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The design, fabrication and experimental validation of defected microstrip structure (DMS) are proposed to address the problem of near-end crosstalk (NEXT) and far-end crosstalk (FEXT) between the microstrip transmission lines in a printed circuit board.

The proposed DMS evolved with the combination of spur line (L-shaped DMS) and U-shaped DMS topologies. This technique reduces the strength of electromagnetic coupling and suppresses crosstalk by optimizing the capacitive and inductive coupling ratio between the linked microstrip lines. The practical inductance value is much more significant in DMS than in defected ground structures (DGS), but the capacitance value remains the same.

A DMS unit is etched on the aggressor microstrip line instead of the DGS circuit. Because there is no leakage via the ground plane and the circuit size is far smaller than with DGS, the enclosure issue is disregarded. DMS structures have a larger effective inductance and are resistant to electromagnetic interference. A tightly coupled transmission line structure with minimal separation between the coupled microstrip line is designed using DMS. Further research must be conducted to improve the NEXT, FEXT and spacing between the transmission lines.

Simulation and actual measurement results show that the proposed DMS structure can effectively suppress crosstalk by analysing the S-parameters, namely, S_12, S_13 and S_14, with measured values of 1.48 dB, 20.65 dB and 21.099 dB, respectively. The data rate is measured to be 1.34 Gbps as per the eye diagram characterization. The results show that the NEXT and FEXT are reduced by approximately 20 dB in the frequency range of 1–11 GHz for mixed signals. The substantial measured results in the vector network analyser coincide with the computer simulation technology microwave studio suite simulation results.

As a common transmission line, the microstrip line plays an important role in high-speed circuits. The purpose of this paper was to investigate the effects of the circuit design of microstrip lines on the signal integrity (SI). In addition, the influence of the type and thickness of the solder resist ink on SI was analyzed to provide guidance for the related producing process design of printed circuit boards (PCBs).

Microstrip line properties consisting of shape, line-width/line-space ratio, reference layer design and as-covered solder resist ink were designed to measure the insertion loss (S₂₁) in high-speed PCB.

The study showed that the insertion loss (S₂₁) of straight, meander, snake-shaped and wavy microstrip lines was approximately consistent. A microstrip line with width/space ratio less than 0.96 is necessary, as the differential line closing produces a mutual interference. Reference layer including the discontinuous area should be repaired by adjusting the microstrip line parameters. With regard to the solder resist ink, the insertion loss of novel solder resist ink decreased by 0.163 dB/in at 12.9 GHz and 0.164 dB/in at 14 GHz, compared with traditional solder resist ink. Accordingly, the insertion loss effectively improved at a lower thickness of solder resist.

This paper demonstrated that the common designing factors of line shape, line/space ratio, reference layer and solder resist influence microstrip line SI in the significant reference of designer-making PCB layout.

The purpose of this paper is to study and discuss the effects of the finite metallisation thickness and conductivity on the properties of microstrip lines.

Effective dielectric constant and attenuation constant of microstrip lines with finite metallization thickness and finite conductivity are analyzed by the method of lines. The experimental results are obtained by using Vector Network Analyzer and the 3680 V Universal Test Fixture of Anritsu.

The strip thickness has a great impact on the attenuation constant of the microstrip lines. The effects can be divided into three parts by the relationship between strip thickness (t) and skindepth (δ). When t<δ, the attenuation constant will decrease rapidly as the strip thickness increase. When δ < t<2δ, the attenuation constant still decrease rapidly as the strip thickness increase, but the slope of the curve will be smaller. When 2δ < t, the effects of the strip thickness will become insignificant and the attenuation constant still decrease slowly as the strip thickness increase.

This paper presents some useful principles about the effects of the finite metallization thickness and finite conductivity in microstrip lines. The reasons for these effects are discussed by analyzing the longitudinal electric field distribution in the strip. Finally, some experimental results are given to verify these principles.

