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Recent developments in microwave GaAs technology are yielding devices with higher power capabilities and increased levels of integration. The mechanical and thermal properties of GaAs and other microwave materials play a key role in the design and assembly of microwave power circuits. Thermal management is a critical element of microwave power circuit design. Thermal properties of microwave materials are discussed and compared with standard microelectronic materials. Material selection criteria are described. Assembly and packaging techniques also affect the overall performance of the GaAs power circuit. The high operating frequencies of microwave circuits make ordinary circuit elements, such as wire bonds and printed conductors, reactive. In addition, electrical performance criteria, such as high current or low impedance, create unique assembly demands. The successful development of a GaAs‐based microwave product is dependent on careful attention to the material properties and precise assembly methods. Techniques of automated assembly and processing are discussed, with ah eye towards maintaining high quality and reliability.

The aim of this paper is to provide the theoretical conceptualization of a bandpass (BP) negative group delay (NGD) microstrip circuit. The main objective is to provide a theorization of the particular geometry of the microstrip circuit with experimental validation of the NGD effect.

The methodology followed in this work is organized in three steps. A theoretical model is established of equivalent S-parameters model using Y-matrix analysis. The GD analysis is also presented by showing that the circuit presents a possibility to generate NGD function around certain frequencies. To validate the theoretical model, as proof-of-concept (POC), a microstrip prototype is designed, fabricated and tested.

This work clearly highlighted the modelled (analytical design model), simulated (ADS simulation tool) and measured results are in good correlation. Relying on the proposed theoretical, numerical and experimental models, the BP NGD behaviour is validated successfully with GD responses specified by the NGD centre frequency: it is observed around 2.35 GHz, with an NGD value of about −2 ns.

It is to be noticed the proposed GD analysis requires limitations of the theoretical NGD model. It is depicted and validated through a POC demonstrating that the circuit presents a possibility to generate NGD function around certain frequencies (assuming constraints around usable frequency and bandwidth).

The NGD O-shape topology developed in this work could be exploited in the future in the microwave and radiofrequency context. Thus, it is expected to develop GD equalization technique for radiofrequency and microwave filters, GD compensation of oscillators, filters and communication systems, design of broadband switch-less bi-directional amplifiers, efficient enhancement of feedforward amplifiers, design method of frequency independent phase shifters with negligible delay, synthesis method of arbitrary-angle beamforming antennas. The BP NGD behavior may also be successfully used for the reduction of resonance effect for the electronic compatibility (EMC) of electronic devices.

The non-conventional NGD O-circuit theoretical development and validation through experimental POC could be exploited by academic and industrial developers in the area of wireless communications including, but not restricted to, 5-generation communication systems. The use of the remarkable NGD effect is also useful for the mitigation of electromagnetic interferences between electronic devices and more and more complex electromagnetic environment (current development of Internet of Things[ IoT]).

The originality of this work relies on the new NGD design proposed in this work including the extraction of S-matrix parameters of the microstrip novel structure designed. The validation process based upon an experimental POC showed very interesting levels of NGD O-circuit (nanosecond-GD duration).

The purpose of this paper is to present the transmission and reflection characteristic of via holes in microwave planar circuits by the matrix‐penciled moment method (MP‐MOM) including physical modeling, theoretical analysis, and experimental test. Especially, the experimental test is given in detail including device under test design, fixture design, and de‐embedding method.

The MP‐MOM is used to analyze the transmission and reflection characteristic of via holes in a wide frequency band. An emulator is built on MATLAB program (M‐file) to explore the effects of various parameters of via holes.

The smaller thickness of the dielectric‐slab means the more conductive to transfer. The smaller radius of the via hole means the more conducive to transfer. The lower dielectric constant means the more conductive to transfer.

Some boundary conditions such as perfect magnetic conduction (PMC) and perfect electric condition have not been studied, and only perfectly matched layer, which means the infinite plane is dealt with.

The transmission and reflection characteristic of via holes will contribute to the design in such fields: microwave planar circuits, multilayer printed circuit boards, radio frequency integrated circuits, monolithic microwave integrated circuits, etc. which can guarantee the maximum transmission and the minimum reflection or radiation.

This paper presents the transmission and reflection characteristic of via holes with different parameters by the MP‐MOM and the design of experimental test including de‐embedding method.

The purpose of this paper is to investigate strategies for expedited dimension scaling of electromagnetic (EM)-simulated microwave and antenna structures, exploiting the concept of variable-fidelity inverse surrogate modeling.

A fast inverse surrogate modeling technique is described for dimension scaling of microwave and antenna structures. The model is established using reference designs obtained for cheap underlying low-fidelity model and corrected to allow structure scaling at high accuracy level. Numerical and experimental case studies are provided demonstrating feasibility of the proposed approach.

It is possible, by appropriate combination of surrogate modeling techniques, to establish an inverse model for explicit determination of geometry dimensions of the structure at hand so as to re-design it for various operating frequencies. The scaling process can be concluded at a low computational cost corresponding to just a few evaluations of the high-fidelity computational model of the structure.

The present study is a step toward development of procedures for rapid dimension scaling of microwave and antenna structures at high-fidelity EM-simulation accuracy.

The proposed modeling framework proved useful for fast geometry scaling of microwave and antenna structures, which is very laborious when using conventional methods. To the authors’ knowledge, this is one of the first attempts to surrogate-assisted dimension scaling of microwave components at the EM-simulation level.

