X-ray diffraction analysis. Photoluminescence results show a high UV region. The fabricated MSM UV photodetector showed that the ZnO (NRs) MSM device has great stability over time, high photocurrent, good sensitivity and high responsivity under 365 nm wavelength illumination and 0 V, 1 V, 2 V and 3 V applied bias. The responsivity and sensitivity for the fabricated ZnO NRs UV photodetector are 0.015 A W-1, 0.383 A W-1, 1.290 A W-1 and 1.982 A W-1 and 15,030, 42.639, 100.173 and 334.029, respectively, under UV light (365 nm) illumination at (0 V, 1 V, 2 V and 3 V).

This paper uses the drop-casting technique and the hydrothermal method as simple and low-cost methods to fabricate and improve the ZnO NRs photodetector.

From when we, as humans, first lashed a pointed stone to a split straight stick to make a more effective spear for hunting to now when we fasten and bond ablative ceramic tiles to the frail metal skin of the Space Shuttle to allow safe re‐entry from manned excursions into space, joining has been a pragmatic, albeit critically important, fabrication process. As we move beyond the Industrial Age to the ages of Information Technology, Nanotechnology, and Biotechnology, joining must move from a secondary process for manufacturing objects or articles from pre‐synthesized and pre‐shaped materials to a primary process for combining materials into fundamental structures as these structures and even materials are being synthesized; where the boundary between the materials and the structure becomes blurred. This paper attempts to catch a glimpse of the future where joining comes of age to become an enabling technology practiced as much or more by technicians or physicians than as a trade practiced by helmeted welders or hard‐hatted riveters.

This study aims to investigate photosensing characteristics of SiC and GaN nanowire-based devices through exposure to UV light. The photocurrent transients have been modeled to determine rise and decay process time constants. The 1D-semiconductor nanowires can exhibit higher light sensitivity compared to bulk materials because of their large surface area to volume ratio and the quantum size effects.

Nanowire devices have been fabricated through dielectrophoresis for integrating nanowires onto pre-patterned electrodes (10 nm Ti/ 90 nm Au) with a spacing about 3 µm onto SiO₂/Si (doped) substrate. The photocurrent measurements were carried out under room temperature conditions with UV light of 254 nm wavelength.

SiCNWs yield very short rise and decay time constants of 1.3 and 2.35 s, respectively. This fast response indicates an enhanced surface recombination of photoexcited electron-hole pairs. Conversely, GaNNWs yield longer rise and decay time constants of 10.3 and 15.4 s, respectively. This persistent photocurrent suggests a reduced surface recombination process for the GaNNWs.

High selective UV light sensitivity, small size, very short response time, low power consumption and high efficiency are the most important features of nanowire-based devices for new and superior applications in photodetectors, photovoltaics, optical switches, image sensors and biological and chemical sensing.

The realization of thick‐film circuits on glass substrates is discussed. Within the large number of commercially available thick‐film pastes, suitable pastes for thick‐film conductors, resistors and dielectrics on glass substrates have been found. Experimental results for these pastes are presented. Finally two applications for thick‐film on glass technology are demonstrated.