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The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties.

The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier.

The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate “microvaristor” with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation.

The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.

The purpose of this paper is to demonstrate the I‐V characteristics of ZnO film on Si substrates with Ag buffer layer by conductive atomic force (C‐AFM).

An Ag buffer layer and Zn film was first deposited on silicon substrate by RF‐sputtering deposition method from high pure Ag and Zn target, respectively. Then, the deposited film was sintered in air at 500°C for 1 h.

The structures and morphologies of the prepared films were characterized by X‐ray diffraction (XRD), energy dispersive spectrum (EDS), atomic force microscopy (AFM), and C‐AFM. The results show that the prepared ZnO films with Ag buffer layer have a good crystallinity and surface morphology. Interestingly, the I‐V curve of ZnO film exhibited typical characteristics of semi‐conductive oxide under the conductive Ag buffer layer.

The paper demonstrates, by C‐AFM, that the ZnO/Ag‐buffer/Si exhibits excellent crystal structure, morphology and typical I‐V characteristics.

The purpose of this paper is to discuss the main parameters influencing the performances of Distributed Maximum Power Point Tracking (DMPPT) and to present an algorithm aimed at the maximization of the energetic efficiency of the grid-connected PhotoVoltaic (PV) systems. Such an algorithm is based on the estimate of the optimal operating range of the input inverter voltage and of the optimal operating voltages of the PV modules.

The Fast Estimate of the Maximum Power Voltages algorithm, described in this paper, is based on the idea that the controllers of the DC/DC converters (DMPPT function) and the controller of the inverter (Central MPPT function) must be able to exchange useful data in order to carry out a suitable technique based on the jointed adoption of DMPPT and CMPPT function. Such a technique is essentially based on the knowledge, even if in approximate form, of the Power vs Voltage (P-V) characteristic of a string composed by PV modules and DC/DC converters and on the consequent fast identification of a set of operating points for the inverter and for the PV modules.

The main advantage of the proposed algorithm is represented by the fast identification of a set of operating points for the inverter and for the PV modules, which allows to obtain a marked increase of the speed of tracking both of the inverter and of the DC/DC converters performing the DMPPT function.

The simulation results, shown in this paper, confirm the validity of the proposed original approach.

Intrinsic high‐frequency oscillations (≈2.5 THz) in current and corresponding quantum well density, which have been simulated for a fixed bias voltage in the Negative Differential Resistance (NDR) region of the Current‐Voltage (I‐V) characteristics of a Resonant Tunneling Diode (RTD), suggest an equivalent nonlinear autonomous circuit model. The intrinsic circuit parameters are calculated directly from the results of the quantum transport numerical simulations. These consist of a resistor in series with a two‐branch parallel circuit, one branch consists of a capacitor and the other branch consists of an inductor in series with a nonlinear resistor. It is however suggested that much more complex external circuit‐induced behavior can occur in real RTD experiments.

The purpose of this paper is modeling the effect of negative capacitance in the capacitance-voltage characteristic of the intergranular potential barrier of varistor structure.

The modeling of the capacitance-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents, and also takes into account the voltage drop on the intergranular interlayer of intergranular potential barrier.

The models and algorithms for calculating the capacitance-voltage characteristics of a single intergranular potential barrier with the use of the most established understanding used at the interpretation of the nonlinear conductivity intergranular barrier are developed. The results of the capacitance-voltage characteristics modeling correspond to the existing understanding of the electrical properties on the ac current varistor ceramics are based on zinc oxide. The model allows to predict the behavior of varistors on the alternating current (voltage).

It is established that the recharge of the surface localized states occurs when a voltage is applied to the varistor structure, it can lead to a relaxation decrease in the width of the potential barrier overcome by tunneling electrons in the field emission from the conduction band of the one crystallite in the conduction band of the other crystallite and thus to the current backlog of applied voltage on the phase (i.e. the expression of the negative capacitance effect).

The purpose of this paper is to minimize and prevent current overloads (including the elimination of abnormal and fire hazardous situations) in photovoltaic solar arrays by using low-cost functional electronic elements, in particular, the new PolySwitch PPTC fuses.

The modeling method has been used to investigate the circuit solution of the use of PolySwitch type fuses to prevent and minimize current overloads in photovoltaic solar arrays.

It is shown that the limitation of the short-circuit current with parallel connection of photovoltaic components (photovoltaic cells or their modules) can be implemented when the following conditions are met: the resistance of the fuse in the conducting state is much lesser than the parallel connection of the series resistances of the photovoltaic components; and the tripping current of the fuse must be greater than the maximum current of the separate photovoltaic components and lesser than the current of a parallel connection of several photovoltaic components.

