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To develop a silicon lateral Schottky rectifier with low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.

A two‐dimensional device simulation has been used, to examine the effect lateral dual sidewall Schottky concept on the current‐voltage characteristics of a lateral Schottky rectifier on silicon‐on‐insulator. The Schottky contact consists of a low‐barrier metal and a high‐barrier metal.

Results show that, during forward bias, the low‐barrier Schottky (LBS) contact conducts resulting in a low forward voltage drop. During the reverse bias, the LBS contact is shielded by the depletion region of the high‐barrier Schottky contact resulting in a low reverse leakage current.

With this approach, silicon Schottky rectifiers with low power dissipation and improved breakdown voltage can be realized.

The proposed device has a large commercial potential as a low‐power high‐voltage switching device.

The main purpose of this paper is to find a simple method to improve the breakdown voltage of BJTs fabricated on SOI.

We have used two‐dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n‐type implantation on the collector n/n+ junction side.

First, our method reduces the peak electric field at the silicon film‐BOX interface and secondly, the collector‐tub facilitates the collector potential to be absorbed by both collector drift and substrate regions improving the collector breakdown significantly.

An improved breakdown voltage improves the reliability of BJTs on SOI.

Our results show that the BV_CEO of the bipolar transistors with a collector‐tub is enhanced by 2.7 times when compared with a conventional lateral bipolar transistor (LBT) with identical drift region doping. This improvement has an important practical value in the fabrication of SOI‐based LBTs.

The purpose of this paper is to present an analytical drain current model for output characteristics of strained‐Si/SiGe bulk MOSFET.

A physics‐based model for current output characteristics and transconductance of strained‐Si/SiGe bulk devices has been developed incorporating the impact of strain (in terms of equivalent Ge mole fraction), strained silicon thin film thickness, gate work function, channel length and other device parameters. The accuracy of the results obtained using this model is verified by comparing them with 2D device simulations.

This model correctly predicts the output characteristics, I_DS−V_GS characteristics, transconductance and output conductance of the strained‐Si/SiGe MOSFET and demonstrates a significant enhancement in the drain current of the MOSFET with increasing strain in the strained‐Si thin film, i.e. with increasing equivalent Ge concentration in the SiGe bulk.

Can be implemented in a SPICE like simulator for studying circuit behaviour containing strained‐Si/SiGe bulk MOSFETs.

The model discussed in this paper can be easily implemented in a circuit simulator and used for the characterization of strained silicon devices. This complements the recent trend of investigation of new materials and device structures to maintain the rate of advancement in VLSI technology.

This paper presents, for the first time, a compact surface potential‐based analytical model for strained‐Si/SiGe MOSFETs which predicts the device characteristics reasonably well over their range of operation.

Inconel 718 is used in gas turbine engines for aerospace applications due to high creep resistance but generating a hole with good surface integrity is challenging because the γ′′ interface is very strong so that slip is difficult in the grain boundary. So, the purpose of this work is to enhance the performance of drilling using a micro texture drill tool filled with solid lubricant.

Three different micro textures such as star shaped with 6-sharp apex, rectangular slots parallel and perpendicular to drill axis are created using laser on the drill tool. Deep cryogenic treatment is done on the textured tool to improve the strength and wear resistance before it is filled with solid lubricant. A detailed experimental investigation is performed to analyse the hole geometry and surface integrity of the drilled hole.

The accuracy of the drilled holes is enhanced in the star shaped texture drill tool over other textured and non-textured tools. A significant improvement in surface finish and hardness are observed and moreover cylindricity error, burr height of the hole is less for the above condition. It is also inferred that, at lower feed rate and higher speed produce hole with an accuracy of 96%.

Aerospace industry is focussing on improving the hole geometry and surface in Inconel 718. This work demonstrates the novel technique to improve drilling of Inconel 718 using laser textured tool filled by the solid lubricant.