This paper aims to present the design development and measurement of two aerodynamic slotted X-bands back-to-back planer substrate-integrated rectangular waveguide (SIRWG/SIW) to Microstrip (MS) line transition for satellite and RADAR applications. It facilitates the realization of nonplanar (waveguide-based) circuits into planar form for easy integration with other planar (microstrip) devices, circuits and systems. This paper describes the design of a SIW to microstrip transition. The transition is broadband covering the frequency range of 8–12 GHz. The design and interconnection of microwave components like filters, power dividers, resonators, satellite dishes, sensors, transmitters and transponders are further aided by these transitions. A common planar interconnect is designed with better reflection coefficient/return loss (RL) (S₁₁/S₂₂ ≤ 10 dB), transmission coefficient/insertion loss (IL) (S₁₂/S₂₁: 0–3.0 dB) and ultra-wideband bandwidth on low profile FR-4 substrate for X-band and Ku-band functioning to interconnect modern era MIC/MMIC circuits, components and devices.

Two series of metal via (6 via/row) have been used so that all surface current and electric field vectors are confined within the metallic via-wall in SIW length. Introduced aerodynamic slots in tapered portions achieve excellent impedance matching and tapered junctions with SIW are mitered for fine tuning to achieve minimum reflections and improved transmissions at X-band center frequency.

Using this method, the measured IL and RLs are found in concord with simulated results in full X-band (8.22–12.4 GHz). RLC T-equivalent and p-equivalent electrical circuits of the proposed design are presented at the end.

The measurement of the prototype has been carried out by an available low-cost X-band microwave bench and with a Keysight E4416A power meter in the microwave laboratory.

The transition is fabricated on FR-4 substrate with compact size 14 mm × 21.35 mm × 1.6 mm and hence economical with IL lie within limits 0.6–1 dB and RL is lower than −10 dB in bandwidth 7.05–17.10 GHz. Because of such outstanding fractional bandwidth (FBW: 100.5%), the transition could also be useful for Ku-band with IL close to 1.6 dB.

Microwave modules and hybrid circuits have some unique requirements that demand extremely precise dispensing and placement, delicate handling and well controlled curing (or reflow). Assembly of these products can be challenging and defects may result in labor‐intensive manual assembly methods. A better way is to apply automated manufacturing techniques to the assembly of microwave modules and hybrid circuits and thereby eliminate many of the variables that may narrow the process window.

In online searching, the positional logic capability has made it possible to combine terms together in any order, in a word, fragment, phrase, link, sentence, or citation relationship. The advantages and disadvantages of the strategies that can be employed are reviewed. This Boolean operator capability can permit a reduced number of search statements and should therefore make search time shorter. It is also possible to include the truncation symbol in the search statement, allowing even wider selection on one input. A study was made of alternative ways that a positional statement can be formulated. Searches for material on the topic of ‘micro‐wave integrated circuits’ were carried out with the aim of finding the most economical way of generating the maximum number of relevant items while still keeping the noise level to a minimum. It was found that the ideal method for one database was not valid for another file.

Knowledge of the microwave transistor parameters at various bias conditions is often required in computer‐aided design of complex microwave low‐noise circuit. Since the measurements of noise parameters are very complex and time‐consuming, microwave circuit designers usually use the catalogues' data or noise models. The noise data that can be found in the catalogues are often limited to a few frequencies and to one or few bias points. Further, most of the existing noise models require recalculation of elements/parameters of an equivalent circuit for every bias point. Microwave HEMT transistor noise prediction based on a multilayer perceptron neural network, proposed in this paper, enables noise prediction for all operating points over a wide frequency range. Neural networks are trained to learn noise parameters' dependence on bias conditions and frequency. After network training, noise prediction for a specified bias point requires only a network response calculation without changes in the network structure.

The microwave properties of microstripline at S‐band and X‐band and ?/2 rejection filter with midband rejection at 3 GHz fabricated by thick film technology are studied. The effect of an overcoat of Ag thin film of thickness 2 µm deposited by ion plating and electroless plating on Ag and Pd‐Ag thick film circuits is reported. There is a drastic improvement in the performance of the thick film circuits after overcoating. This is attributed to the superior edge definition whereby losses are reduced. As the edge is smoother, especially at the coupling area of the filter, there is tighter coupling, thus increasing the Q of the filter. The overcoat may also reduce the large open areas of the thick film, giving a smoother upper surface finish. This type of metallic overcoat, i.e., hybrid of thick and thin film, may reduce the need for costly and time‐consuming functional trimming and expensive thick film materials.

Thick film technology has been widely used in the past for medium performance packaging solutions, but has been unable to compete with thin‐film technology for high performance requirements. The problems of poor geometrical resolution, together with high dielectric constant and loss, have all contributed to the very limited adopting of thick‐film for advanced applications such as MCMs and microwave. This paper describes a new advanced ceramic based technology using thick‐film conductors and dielectric. Results showing the excellent geometrical properties which result from a combination of novel materials and processing, giving line widths down to 10 microns and via dimensions of 25 micron are presented. The novel dielectric material also provides a dielectric constant of 4, with a loss factor of 1 × 10^−4. This technology allows the fabrication of high density circuits and packages, offering many packaging solutions, including MCM, microwave, sensors and displays, all on one substrate.