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Nanowires, nanostructures with the diameter of the order of a nanometer, have recently attracted as gas sensors because of their interesting properties such as high sensitivity, fast response and high selectivity and stability. Among the different types of gas sensors, metallic nanowires used in high frequency applications because of their long mean free path that make the conduction ballistic.

This paper presents the results of simulations to find the effects of adsorbing some molecules by silver Ag nanowires. The mechanisms of the simulated gas sensor are implemented in the Atomistix Toolkit 13.2 (ATK 13.2).

The simulation results show high sensitivity of silver nanowires in adjacent with water and ethane. The resistance of the simulated nanowire increased to about 3.65 kΩ for ethane and 4.95 kΩ for water molecules. This result shows that the sensitivity of a silver nanowire is about triple for the case of adsorbing water in comparison to the adsorption of ethane molecules.

This paper presents a simulation study on silver nanowires and compares their sensitivities in adjacent with water and ethane molecules.

The purpose of this paper is to arrange zinc oxide (ZnO) nanowires into an appropriate position on electrodes and to research the properties of ZnO nanowires.

In this paper, dielectrophoresis (DEP) was used to fabricate ZnO nanowire devices, and the responses to temperature, ultraviolet (UV) light and breath of the device were studied.

The number of the bridged nanowires is increased with alternating current voltage. ZnO nanowires demonstrate a good photoconductivity illuminated by 365-nm UV light, and show a stable performance in monitoring unnatural breath of high frequency and low strength.

In this paper, DEP is a promising method for controllable assembly of ZnO nanowires. ZnO nanowires demonstrate a good response to 365-nm UV light and exhaled breath, which show great potential application in UV detector and medical monitor.

The purpose of this paper is to explore and evaluate the performance comparison of carbon nanotubes (CNT) and nickel silicide (NiSi) nanowires interconnects as prospective alternatives to copper wire interconnects.

The increasing resistivity of the copper wire with scaling and rising demands on current density drives the need for identifying new wiring solutions. This paper explores the various alternatives to copper. The metallic bundle CNTs and NiSi nanowires are promising candidates that can potentially address the challenges faced by copper. This paper analyzes various electrical models of carbon nanotube and recently introduced novel interconnect solution using NiSi nanowires.

The theoretical studies proves CNTs and NiSi nanowires to be better alternatives against copper on the ground of performance parameters, such as effective current density, delay and power consumption. NiSi nanowire provides highest propagation speed for short wire length, and copper is the best for intermediate wire length, while bundle CNTs is faster for long wire length. NiSi nanowire has lowest power consumption than copper and CNTs.

This paper investigates, assess and compares the performance of carbon nanotubes (CNT) and NiSi nanowires interconnects as prospective alternatives to copper wire interconnects in future VLSI chips.

This study aims to investigate photosensing characteristics of SiC and GaN nanowire-based devices through exposure to UV light. The photocurrent transients have been modeled to determine rise and decay process time constants. The 1D-semiconductor nanowires can exhibit higher light sensitivity compared to bulk materials because of their large surface area to volume ratio and the quantum size effects.

Nanowire devices have been fabricated through dielectrophoresis for integrating nanowires onto pre-patterned electrodes (10 nm Ti/ 90 nm Au) with a spacing about 3 µm onto SiO₂/Si (doped) substrate. The photocurrent measurements were carried out under room temperature conditions with UV light of 254 nm wavelength.

SiCNWs yield very short rise and decay time constants of 1.3 and 2.35 s, respectively. This fast response indicates an enhanced surface recombination of photoexcited electron-hole pairs. Conversely, GaNNWs yield longer rise and decay time constants of 10.3 and 15.4 s, respectively. This persistent photocurrent suggests a reduced surface recombination process for the GaNNWs.

High selective UV light sensitivity, small size, very short response time, low power consumption and high efficiency are the most important features of nanowire-based devices for new and superior applications in photodetectors, photovoltaics, optical switches, image sensors and biological and chemical sensing.

The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties.

The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO₂/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO₂ layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C.

The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures.

High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

The emulation of synapses is essential to neuromorphic computing systems. Despite remarkable progress has been made in the two-terminal device (memristor), three-terminal transistors evoke greater attention because of the controlled conductance between the source and drain. The purpose of this paper is to investigate the synaptic plasticity of the TiO₂ nanowire transistor.

TiO₂ nanowire transistor was assembled by dielectrophoresis, and the synaptic plasticity such as paired-pulse facilitation, learning behaviors and high-pass filter were studied.