This paper aims to present the design development and measurement of two aerodynamic slotted X-bands back-to-back planer substrate-integrated rectangular waveguide (SIRWG/SIW) to Microstrip (MS) line transition for satellite and RADAR applications. It facilitates the realization of nonplanar (waveguide-based) circuits into planar form for easy integration with other planar (microstrip) devices, circuits and systems. This paper describes the design of a SIW to microstrip transition. The transition is broadband covering the frequency range of 8–12 GHz. The design and interconnection of microwave components like filters, power dividers, resonators, satellite dishes, sensors, transmitters and transponders are further aided by these transitions. A common planar interconnect is designed with better reflection coefficient/return loss (RL) (S₁₁/S₂₂ ≤ 10 dB), transmission coefficient/insertion loss (IL) (S₁₂/S₂₁: 0–3.0 dB) and ultra-wideband bandwidth on low profile FR-4 substrate for X-band and Ku-band functioning to interconnect modern era MIC/MMIC circuits, components and devices.

Two series of metal via (6 via/row) have been used so that all surface current and electric field vectors are confined within the metallic via-wall in SIW length. Introduced aerodynamic slots in tapered portions achieve excellent impedance matching and tapered junctions with SIW are mitered for fine tuning to achieve minimum reflections and improved transmissions at X-band center frequency.

Using this method, the measured IL and RLs are found in concord with simulated results in full X-band (8.22–12.4 GHz). RLC T-equivalent and p-equivalent electrical circuits of the proposed design are presented at the end.

The measurement of the prototype has been carried out by an available low-cost X-band microwave bench and with a Keysight E4416A power meter in the microwave laboratory.

The transition is fabricated on FR-4 substrate with compact size 14 mm × 21.35 mm × 1.6 mm and hence economical with IL lie within limits 0.6–1 dB and RL is lower than −10 dB in bandwidth 7.05–17.10 GHz. Because of such outstanding fractional bandwidth (FBW: 100.5%), the transition could also be useful for Ku-band with IL close to 1.6 dB.

The purpose of this paper is to design a suitable guard trace to reduce the electromagentic interference between two closely spaced high frequency transmission lines. A novel cross-shaped resonator combined via fence is passed down to alleviate far-end and near-end crosstalk (NEXT) in tightly coupled high-speed transmission lines. The distance between the adjacent transmission lines is increased stepwise as a function of trace width.

A rectangular-shaped resonator via fence is connected by a guard trace has been proposed to overcome the coupling between the traces that is separated by 2 W. Similarly, by creating a cross-shaped resonator via fence connected by guard trace that reduces the spacing further by 1.5 W.

A tightly coupled transmission line structure that needs separation by a designed unit cell structure. Further research needs to be conducted to improve the NEXT, far-end crosstalk (FEXT) and spacing between the transmission lines.

This study portrays a novel method that combines the resonators via fence with a minimum spacing between the tightly coupled transmission lines which reduce the NEXT and FEXT; thereby reducing the size of the routing area. The resultant test structures are characterized at high frequencies using time domain and frequency domain analysis. The following scattering parameters such as insertion loss, NEXT and FEXT of the proposed method are measured as 1.504 dB, >30 dB and >20 dB, respectively.

The purpose of this paper is to propose a miniaturized tri-band bandstop filter that finds application in a modern dense communication system where size and multi-band plays a vital role.

In this paper, the authors propose a miniaturized tri-band microstrip bandstop filter which combines the conventional bandstop filter and spur microstrip line structures such that this design achieves tri-band operation at 1.8 GHz and 3 GHz. The overall length of the microstrip filter is found to reduce from 126 to 45 mm because of introduction of spur lines and via-hole grounding. The addition of spur lines replaces two resonators, introduces two additional resonant frequencies and enhances the −6 dB bandwidth of the center frequency by 14 %.The addition of via-holes in each resonator reduces its length into half of its original length, thereby reducing filter size.

Resonance occurs at three different frequencies 1.8, 2.4 and 3 GHz. The filter size reduces from 126 to 45 mm, and the −6 dB rejection bandwidth of center frequency improves by 14 %.

The overall filter size is reduced by 65% and it resonates at three different frequencies 1.8, 2.4 and 3 GHz with an improved bandwidth of 10 % around the center frequency.

