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This paper aims to investigate the metallurgical reactions between two commercial AgPt thick films used as a solder land on a low temperature co‐fired ceramic (LTCC) module and solder materials (SnAgCu, SnInAgCu, and SnPbAg) in typical reflow conditions and to clarify the effect of excessive intermetallic compound (IMC) formation on the reliability of LTCC/printed wiring boards (PWB) assemblies.

Metallurgical reactions between liquid solders and AgPt metallizations of LTCC modules were investigated by increasing the number of reflow cycles with different peak temperatures. The microstructures of AgPt metallization/solder interfaces were analyzed using SEM/EDS investigation. In addition, a test LTCC module/PWB assembly with an excess IMC layer within the joints was fabricated and exposed to a temperature cycling test in a −40 to 125°C temperature range. The characteristic lifetime of the test assembly was determined using DC resistance measurements. The failure mechanism of the test assembly was verified using scanning acoustic microscopy and SEM investigation.

The results showed that the higher peak reflow temperature of common lead‐free solders had a significant effect on the consumption of the original AgPt metallization of LTCC modules. The results also suggested that the excess porosity of the metallization accelerated the degradation of the metallization layer. Finally, the impact of these adverse metallurgical effects on the actual failure mechanism in an LTCC/PWB assembly was demonstrated.

This paper proves how essential it is to know the actual LTCC metallization/solder interactions that occur during reflow soldering and to recognize their effect on solder joint reliability in LTCC module/PWB assemblies. Moreover, the adverse effect of using lead‐free solders on the degradation of Ag‐based metallizations and, consequently, on board level reliability is demonstrated. Finally, practical guidelines for selecting materials for second‐level solder interconnections of LTCC module are given.

Hybrid manufacturers are uncertain as to whether laser‐drilled holes on 96% alumina are suitable for mixed‐bonded thick film conductor metallisation, or whether they require further treatment before metallisation if reliable circuitry is to be produced. Moreover, although the metallisation of holes on ceramic through the use of screen printed thick films is fairly common in the hybrid industry, this paper shows that published information on this topic is scant, at times contradictory, and, because of proprietary constraints, generally of little use. The authors report on an extensive study in which both as‐laser‐drilled holes and thermally‐treated laser‐drilled holes are metallised using a mixed bonded Pd‐Ag conductor paste. Both encapsulated and non‐encapsulated metallised holes are then subjected to various accelerated life tests, followed by ‘power‐up’ tests to the extreme of circuit destruction. An account is also given of a printing set‐up which allows volume production of printed through‐holes without the need for special skill or attention on the part of the printing operator.

Some characteristics of the metallisation of leadless ceramic components are discussed, such as dissolution, reliability of joints, intermetallic compound formations and the migration of silver. It is concluded that it is not the type of the metallisation that is important, but the quality of the make.

This paper aims to present the results of measurements of the photovoltaic structures made by electroless selective metallization technology. The developed technology provides low-cost contacts in any form, and parameters of photovoltaic cells made in this technology provide reliable results, comparable with those usually used.

In this paper, photovoltaic cells with contacts based on Nip and NiCuP alloy were performed. As a substrate, mono- and multicristaline silicon was used. After photovoltaic cells have been prepared, sheet resistance of the contact layers and electrical parameters were measured. Composition and structure of contact layers were also measured.

Obtained results of sheet resistance and contact layers are repeatable and comparable with previously published results. Electrical parameters of the photovoltaic cells made are comparable with used substrate and technologies. The authors have also noticed that the costs of the electroless metallization which is used to make contact layers is lower than metallization made by thick film or vacuum deposition technologies.

The paper presents new, unpublished results of electrical parameters of photovoltaic cells with contact layers made by electroless metallization. The original idea is the usage of metallization in an acidic solution (pH = 2). In this proposed technology, photovoltaic cells on mono- and multicrystalline silicon plates were performed.

This paper aims to present the possibility of computer-aided technology of chemical metallization for the production of electrodes and resistors based on Ni-P and Ni-Cu-P layers.

Based on the calculated parameters of the process, test structures were made on an alumina substrate using the selective metallization method. Dependences of the surface resistance on the metallization time were made. These dependencies take into account the comparison of the calculations with the performed experiment.

The author created a convenient and easy-to-use tool for calculating basic Ni-P and Ni-Cu-P layer parameters, namely, surface resistance and temperature coefficient of resistance (TCR) of test resistor, based on chemical metallization parameters. The values are calculated for a given level of surface resistance of Ni-P and Ni-Cu-P layer and defined required range of changes of TCR of test resistor. The calculations are possible for surface resistance values in the range of 0.4 Ohm/square ÷ 2.5 Ohm/square. As a result of the experiment, surface resistances were obtained that practically coincide with the calculations made with the use of the program created by the authors. The quality of the structures made is very good.

To the best of the authors’ knowledge, the paper presents a new, unpublished method of manufacturing electrodes (resistors) on silicon, Al₂O₃ and low temperature co-fired ceramic substrates based on the authors developed computer program.

This paper aims to present the possibility of the technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to perform low-cost contacts in any form.

The study used a multi- and monocrystalline silicon plates. On the surface of the plates, the contact by the electroless metallization was made. After metallization stage, annealing process in a temperature range of 100-700°C was conducted to obtain ohmic contact in a semiconductor material. Subsequently, the electrical parameters of obtained structures were measured. Therefore, trial soldering was made, which demonstrated that the layer is fully soldered.