The influence of the magnitude of the resistance in the conducting state and the response current of the fuses to the current–voltage and volt–watt characteristics of parallel connections of the photovoltaic components (photovoltaic cells or their modules) is analyzed. The modeling results are confirmed by experimental data on the transformation research of light current–voltage and volt–watt characteristics of parallel connections of industrial photovoltaic modules using resettable fuses of the PolySwitch type.

The purpose of this paper is to present the characteristics of novel silicon Schottky barrier (SB) photodiodes (PDs) with aluminium nitride (AlN) (100 nm) nucleation layer.

Comparison was made with conventional silicon SB PDs.

It was found that smaller dark current could be achieved with AlN nucleation layer. It was also found that effective SB height increased from 0.65 to 0.71 eV with the insertion of the AlN layer. The dark leakage current for the Schottky PDs with the AlN layer was shown to be about two orders of magnitude smaller than that for the conventional silicon SB PDs.

It is possible that the detrimental effect of interface states situated near the metal semiconductor interface was less pronounced for the sample owing to the insertion of the AlN nucleation layer.

There is believed to be no other report on silicon SB PDs capped with an AlN layer in the literature. This paper describes the fabricated silicon SB PDs and reports on the electrical characteristics of the devices with an AlN nucleation layer grown at low temperature.

The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs).

To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel material. The BLGNR-TFET is designed in QuantumATK, depending on 2-D Poisson’s equation and non-equilibrium Green’s function (NEGF) formalism.

The performance of the proposed BLGNR-TFET is investigated in terms of current and voltage (I-V) characteristics and transconductance. Moreover, the proposed device performance is compared with the monolayer GNR-TFET (MLGNR-TFET). From the simulation results, it is investigated that the BLGNR-TFET shows high current and gain over the MLGNR-TFET.

This paper presents a new technique to design GNR-based TFET for future low power very large-scale integration (VLSI) devices.

The purpose of this paper is to examine the growth and characterization of the two different compound semiconductors, namely, n-zinc oxide (ZnO) and p-gallium antimonide (GaSb). In this paper, fabrication and characterization of n-ZnO/p-GaSb heterojunction diode is analyzed.

Thermo vertical direction solidification (TVDS) method was used to synthesize undoped GaSb ingot from high purity Ga (5N) and Sb (4N) host materials. Thermal evaporation technique is used to prepare a film of GaSb on glass substrate from the pre-synthesized bulk material by TVDS method. Undoped ZnO film was grown on GaSb film by sol–gel method by using chemical wet and dry (CWD) technique to fabricate n-ZnO/p-GaSb heterojunction diode.

The formation of crystalline structure and surface morphological analysis of both the GaSb bulk and film have been carried out by x-ray diffraction (XRD) analysis and scanning electron microscopy analysis. From the XRD studies, the structural characterization and phase identification of ZnO/GaSb interface. The current–voltage characteristic of the n-ZnO/p-GaSb heterostructure is found to be rectifying in nature.

GaSb film growth on any substrate by thermal evaporation method taking a small piece of the sample from the pre-synthesized GaSb bulk ingot has not been reported yet. Semiconductor device with heterojunction diode by using two different semiconductors such as ZnO/GaSb was used by this group for the first time.

Estimation of solar cell parameters, mathematical modeling and the actual performance analysis of photovoltaic (PV) cells at various ecological conditions are very important in the design and analysis of maximum power point trackers and power converters. This study aims to propose the analysis and modeling of a simplified three-diode model based on the manufacturer’s performance data.

A novel technique is presented to evaluate the PV cell constraints and simplify the existing equation using analytical and iterative methods. To examine the current equation, this study focuses on three crucial operational points: open circuit, short circuit and maximum operating points. The number of parameters needed to estimate these built-in models is decreased from nine to five by an effective iteration method, considerably reducing computational requirements.

The proposed model, in contrast to the previous complex nine-parameter three-diode model, simplifies the modeling and analysis process by requiring only five parameters. To ensure the reliability and accuracy of this proposed model, its results were carefully compared with datasheet values under standard test conditions (STC). This model was implemented using MATLAB/Simulink and validated using a polycrystalline solar cell under STC conditions.

The proposed three-diode model clearly outperforms the earlier existing two-diode model in terms of accuracy and performance, especially in lower irradiance settings, according to the results and comparison analysis.