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In this paper studies on the lab formulated fritless silver thick film paste with two different binder compositions that have been used to fabricate λ/2 microstrip rejection filter in the X and Ku band are reported. These have been compared with ESL (USA) paste and copper thin film metallization for the same circuit. The thick film circuits were overlayed with TiO₂ thick film of different thickness and changes in the characteristics studied. In the X band, the Q of the filter improves with overlay and is also dependent on the Ag paste formulation, whereas in the Ku band there are no thick film paste dependent properties observed due to overlay. Thickness of overlay and metallization paste formulation dependent factors should be taken into consideration during fabrication of high density and multi‐layer microwave integrated circuits.

The purpose of this paper is to report upon high power, internally matched GaN high electron mobility transistors (HEMTs) at Ku band with 1.5 GHz bandwidth, which employ a simple and cost‐effective lossless compensated matching technique.

Two 4 mm gate periphery GaN HEMTs are parallel combined and internally matched with multi‐section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power of the circuit, while the input matching network is designed at the upper frequency for a flat gain.

With the reactively compensated matching technique, the internally matched GaN HEMTs exhibit a flat saturated output power of 43.2+0.7 dBm and an average power added efficiency of 15 per cent over 12 to 13.5 GHz.

This paper provides useful information for the internally matched GaN HEMTs.

This paper aims to design a radio frequency micro-electro-mechanical system (RF MEMS)-based phase shifter using chamfered coplanar waveguide (CPW) transmission line (t-line) with open-circuit interdigital metal–air–metal (ID MAM) capacitors.

The proposed phase shifter achieves maximum differential phase shift with low loss at Ku band. The phase shifter is built with one switchable fixed-fixed beam (MEMS switch) on chamfered CPW t-line in series with two planar open-circuit ID MAM capacitors. An equivalent circuit model for the proposed phase shifter is derived, and its parameters are extracted using an electromagnetic (EM) solver.

The MEMS switch is actuated using an electrostatic method with the calculated residual stress of 44.26 MPa. The fabricated phase shifter exhibits low insertion loss, close to 0.14 dB at 17 GHz, with the maximum phase shift of 15.06°. The return loss is greater than 23 dB between 12 and 18 GHz.

This phase shifter presents a promising solution for low loss applications in the Ku band with a maximum phase shift. As the maximum phase shift of 15.06° is achieved for a unit cell with low insertion loss, the phase shifter is found to be feasible for modern electronically tunable phased arrays used for satellite communication and radar systems.

On average, a medium-sized satellite consist of almost 500 sensors where powering these sensors in space in such an unreachable environment is critical. Backing this, a compact energy harvester for powering up distant sensors is discussed here is the purpose of this paper. This is in line with the geostationary satellite-powered using the available electromagnetic energy on the satellite panels in space.

The designed rectenna makes use of a compact wideband receiving antenna operating at the targeted frequency band from 8 to 18 GHz. It also consists of a simple dual diode rectifier topology with a matching circuit, bandpass filter and a resistive load to convert the received radio frequency energy into usable direct current (DC) voltage.

The rectenna measurement is performed using three different configuration setups. This shows that a maximum DC voltage of 1.8 V and 5-10 mV is harvested from rectifier and rectenna (includes antenna and rectifier) when 20 dBm power is transmitted from the transmitting antenna operating at X and Ku band. This makes the rectenna feasible to power wireless sensors in a structural health monitoring system.

The measurements are performed by considering a real-time environment in space in terms of the distance between the transmitting and receiving antenna, which depends on the far-field of the transmitting antenna in a satellite.

The purpose of this paper is to report on the Ku band microwave characteristics of moisture laden soya seeds using overlay technique.

Ku band (13‐18 GHz) moisture dependent microwave permittivity, conductivity, penetration depth of moisture laden soybean (Glycine Max) using overlay on Ag thick film equilateral triangular patch antenna are studied. The change in the frequency response of the patch antenna due to change in moisture content of the soybean overlay has been used to obtain the various microwave properties.

The permittivities obtained are in the range expected of moisture laden soybean. As moisture content increases microwave dielectric constant, dielectric loss, and conductivity of soybean increases. Only the amplitude data have been used here.

Ku band characterization of soybean has been done using overlay technique. The thick film patch antenna is sensitive even to ∼4 percent moisture content in the overlay material. This can be used for even moisture sensing at low moisture levels. This paper is believed to be an original research report.

This paper aims to present the design development and measurement of two aerodynamic slotted X-bands back-to-back planer substrate-integrated rectangular waveguide (SIRWG/SIW) to Microstrip (MS) line transition for satellite and RADAR applications. It facilitates the realization of nonplanar (waveguide-based) circuits into planar form for easy integration with other planar (microstrip) devices, circuits and systems. This paper describes the design of a SIW to microstrip transition. The transition is broadband covering the frequency range of 8–12 GHz. The design and interconnection of microwave components like filters, power dividers, resonators, satellite dishes, sensors, transmitters and transponders are further aided by these transitions. A common planar interconnect is designed with better reflection coefficient/return loss (RL) (S₁₁/S₂₂ ≤ 10 dB), transmission coefficient/insertion loss (IL) (S₁₂/S₂₁: 0–3.0 dB) and ultra-wideband bandwidth on low profile FR-4 substrate for X-band and Ku-band functioning to interconnect modern era MIC/MMIC circuits, components and devices.

Two series of metal via (6 via/row) have been used so that all surface current and electric field vectors are confined within the metallic via-wall in SIW length. Introduced aerodynamic slots in tapered portions achieve excellent impedance matching and tapered junctions with SIW are mitered for fine tuning to achieve minimum reflections and improved transmissions at X-band center frequency.