Optimal parameters of the metallization bath was specified. The equations RS = f (metallization time), RS = f (temperature of annealing) and C-V characteristics were determined. As a result of conducted research, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated silicon plate is technology presented below in the following steps: masking, selective activation and nickel-plating of activated plate. Such obtained metal layers have great variety in application and, in particular, can be used for the preparation of electric terminals in silicon solar cell.

The paper presents a new, unpublished method of manufacturing contacts in the structure of the photovoltaic cell.

An evaluation of the feasibility of copper ball‐wedge bonding on Au, Cu thick film and aluminium metallisations was carried out. This evaluation is not merely a check for feasibility, but will also give more insight into the problems concerning copper ball‐wedge bonding. This article does not pretend to represent profound research on copper ball bonding, but will give qualitative insight. Copper ball bonding, without using cover gas, is possible, but the bond quality decreases. Extrusion and penetration of the ball bond in the substrates are caused by the hardness of the copper. This can only be avoided when the hardness of the substrate is matched to the hardness of the copper ball/wire. Bonding mechanisms are similar for bonding on thick film to those for bonding on metallisations. Matching hardness of the substrate to the ball/wire seems to be a necessity for proper ball‐wedge bonding.

The purpose of this paper is to present a new multilayer process for three‐dimensional molded interconnect devices (3D‐MIDs) that allows the assembly of modern area array packaged semiconductors.

A new 3D‐MID multilayer process based on local overmolding is developed. To investigate this new process, a 3D demonstrator is designed, simulated and fabricated. Various technologies such as injection molding, maskless laser assisted electroless metallization, overmolding and laser via drilling are used.

Using the new 3D‐MID multilayer process a 3D demonstrator with three metallization layers is fabricated. Injection molding simulation is utilized to ensure a feasible demonstrator design. It is shown that a surface laser treatment improves layer‐to‐layer adhesion during the process. Shear and pull tests prove the adhesion promotion. The 3D fine‐pitch‐metallization is done down to 60 μm track width. Via resistance is measured by four terminal sensing in agreement with previous results. Design rules for process compatible vias are introduced. The fabricated demonstrator is suitable for flip‐chip‐based area array packaged semiconductors.

A proof of concept is given by the fabricated demonstrator. Further, work should include reliability tests of the multilayer structures and improvement of individual process steps.

The paper describes a new multilayer process for 3D‐MIDs. It overcomes existing restrictions regarding the electrical routing on 3D‐MID surfaces. The compatibility of area array packaged semiconductors with a high‐inputs/outputs count and the 3D‐MID technology is improved.

A study was undertaken to evaluate the thermosonic gold‐wire bonding capability to Ti‐Pd‐Cu‐Ni‐Au thin film metallisation on newly developed polymer hybrid integrated circuits (POLYHICs). (The POLYHIC technology incorporates alternating layers of polymer and metal added to conventional Hybrid Integrated Circuits which provide for increased interconnection density.) Destructive wire‐pull strengths were measured as a function of varying wire‐bonding machine operating parameters of wedge bond force, wedge bond time, temperature, and ultrasonic energy. All data were evaluated and compared with wire bonding under similar conditions to thin film circuits on Al2O3 ceramic. The results for wedge‐bond associated failures indicated that machine operating parameters of wedge bond force, time and ultrasonic energy similarly affected the average wire‐pull strength for both the ceramic and POLYHIC circuits. Pull strengths for equivalent metallisation schemes and bonding parameters were generally slightly higher and more tightly distributed for bonds made to metal films on ceramic. A strong correlation was found to exist between wire‐pull strengths and surface topography (as measured by a profilometer technique) of the thin film metallisation for the POLYHICs which had both smooth and rough metallisation surfaces for metal films on top of the polymer. The results indicated that rough metallisation bonded more easily and yielded much higher wire‐pull strengths. Also, rougher films were shown to effectively increase the parameter‐operating windows for producing reliable wire bonds. A semi‐quantitative analysis was developed to help explain this correlation. Surface topography effects were also found to be a key factor when evaluating wire bondability as a function of substrate bonding temperature. Wedge‐bond strength was essentially independent of temperature for bonds made to rougher metallisation while a strong temperature dependency was found when wire bonds were made to smoother films.

The purpose of this study is to investigate the mechanisms of degradation of aluminum metallization under conditions of thermal shock caused by rectangular current pulses (amplitude j < 8 × 10¹⁰ A/m², duration t < 800 μs).

The results were obtained using oscillography and optical microscopy and through the construction of an empirical model of the thermal degradation of metallization systems.

Initially, for the authors’ studies, they deduced an equation that associated the depth of melting with the parameters of a current pulse.

The authors were able to observe effects only in systems with appropriate adhesion of the thin metal films. For the systems with bad adhesion, the main mechanisms of degradation were associated with the melting of the metal, the formation of melted drops (up to 20 mcm in size) and the movement of these drops along the electrical field due to the electrocapillary effect.

The mechanisms the authors studied could only occur in high-power semiconductor devices.

The principal mechanism of melting of a metallization track is linked to the heat dissipation at the interface of solid and liquid phases under conditions of thermal shock. The authors estimated the mechanical stresses in subsurface layers of silicon in the proximity of a non-stationary thermal source. The authors’ results show that the mechanical stresses that are strong enough to form dislocations emerge with current flow with power measuring approximately 0.7 Pkr.