Facilitation index decreases with the increasing pulse interval. A bigger response current is obtained at the pulses with higher amplitude and smaller intervals, which is similar to the consolidated memory at the deeply and frequently learning. The increased current at the higher stimulus frequency demonstrates a promising application in the high-pass filter.

TiO₂ nanowire transistors possess broad application prospects in the future neural network.

The purpose of this article is to investigate the magnetic properties and the hysteresis loops behavior of a ferrimagnetic cubic nanowire with mixed spins S_A = 3/2 and S_B = 2.

We have used the Monte Carlo simulation to examine the influences of the exchange interaction J_B, the crystal field ∆ and the temperature on the magnetic properties and hysteresis loops of the nanowire. More exactly, we have shown the temperature dependence of the sublattice magnetizations (m_A and m_B) and the total magnetization (M) for several values of the Hamiltonian parameters, as well as the corresponding phase diagrams. Finally, the effect of an external magnetic field is studied by plotting the hysteresis loops of the system for different values of exchange interaction, crystal field and temperature.

The obtained results show the existence of second-order phase transitions, as well as the compensation behavior. Moreover, according to the values of the Hamiltonian parameters, the system can exhibit one, two or three hysteresis loops.

The magnetic nanowires are of great interest in experimental works, but without theoretical explanations, the experimental results cannot be clarified in depth. For this, we contribute through this theoretical study to understand the nanowires, especially those with mixed spins (2, 3/2).

The development of chemical sensors based on nanostructures, such as nanotubes or nanowires, depends on the capability to reproducibly control the processing of the sensor. Alignment and consistent electrical contact of nanostructures on a microsensor platform is challenging. This can be accomplished using labor‐intensive approaches, specialized processing technology, or growth of nanostructures in situ. However, the use of standard microfabrication techniques for fabricating nanostructured microsensors is problematic. The purpose of this paper is to address this challenge using standard photoresist processing combined with dielectrophoresis.

Nanostructures are suspended in photoresist and aligned between opposing sawtooth electrode patterns using an alternating current (AC) electric field (dielectrophoresis). The use of photoresist processing techniques allow the burying of the nanostructures between layers of metal, thus improving the electrical contact of the nanostructures to the microsensor platform.

This approach is demonstrated for both multi‐walled carbon nanotubes and tin oxide nanowires. Preliminary data show the electrical continuity of the sensor structure as well as the response to various gases.

It is concluded that this approach demonstrates a foundation for a new tool for the fabrication of microsensors using nanostructures, and can be expanded towards enabling the combination of common microfabrication techniques with nanostructured sensor development.

This approach is intended to address the significant barriers of deposition control, contact robustness, and simplified processing to realizing the potential of nanotechnology as applied to sensors.

The purpose of this paper is to study the magnetic properties and the hysteresis behavior of a ferrimagnetic cubic Ising nanowire with mixed spins S = 3/2 and S = 5/2 in which the atoms are placed alternately.

In order to investigate the effects of the exchange interactions and crystal field on the magnetic properties and hysteresis behavior of the nanowire, we have used the Monte Carlo simulation. More precisely, we have plotted the thermal variations of the sublattice and total magnetizations for different values of the Hamiltonian parameters, and we have presented the corresponding phase diagrams. In addition, the influence of an external magnetic field is examined by plotting the variations of hysteresis loops with the change of temperature and crystal field.

All phase transition found in this study are of second-order and the critical temperatures increase linearly with the increase of the exchange interactions. The compensation temperatures appear only for some domains of crystal field D and exchange interaction J_B of the sublattice (B). Moreover, when studying the hysteresis behavior, the system can show one or double hysteresis loops.

The authors consider that this research is consistent with the scientific axis of the journal which benefits a great esteem in our country and in the world. In addition, the results are of technological interest.

The purpose of this paper is to provide a review of recent developments in nanoelectronic devices, with an emphasis on the materials and fabrication technologies employed.

This paper focuses on three critical fields of nanoelectronics: integrated circuits (ICs), sensors and displays. It describes recent developments and considers the materials and techniques used in their fabrication.

This paper shows that nanoelectronic developments, particularly experimental ICs, are progressing very rapidly but all manner of different materials and non‐standard fabrication processes are involved. Major efforts are underway to develop simple and cost‐effective techniques which will allow the high volume production of suitable nanomaterials and their incorporation into commercial nanoelectronic devices.

The paper provides an up‐to‐date review of nanoelectronic device developments and fabrication technologies.