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Article
Publication date: 21 May 2019

Piotr Kowalik, Edyta Wrobel and Janusz Mazurkiewicz

The purpose of this paper is to present the possibility of technology of chemical metallization for the production of electrodes and resistors based on Ni–P alloy on silicon (Si)…

Abstract

Purpose

The purpose of this paper is to present the possibility of technology of chemical metallization for the production of electrodes and resistors based on Ni–P alloy on silicon (Si), alundum (Al2O3) and low temperature cofired ceramic (LTCC) substrates. The developed technology provides low cost in any form.

Design/methodology/approach

During the study monocrystalline Si plates and Al2O3 and LTCC substrates were used. On the surface of the substrates, the electrodes (resistors) by the electroless metallization were made. Subsequently, the electrical parameters of obtained structures were measured. Afterwards, trial soldering was made to demonstrate that the layer is fully soldered.

Findings

Optimal parameters of the metallization bath were specified. As a result of the research conducted, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated Si plate and Al2O3 and LTCC substrates comprises the following technology: masking, selective activation, nickel-plating of activated plate. Such obtained metal layers have a great variety of application; in particular they can be used for the preparation of electric contacts in Si solar cells, production of electrodes and resistors and production of electrodes in thermoelectric structures.

Originality/value

The paper presents a new, unpublished method of manufacturing electrodes (resistors) on Si plate and Al2O3 and LTCC substrates.

Details

Microelectronics International, vol. 36 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 4 January 2016

Piotr Kowalik, Edyta Wrobel and Janusz Mazurkiewicz

This paper aims to present the results of measurements of the photovoltaic structures made by electroless selective metallization technology. The developed technology provides…

Abstract

Purpose

This paper aims to present the results of measurements of the photovoltaic structures made by electroless selective metallization technology. The developed technology provides low-cost contacts in any form, and parameters of photovoltaic cells made in this technology provide reliable results, comparable with those usually used.

Design/methodology/approach

In this paper, photovoltaic cells with contacts based on Nip and NiCuP alloy were performed. As a substrate, mono- and multicristaline silicon was used. After photovoltaic cells have been prepared, sheet resistance of the contact layers and electrical parameters were measured. Composition and structure of contact layers were also measured.

Findings

Obtained results of sheet resistance and contact layers are repeatable and comparable with previously published results. Electrical parameters of the photovoltaic cells made are comparable with used substrate and technologies. The authors have also noticed that the costs of the electroless metallization which is used to make contact layers is lower than metallization made by thick film or vacuum deposition technologies.

Originality/value

The paper presents new, unpublished results of electrical parameters of photovoltaic cells with contact layers made by electroless metallization. The original idea is the usage of metallization in an acidic solution (pH = 2). In this proposed technology, photovoltaic cells on mono- and multicrystalline silicon plates were performed.

Details

Microelectronics International, vol. 33 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 5 January 2015

Edyta Wrobel, Piotr Kowalik and Janusz Mazurkiewicz

This paper aims to present the possibility of the technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to…

Abstract

Purpose

This paper aims to present the possibility of the technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to perform low-cost contacts in any form.

Design/methodology/approach

The study used a multi- and monocrystalline silicon plates. On the surface of the plates, the contact by the electroless metallization was made. After metallization stage, annealing process in a temperature range of 100-700°C was conducted to obtain ohmic contact in a semiconductor material. Subsequently, the electrical parameters of obtained structures were measured. Therefore, trial soldering was made, which demonstrated that the layer is fully soldered.

Findings

Optimal parameters of the metallization bath was specified. The equations RS = f (metallization time), RS = f (temperature of annealing) and C-V characteristics were determined. As a result of conducted research, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated silicon plate is technology presented below in the following steps: masking, selective activation and nickel-plating of activated plate. Such obtained metal layers have great variety in application and, in particular, can be used for the preparation of electric terminals in silicon solar cell.

Originality/value

The paper presents a new, unpublished method of manufacturing contacts in the structure of the photovoltaic cell.

Details

Microelectronics International, vol. 32 no. 1
Type: Research Article
ISSN: 1356-5362

Keywords

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