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Reviews the traditional use of thermoset (epoxy) adhesives for various bonding applications and highlights some limitations in today’s microelectronics arena. In particular, concerns for thermal and stress management associated with large area silicon bonded to a wide variety of substrate materials has led to an increasing interest in thermoplastic adhesive technology. Thermoplastics are not always the best solution for every application. This paper sets out to address the “pros and cons” of each polymer technology for different microelectronic applications taking into account some of the key physical properties such as Tg, TCE and modulus. In addition, practical issues such as handling, storage and processing are considered in detail.

The driving forces behind recent significant improvements in organic packages for microelectronic applications are electrical performance, product weight, size and manufacturing cost. A very careful selection of optimum manufacturing processes, equipment and materials, and stringent control of critical manufacturing operations are prerequisites for success in this emerging market place. Major technical and business related challenges to a printed circuit board manufacturer who plans to enter this market are discussed.

The complexity of microelectronic circuits, their scale of integration and clock speed requirements have been increasing steadily. All these changes have the effect of increasing the power density of the microcircuits. ICs with a power of several watts and an area of over a square centimetre are quite common. Thus, there is more heat generated per device at die, component and substrate‐attach levels of electronic packaging. In order to maintain reliability of finished products, the junction temperature of the constituent devices must be kept low. It has been demonstrated that thermal management can be one key to lowering the cost and increasing the performance life of microelectronic products. The cost‐effectiveness of lowering device temperature has been demonstrated to be dramatic compared with the cost of thermal management materials. Proper thermal management of advanced microelectronic devices has to be addressed at all levels. One should address the problem from the basic level of die‐attach, through component‐attach, and eventually substrate‐attach to thermal drains. Thermal management is almost invariably coupled with a thermally induced stress problem. The increase in temperature at the device level also means a larger fluctuation of temperature from the ambient. Each cycle of on‐off for the device represents one thermal cycle. Stress‐induced failure due to coefficient of thermal expansion (CTE) mismatch is much more acute for higher power devices. In this paper, the authors address the issue of thermally induced stress on the microelectronic product at all levels of packaging, with major emphasis on component and substrate levels. Various ways and examples of reducing or eliminating this stress, which is a major cause of device failures, will be demonstrated. One of the proven methods is through the use of low Tg epoxies with high thermal stability.

The purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.

Direct current plasma magnetron sputtering technique was employed for the WSi film growth. Different sputtering parameters were investigated, and the WSi films were characterized using four‐point probe electrical measurement method.

The experimental results reveal that the sputtering parameters such as deposition pressure and substrate temperature exert significant influence on the electrical properties of the WSi films.

By tuning the sputtering parameters, the electrical properties of the WSi films can be optimized and the film resistivity can be reduced significantly.

The investigation results presented in this paper are useful information for microelectronic industries in the area of microelectronic devices metallization.

The fabrication method described in this paper allows fabricating low‐resistivity WSi films by employing a lower deposition pressure and a lower substrate temperature.

The scope and extent of collective bargaining over technological change in Canada is analysed. The public policy context in Canada is compared with that of the United States. Data on collective agreement provisions regarding notice of technological change, income and employment security, training, and joint union‐management technology committees are reported. These include variations in provision frequencies across Canadian jurisdictions, industries and bargaining unit structures. Canadian labour′s responses to the effects and uses of microelectronic technology are addressed. It is concluded that, although Canadian unions have negotiated significantly more anticipatory contract provisions than exist in the US, widespread coverage of technological change remains a goal in collective bargaining. This is especially true regarding the health and control issues raised by microelectronic technologies.

The purpose of this paper is to present the performance of an 8-bit hybrid DAC which is suitable for wireless application or part of a built-in test block for ADC. The hybrid architecture used is the combination of thermometer coding and binary-weighted resistor architectures.

The conventional DAC topology performance tends to degrade at high-resolution applications. A hybrid topology, which combines an equal number of bits of thermometer coding and binary-weighted resistor architectures operating at higher sampling frequency, was proposed in this work. The die was fabricated in 180 nm CMOS process technology with a supplied voltage of 1.8 V.

Measured results showed that the DNL and INL errors are within −1 to +1 LSB and −0.9 to +0.9 LSB, respectively for the input range of 0.9 V at the clock rate of 200 MHz, and this DAC was proven monotonic. This 0.068 mm² DAC consumed 12.6 mW for the data conversion.

This paper is of value in showing the equal division of bits from thermometer coding and binary-weighted resistor architectures provides smaller die size and enhances the performance of hybrid DAC, in terms of linearity, which are DNL and INL errors and guarantees monotonicity at higher sampling frequency.

The purpose of this article is to describe the design of electronic and microelectronic modules and, in particular, it focuses on connecting system of electrical modules to the main board of printed board. The theory of thermomechanical loading of system is presented. New methods of rigid solder connection for electronic modules are also presented.

A newly developed system with chip or cylindrical components is presented. The article describes a practical solution of connection with 0.603 and mini-metal electrode leadless face (MELF) surface mount device (SMD) resistors.

A new method of rigid solder connection for electronic modules is presented. This system is original and patented.

This solution is not used yet. Testing of a new system is executed now.

This article shows a real and original construction with chip and cylindrical chip components.

The design of polymeric materials for microelectronic applications is based on the recognition that structural features in a polymer chain influence the physical properties of the polymer. Illustrations of structure‐property relationships are drawn from applications in lithography, dielectric interlayers and packaging. Among the properties discussed are resolution, plasma etch resistance, thermal stability, electrical properties, permeability, adhesion, mechanical properties and thermal expansion.

The RHyMAS® In‐Line Robotic Hybrid Microelectronic Assembly System is a high volume, high speed component placement and verification system. It is capable of automatically loading substrates from feed mechanisms onto a transfer mechanism, precisely positioning a wide variety of components onto the substrates, and automatically unloading populated substrates to follow‐on operations.