The purpose of this paper is to discuss and analyze a microstrip feed equilateral triangular microstrip array antenna (ETMPAA) that is proposed for S band (3 GHz) applications.

The ETMPAA comprises three equilateral triangular patches with equal distance. The size of the antenna is 49.4 mm (0.0494 m)×18.4 mm (0.184 m). The proposed antenna has been designed by etching triangular shape structure on glass epoxy substrate (FR4).

The simulated result shows that ETMPAA has the impedance bandwidth of 900 MHz and the bandwidth can be achieved by controlling the gap between the patch antennas. The antenna is fed by microstrip feeding technique. Design of an antenna using advanced design system (ADS), based on finite element methods (FEM) has been used to analyze and optimize the antenna. Based on the measurement results an antenna proposed with maximum efficiency and maximum gain.

This paper fulfils an identified need to study a microstrip feed ETMPAA is proposed for S band (3 GHz) applications.

The purpose of this paper is to build a neural network (NN) inverse model for the multi-band unequal-power Wilkinson power divider (WPD). Because closed-form expressions of the inverse input–output relationship do not exist, the NN becomes an appropriate choice, because it can be trained to learn from the data in inverse modeling. The design parameters of WPD are the characteristic impedances, lengths of the transmission line sections and the isolation resistors. The design equations used to train the NN inverse model are based on the even–odd mode analysis.

An inverse model of a multi-band unequal WPD using NNs is presented. In inverse modeling of a microwave component, the inputs to the model are the required electrical parameters such as reflection coefficients, and the outputs of the model are the geometrical or the physical parameters.

For verification purposes, a quad-band WPD and a penta-band WPD are designed. The results of the full-wave simulations verify the validity of the design procedure. The resulting NN model outperforms traditional time-consuming optimization procedures in terms of computation time with acceptable accuracy. The designed WPDs using NN are implemented by microstrip lines and verified by using full-wave analysis based on high-frequency structure simulator (HFSS). The results of the microstrip WPDs have good agreements with the corresponding results obtained by using ideal transmission line sections.

The associated time-consuming procedure and computational burden in realizing WPD through optimization are major disadvantages; needless to mention the substantial increase in optimization time because of the multi-band design. NNs are one of the best candidates in addressing the abovementioned challenges, owing to their ability to process the interrelation between electrical and geometrical/physical characteristics of the WPD in a superfast manner.

In this paper we present recent studies on the electrochemical migration processes in Ag thin film parallel microstrip lines in MCM(D) structures. The basic concept is applying accelerated local drop‐test of water solutions onto the surface of two adjacent lines, under a given voltage potential. These operational conditions are often met in the interconnection line buses, placed in the top assembly level of multilayered hybrid structures. The subject of investigations are MCM(D) developed on Al‐sheet carrier with internal conducting and isolating layers, produced through unique selective electrochemical anodization of Al and Ta. This technology process also enables the creation of embedded R and C passive components on the base of TaO_xN_1‐x and Ta₂O₅ (or Al₂O₃) respectively. We propose an electrochemical deposition of Ag/Sb alloys on the surface of Al interconnection lines and contact pads to ease the bondability and solderability in chip mounting procedures. The artificially created silver migrated defects and partial shorts are investigated through the high frequency method of coupled transmission lines in order to eliminate the errors and insufficient validity of DC direct measurements.

In this paper we present new measured loss tangent data for commercially available substrates, and these data are supported by simulations that show how practical variations in loss tangent affect the performance of microwave interconnections and devices. The paper reviews the measurement techniques that are currently available to measure the dielectric constant and loss tangent of substrate materials, and includes a new variation on an existing method that enables substrate parameters to be more easily measured but retains high accuracy. Simulations have been performed on microstrip lines fabricated on 10mil thick substrates using gold conductors to show the relative contributions of conductor and dielectric loss to the total line loss over the frequency range 0‐40GHz. Included in these simulations are the effects of conductor surface roughness. The simulated data are related to measured line microstrip line loss data over the frequency range 50MHz‐40GHz. The measured values, for an etched gold line on alumina, vary from 0.0045dB/mm at 50MHz to 0.04dB/mm at 40GHz.