Using this method, the measured IL and RLs are found in concord with simulated results in full X-band (8.22–12.4 GHz). RLC T-equivalent and p-equivalent electrical circuits of the proposed design are presented at the end.

The measurement of the prototype has been carried out by an available low-cost X-band microwave bench and with a Keysight E4416A power meter in the microwave laboratory.

The transition is fabricated on FR-4 substrate with compact size 14 mm × 21.35 mm × 1.6 mm and hence economical with IL lie within limits 0.6–1 dB and RL is lower than −10 dB in bandwidth 7.05–17.10 GHz. Because of such outstanding fractional bandwidth (FBW: 100.5%), the transition could also be useful for Ku-band with IL close to 1.6 dB.

This paper aims to study tuning effects on thick film microstripline due to ferrite thick film overlay.

The possibility of obtaining tuning characteristics in the Ku band microwave region in the absence of external magnetic field by a simple process of using Ni_xZn_1−xFe₂O₄ thick film and bulk as in‐touch overlay over Ag thick film microstripline was investigated. The microstripline is basically a non‐resonant component with high‐transmission at a large microwave frequency band. The ferrite was synthesized by precursor method and the thick films were deposited by screen printing.

It was found that tuning characteristics were observed and composition, thickness and precursor dependent changes occurred. The changes with composition are more prominent in the 14.5‐16.5 GHz range. Also, the ferrite thick film overlay produces a deep notch at 15.7 GHz. It is observed that the pellet overlay also makes the microstripline very dispersive with a high‐insertion loss in the 16‐17 GHz range. The presence of permeability‐related effects interfering with the normal propagation of the microstrip circuits might be causing the changes in the circuits.

Owing to the Ni_xZn_1−xFe₂O₄ overlay the simple microstripline can be tuned to have narrow band filter type of characteristics. Thick film Ni_xZn_1−xFe₂O₄ overlay gives the added advantage of planer configuration along with cost‐effectiveness in the absence of magnetic field.

The purpose of this paper is to compare thick and thin film microstripline response to conducting overlay.

Study changes in transmission and reflection of both thick and thin film microstripline due to overlay of polyaniline (PANI) thin film on stainless steel and silver. PANI was deposited by electropolymerisation method using HCl and H₂SO₄.

Transmittance of both the thick and thin film microstripline decreases due to the PANI overlay and reflectance increases. Thin film microstripline is more sensitive to the type of conducting overlay than thick film microstripline. PANI deposited on silver is more absorbing than PANI deposited on stainless steel using HCl acid. The overlay makes the response of the microstripline more dispersive.

The increase in reflectance and decrease in transmittance can provide information about the type of overlay materials. There is need for newer materials which can replace traditional metals for microstrip components. PANI might serve this purpose.

Because of its lower dielectric constant and loss tangent, and its greater surface smoothness, fused silica is very suitable for use in the KU band and above, but its cost is very high. The purpose of this paper is therefore to select a new substrate which competes with fused silica on the grounds of lower cost; to adapt the hybrid technology to this new substrate; to show ,comparing the measured performances of a filter realised on fused silica and on this new substrate, that the latter is suitable for MICs in the wide band, but not in the narrow band; and to describe an application of this substrate in the 22–24 GHz band. Thus, after an investigation of the electrical parameters and of the costs of different substrates, Duroid was selected and compared with silica. This substrate is composed of a non‐woven glass microfibre reinforced by polytetrafluorethylene; its microwave quality is theoretically almost similar to that of the fused silica one but its cost is much lower. The adaptation of hybrid technology on this substrate, notably in order to use beam lead and die semiconductor components with thermocompression bonding as a connection method, involved the use of a copper foil laminated on Duroid. This paper describes the process that has been perfected: selective electroplating of gold on copper, compatibility of etching solutions of gold and copper, attachment and connection methods of semiconductors, substrate attachment in a package, etc. A comparison of the performances of a filter realised on fused silica and on Duroid gives the following conclusion: Duroid is suitable for wide band circuits, but not for narrow band circuits because of its instability under stress test temperatures (−20 to 80°). In this last case, silica will be preferred. A transmitter‐receiver in the 22–24 GHz band for radio links is described.

The aim of this paper is to investigate microwave Ku band absorbance, complex permittivity, and permeability of SrFe₁₂O₁₉ thick films by a simple and novel waveguide technique.

The glass frit free or fritless strontium hexaferrite thick films were formulated on alumina by screen printing technique from the powder synthesized by chemical co precipitation method for pH 11 adjusted during the reaction. The 13‐18 GHz frequency band microwave absorbance of the SrFe₁₂O₁₉ thick films by a simple waveguide method. The complex permittivity and permeability of strontium hexaferrite thick films was measured by voltage standing wave ratio technique.

SrFe₁₂O₁₉ thick films show high ∼80 percent absorbance in the whole 13‐18 GHz frequency band. The thickness dependant microwave properties of strontium hexaferrite thick films were observed. The real permittivity ε′ lies in between eight and 35 with the variation in thickness of the thick film SrFe₁₂O₁₉. The real microwave permeability μ′ of strontium hexaferrite thick films lies in the range 1.12‐6.41. The resonance type behavior was observed at frequency 14.3 GHz. The SrFe₁₂O₁₉ thick film of thickness 30 μm could be a wide band (∼5,000 MHz) absorber with absorbance ∼87 percent for the whole 13‐18 GHz frequency band.

The complex permeability of strontium hexaferrite thick films was measured by simple novel waveguide method. The high absorbance (∼87 percent) of thick film SrFe₁₂O₁₉ over a broad band ∼5,000 MHz will be useful in achieving RAM coatings required for 13‐18 GHz frequency band.