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The paper investigates the governance and administrative process in the Palembang Light Rail Train (LRT) project in Indonesia and gives suggestions on the strategic development of the LRT project for creating a desakota technopole in Palembang.

This paper adopts both STEEP (Social, Technological, Environmental, Economic, Political) analysis and desakota technopole theoretical framework. The STEEP analysis is used to explain the Palembang LRT project which is to meet one of the city’s high-tech urban transportation goals. The desakota technopole framework is used as a strategic urban planning guideline for the further development of Palembang.

This paper has three findings. First, based on STEEP analysis, Palembang needs smart urban transportation, such as LRT, to solve the present and future traffic problems. Second, the governance and administrative process in the LRT project is mandated to national companies as part of a national government infrastructure policy financed over multiple years through the national budget. Third, it is critical for national, provincial, and local governments to adopt a desakota technopole framework strategy to meet long-term targets.

This paper highlights Indonesia experience towards making a desakota technopole, using the Palembang LRT project policy as the key driver under investigation.

The purpose of this study is to demonstrate a pseudomorphic High Electron Mobility Transistor (pHEMT) cutoff frequency (f_T) and maximum oscillation frequency (fmax) are determined by the role of its gate length (Lg). Theoretically, to obtain an Lg of 1 µm, the gate’s resist opening must be 1 µm wide. However, after the coat-expose-develop (C-E-D) process, the Lg became 13% larger after metal evaporation. This enlargement is due to both resist thickness and its profile.

This research aims to optimize the 1-µm Lg InGaAs-InAlAs pHEMT C-E-D process, where the diluted AZ®nLOF™ 2070 resist with AZ® EBR solvent technique has been used to solve the Lg enlargement problem. The dilution theoretically allows the changing of a resist thickness to different film thickness using the same coating parameters. Here, for getting a new resist, which is simply called AZ 0.5 µm, the experiment’s important parameters such as the coater’s spin speed of 3,000 rpm and soft bake at 110°C for 5 min are executed.

The newly mixed AZ 0.5 µm resist has presented a high resolution and undercut profile rather than standard AZ 1 µm resist. Hence, the Lg metallization after using AZ 0.5 µm optimized process showed better results than AZ 1 µm which used the standard process.

The outcome of the optimization has reached that it is possible to get a nearly sub-µm range gate’s opening using a diluted resist, and at the same time retaining a high resolution and undercut profile.