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This study investigates the impact and economic viability of energy-efficient building envelope and orientation for contributing net zero energy building (NZEB) and…
This study investigates the impact and economic viability of energy-efficient building envelope and orientation for contributing net zero energy building (NZEB) and suggests optimum thermal insulation thickness, optimum wall thickness, appropriate orientation and glazing types of window in the contexts of unique Bangladeshi subtropical monsoon climate.
The whole study was conducted through energy simulation perspective of an existing office building using building information modeling (BIM) and building energy modeling (BEM) tools which are Autodesk Revit 2017, Autodesk Green Building Studio (GBS) and eQUEST. Numerous simulation patterns were created for energy simulation considering building envelope parameters and orientations. A comprehensive data analysis of simulation results was conducted to sort out efficient passive design strategies.
The optimum thermal mass and thermal insulation thickness are 6.5 and 0.5 inches, respectively, considering energy performance and economic viability. This study highly recommends that a building should be designed with a small window-to-wall ratio in the south and west face. The window should be constructed with double glazing Low-E materials to reduce solar heat gain. The studied building saves 9.14% annual energy consumption by incorporating the suggested passive design strategies of this study.
The output of this work can add some new energy-efficient design strategies to Bangladesh National Building Code (BNBC) because BNBC has not suggested any codes or regulations regarding energy-efficient passive design strategies. It will also be useful to designers of Bangladesh and other countries with similar subtropical climatic contexts which are located in Southeast Asia and Northern Hemisphere of Earth.
The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial…
The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl- and HF-last Ge surface.
After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.
It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.
The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.