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This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN…
This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures.
The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples.
The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements.
It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.